Comchip MOSFET SMD Diode Specialist CJ3400-HF (N-Channel ) Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) - N-Channel Enhancement mode field effect transistor. - High dense cell design for extermely low RDS(ON) 3 0.055(1.40) 0.047(1.20) - Exceptional on-resistance and maximum DC current capability. 1 2 0.079(2.00) 0.071(1.80) Mechanical data - Case: SOT-23, molded plastic. 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.035(0.90) - Terminals: solderable per MIL-STD-750, method 2026. 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) Circuit diagram D Dimensions in inches and (millimeter) G S Maximum Ratings ( Ta=25 °C unless otherwise noted ) Symbol Value Units Drain-source voltage VDS 30 V Gate-source voltage VGS ±12 V ID 5.8 A Drain current-pulsed (note 1) IDM 30 A Power dissipation PD 350 mW RΘJA 357 °C/W Junction temperature TJ 150 °C Storage temperature TSTG -55 to +150 °C Parameter Continuous drain current Thermal resistance from Junction to ambient (note 2) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-JTR10 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Electrical Characteristics Parameter ( Ta=25 °C unless otherwise noted ) Conditions Symbol Min. 30 Typ. Max. Unit V V Off Characteristics Drain-Source breakdown voltage VGS=0V, ID=250μA V(BR)DSS Zero gate voltage drain current VDS=24V, VGS=0V IDSS 1 μA Gate-Source leakage current VGS=±12V , VDS=0V IGSS ±100 nA On Characteristics VGS=10V, ID=5.8A Static drain-source on-resistance (note 3) VGS=4.5V, ID=5A 35 RDS(ON) 40 VGS=2.5V, ID=4A Forward transconductance VDS=5V, ID=5A Gate threshold voltage VDS=VGS, ID=250μA mΩ 52 gFS 8 VGS(th) 0.7 S 1.4 V Dynamic Characteristics (note 3,4) Input capacitance Output capacitance Reverse transfer capacitance Gate resistance 1050 Ciss VDS=15V, VGS=0V, f=1MHz VDS=0V, VGS=0V, f=1MHz Coss 99 Crss 77 pF Rg 3.6 td(on) 5 tr 7 td(off) 40 tf 6 VSD 1 Ω Switching Characteristics (note 3,4) Turn-on delay time Turn-on rise time Turn-off delay time VGS=10V, VDS=15V, RL=2.7Ω, RGEN=3Ω Turn-off Fall time ns Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) IS=1A, VGS=0V V Note: 1. 2. 3. 4. Repetitive Rating : Pulse width limited by maximum junction temperature. Surface mounted on FR4 Board, t < 5sec. Pulse test; Pulse width ≤300µs, Duty cycle ≤ 2%. Guaranteed by design, not subject to production testing. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-JTR10 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist RATING AND CHARACTERISTIC CURVES (CJ3400-HF) Fig.2- Transfer Characteristics Fig.1- Output Characteristics 24 5 Ta=25°C Pulsed VGS=7V-3V Ta=25°C Pulsed 20 4 Drain Current, ID (A) Dran Current,ID (A) VGS=2.5V 18 12 VGS=2V 8 3 2 1 4 VGS=1.5V 0 0 2 6 4 8 0 10 0 Drain To Soruce Voltage, VDS (A) 0.5 1.0 1.5 2.0 Fig.4- RDS(ON) — VGS Fig.3 - RDS(ON) — ID 200 500 Ta=25°C Pulsed ON-Resistance, RDS(ON) ( mΩ ) Ta=25°C Pulsed ON-Resistance, RDS(ON) ( mΩ ) 2.5 Gate To Source Voltage,VGS (V) 150 100 VGS=2.5V 50 VGS=4.5V 400 300 200 ID=5A 100 VGS=10V 0 0 0 5 10 15 20 25 0 Drain Current,ID (A) 2 4 6 8 10 Gate to Source Voltage,VGS (V) Fig.5 - IS — VSD Source Current, Is ( A ) 10 1 0.1 0.01 1E-3 0.0 0.3 0.6 0.9 1.2 Source To Drain Voltage,VSD (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-JTR10 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Marking Code 3 Part Number Marking Code CJ3400-HF R0 XX 1 2 xx = Product type marking code Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 A C D B Standard Packaging Case Type SOT-23 Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 4 QW-JTR10 Comchip Technology CO., LTD.