CJ1012-G

MOSFET
CJ1012-G
N-Channel
RoHS Device
SOT-523
G : Gate
S : Source
D : Drain
Features
- High-Side Switching.
0.067(1.70)
0.059(1.50)
- Low On-Resistance.
3
- Low Threshold.
0.014(0.35)
0.010(0.25)
0.035(0.90)
0.028(0.70)
- Fast Switching Speed.
1
2
0.020(0.50)TYP.
- ESD protected up to 2KV.
0.043(1.10)
0.035(0.90)
Mechanical data
0.008(0.20)
0.004(0.10)
- Case: SOT-523, molded plastic.
0.069(1.75)
0.057(1.45)
- Terminals: Solderable per MIL-STD-750,
method 2026.
Circuit Diagram
0.018(0.46)
0.010(0.26)
0.031(0.80)
0.028(0.70)
G 1
3 D
S
0.004(0.10) max
0.010(0.25)
0.006(0.15)
2
Dimensions in inches and (millimeter)
Maximum Rating (at Ta=25°C unless otherwise noted)
Symbol
Value
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGS
±12
V
ID(DC)
500
mA
IDM(pulse)
1000
mA
Parameter
Drain current-continuous
Drain Current-pulsed (note1)
Power dissipation (note2, TA=25°C)
150
PD
Max. Power dissipation (note3, TC=25°C)
mW
275
Thermal resistance from junction to ambient
RθJA
833
°C/W
Thermal resistance from junction to case
RθJC
455
°C/W
Junction temperature
TJ
150
°C
Storage temperature
TSTG
-55 to +150
°C
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
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Comchip Technology CO., LTD.
MOSFET
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Symbol
Conditions
Min
Typ
Max
Units
On/Off States
Drain-source breakdown voltage
V(BR) DSS
VGS =0V , ID=250µA
20
VGS(th)
VDS =VGS , ID=250µA
0.45
Gate-body leakage current
IGSS
VDS =0V , VGS=±4.5V
Zero gate voltage drain current
IDSS
Gate-threshold voltage
Drain-source on-state resistance
Forward transconductance
V
1.2
V
±1
µA
VDS =16V , VGS=0V
100
nA
VGS=4.5V , ID=600mA
700
VGS=2.5V , ID=500mA
850
mΩ
RDS(on)
gFS
VDS=10V , ID=400mA
S
1
Dynamic Characteristics
Input capacitance (note 4)
ciss
Output capacitance (note 4)
Coss
Reverse transfer capacitance (note 4)
Crss
12
Total gate charge
Qg
750
Gate-source charge
Qgs
Gate-drain charge
Qgd
225
td(on)
5
100
VDS=16V , VGS=0V,
f=1MHZ
VDS=10V , VGS=4.5V,
ID=250mA
pF
16
75
nC
Switching Times (note 4)
Turn-on delay time
tr
Rise time
Turn-off delay time
td(off)
VDD=10V , ID=200mA
RL=47Ω ,
VGS=4.5V , RG=10Ω
tf
Fall time
5
nS
25
11
Drain-source diode characteristics
Drain-source diode forward voltage (note 5)
VSD
IS=0.15A , VGS=0V
1.2
V
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25°C.
3. This test is performed with infinite heat sink at Tc=25°C.
4. These parameters have no way to verify.
5. Pulse test: Pulse width≤300µs, Duty cycle≤0.5%.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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Comchip Technology CO., LTD.
MOSFET
RATING AND CHARACTERISTIC CURVES (CJ1012-G)
Fig.2 - Transfer Characteristics
Fig.1 - Output Characteristics
500
5
5.5V
Pulsed
TA=25°C
VDS=5.0V
Pulsed
4.5V
4
400
Drain Current, ID (A)
Drain Current, ID (A)
3.5V
3
2.5V
2
1
TA=100°C
300
TA=25°C
200
100
VGS=1.5V
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
Drain to Soruce Voltage, VDS (V)
1.0
1.5
2.0
2.5
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
600
500
Pulsed
TA=25°C
500
ON-Resistance, RDS(ON), ( mΩ )
ON-Resistance, RDS(ON) ( mΩ )
Pulsed
TA=25°C
400
VGS=2.5V
300
200
VGS=4.5V
100
0
100
3.0
Gate to Source Voltage, VGS (V)
400
ID=600mA
300
200
400
200
600
800
1
2
4
3
Drain Current, ID (mA)
Gate to Source Voltage, VGS (V)
Fig.5 - IS — VSD
Fig.6 - Threshold Voltage
500
5
0.85
Pulsed
TA=25°C
Threshold Voltage, VTH (V)
Source Current, IS (mA)
100
10
1
0.80
0.75
ID=250μA
0.70
0.65
0.1
0.4
0.60
0.6
0.8
1.0
1.2
25
Source to Drain Voltage, VSD(V)
50
75
100
125
Junction Temperature, TJ (°C)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
P1
d
T
F
E
P0
B
W
C
A
P
12
o
0
D2
D1
D
W1
SOT-523
SOT-523
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.85 ± 0.05
1.85 ± 0.05
0.875 ± 0.05
1.50 ± 0.10
178 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.073 ± 0.002
0.073 ± 0.002
0.034 ± 0.002
0.059 ± 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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Comchip Technology CO., LTD.
MOSFET
Marking Code
3
Part Number
Marking Code
CJ1012-G
C
C
1
2
Suggested PAD Layout
SOT-523
SIZE
B
(mm)
(inch)
A
0.60
0.024
B
0.50
0.020
C
0.40
0.016
D
1.00
0.039
E
1.24
0.049
F
1.84
0.072
A
C
E
F
D
Standard Packaging
REEL PACK
Case Type
SOT-523
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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QW-BTR44
Comchip Technology CO., LTD.