QW-JTR10 CJ3400-HF RevA

Comchip
MOSFET
SMD Diode Specialist
CJ3400-HF (N-Channel )
Reverse Voltage: 30 Volts
Forward Current: 5.8 A
RoHS Device
Halogen Free
SOT-23
Features
0.118(3.00)
0.110(2.80)
- N-Channel Enhancement mode field effect transistor.
- High dense cell design for extermely low RDS(ON)
3
0.055(1.40)
0.047(1.20)
- Exceptional on-resistance and maximum
DC current capability.
1
2
0.079(2.00)
0.071(1.80)
Mechanical data
- Case: SOT-23, molded plastic.
0.006(0.15)
0.003(0.08)
0.041(1.05)
0.035(0.90)
- Terminals: solderable per MIL-STD-750,
method 2026.
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
Circuit diagram
D
Dimensions in inches and (millimeter)
G
S
Maximum Ratings ( Ta=25 °C unless otherwise noted )
Symbol
Value
Units
Drain-source voltage
VDS
30
V
Gate-source voltage
VGS
±12
V
ID
5.8
A
Drain current-pulsed (note 1)
IDM
30
A
Power dissipation
PD
350
mW
RΘJA
357
°C/W
Junction temperature
TJ
150
°C
Storage temperature
TSTG
-55 to +150
°C
Parameter
Continuous drain current
Thermal resistance from Junction to ambient (note 2)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-JTR10
Comchip Technology CO., LTD.
Comchip
MOSFET
SMD Diode Specialist
Electrical Characteristics
Parameter
( Ta=25 °C unless otherwise noted )
Conditions
Symbol
Min.
30
Typ.
Max.
Unit
V
V
Off Characteristics
Drain-Source breakdown voltage
VGS=0V, ID=250μA
V(BR)DSS
Zero gate voltage drain current
VDS=24V, VGS=0V
IDSS
1
μA
Gate-Source leakage current
VGS=±12V , VDS=0V
IGSS
±100
nA
On Characteristics
VGS=10V, ID=5.8A
Static drain-source on-resistance
(note 3)
VGS=4.5V, ID=5A
35
RDS(ON)
40
VGS=2.5V, ID=4A
Forward transconductance
VDS=5V, ID=5A
Gate threshold voltage
VDS=VGS, ID=250μA
mΩ
52
gFS
8
VGS(th)
0.7
S
1.4
V
Dynamic Characteristics (note 3,4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
1050
Ciss
VDS=15V, VGS=0V, f=1MHz
VDS=0V, VGS=0V, f=1MHz
Coss
99
Crss
77
pF
Rg
3.6
td(on)
5
tr
7
td(off)
40
tf
6
VSD
1
Ω
Switching Characteristics (note 3,4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
VGS=10V, VDS=15V,
RL=2.7Ω, RGEN=3Ω
Turn-off Fall time
ns
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 3)
IS=1A, VGS=0V
V
Note:
1.
2.
3.
4.
Repetitive Rating : Pulse width limited by maximum junction temperature.
Surface mounted on FR4 Board, t < 5sec.
Pulse test; Pulse width ≤300µs, Duty cycle ≤ 2%.
Guaranteed by design, not subject to production testing.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
QW-JTR10
Comchip Technology CO., LTD.
Comchip
MOSFET
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (CJ3400-HF)
Fig.2- Transfer Characteristics
Fig.1- Output Characteristics
24
5
Ta=25°C
Pulsed
VGS=7V-3V
Ta=25°C
Pulsed
20
4
Drain Current, ID (A)
Dran Current,ID (A)
VGS=2.5V
18
12
VGS=2V
8
3
2
1
4
VGS=1.5V
0
0
2
6
4
8
0
10
0
Drain To Soruce Voltage, VDS (A)
0.5
1.0
1.5
2.0
Fig.4- RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
200
500
Ta=25°C
Pulsed
ON-Resistance, RDS(ON) ( mΩ )
Ta=25°C
Pulsed
ON-Resistance, RDS(ON) ( mΩ )
2.5
Gate To Source Voltage,VGS (V)
150
100
VGS=2.5V
50
VGS=4.5V
400
300
200
ID=5A
100
VGS=10V
0
0
0
5
10
15
20
25
0
Drain Current,ID (A)
2
4
6
8
10
Gate to Source Voltage,VGS (V)
Fig.5 - IS — VSD
Source Current, Is ( A )
10
1
0.1
0.01
1E-3
0.0
0.3
0.6
0.9
1.2
Source To Drain Voltage,VSD (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 3
QW-JTR10
Comchip Technology CO., LTD.
Comchip
MOSFET
SMD Diode Specialist
Marking Code
3
Part Number
Marking Code
CJ3400-HF
R0
XX
1
2
xx = Product type marking code
Suggested PAD Layout
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
1.90
0.075
C
2.02
0.080
D
2.82
0.111
A
C
D
B
Standard Packaging
Case Type
SOT-23
Qty Per Reel
Reel Size
(Pcs)
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 4
QW-JTR10
Comchip Technology CO., LTD.