SOT-523 Plastic-Encapsulate MOSFETS CJ1012

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
CJ1012 N-Channel Power MOSFET
SOT-523
General Description
This Single N-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON).
1. GATE
2. SOURCE
FEATURE
 High-Side Switching
 Low On-Resistance
 Low Threshold
 Fast Switching Speed
 ESD protected up to 2KV
3. DRAIN
APPLICATIONS
 Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
 Battery Operated Systems
 Power Supply Converter Circuits
 Load/Power Switching Cell Phones, Pagers
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source voltage
VDSS
20
Gate-Source Voltage
VGS
±12
Drain Current-Continuous
ID(DC)
500
IDM(pulse)
1000
Units
V
mA
Drain Current -Pulsed(note1)
150
Power Dissipation (note 2 , Ta=25℃)
mW
PD
275
Maximum Power Dissipation (note 3 , Tc=25℃)
Thermal Resistance from Junction to Ambient
RθJA
833
Thermal Resistance from Junction to Case
RθJC
455
Storage Temperature
Tj
150
Junction Temperature
Tstg
-55 ~+150
℃/W
℃
A-2,May,2012
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
On/Off States
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID =250µA
20
VGS(th)
VDS =VGS, ID =250µA
0.45
Gate-Body Leakage Current
IGSS
VDS =0V, VGS =±4.5V
±1
µA
Zero Gate Voltage Drain Current
IDSS
VDS =16V, VGS =0V
100
nA
VGS =4.5V, ID =600mA
700
VGS =2.5V, ID =500mA
850
Gate-Threshold Voltage
Drain-Source On-State Resistance
RDS(on)
Forward Transconductance
gFS
VDS =10V, ID =400mA
1.2
1
V
mΩ
S
Dynamic Characteristics
Input Capacitance (note 4)
Ciss
Output Capacitance (note 4)
Coss
Reverse Transfer Capacitance (note 4)
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
100
VDS =16V,VGS =0V,f =1MHz
pF
16
12
VDS =10V,VGS =4.5V,
ID =250mA
750
nC
75
225
Switching Times (note 4)
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
VDD=10V,
RL=47Ω, ID=200mA,
VGS=4.5V,RG=10Ω
5
5
nS
25
11
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage (note 5)
VSD
IS=0.15A, VGS = 0V
1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25℃.
3. This test is performed with infinite heat sink at Tc=25℃.
4.These parameters have no way to verify.
5. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
A-2,May,2012
Typical Characteristics
CJ1012
Output Characteristics
5
Transfer Characteristics
500
Ta=25℃
5.5V
VDS=16V
Pulsed
Pulsed
4.5V
4
400
(mA)
ID
3
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
3.5V
2.5V
2
1
300
Ta=100℃
200
Ta=25℃
100
VGS=1.5V
0
0.0
0.5
1.0
1.5
2.0
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
600
2.5
VDS
0
0.0
3.0
(V)
0.5
1.0
1.5
2.0
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
500
——
2.5
VGS
3.0
(V)
VGS
Ta=25℃
Ta=25℃
Pulsed
Pulsed
300
RDS(ON)
RDS(ON)
400
ON-RESISTANCE
(mΩ)
(mΩ)
500
ON-RESISTANCE
VGS=2.5V
VGS=4.5V
200
400
ID=600mA
300
100
0
100
200
200
400
600
DRAIN CURRENT
500
ID
1
800
2
3
4
GATE TO SOURCE VOLTAGE
(mA)
IS —— VSD
VGS
5
(V)
Threshold Voltage
0.85
Ta=25℃
Pulsed
0.80
VTH
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (mA)
(V)
100
10
1
0.1
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
1.0
VSD (V)
1.2
0.75
ID=250uA
0.70
0.65
0.60
25
50
75
JUNCTION TEMPERATURE
100
TJ
125
(℃ )
A-2,May,2012