MOSFET CJ1012-G N-Channel RoHS Device SOT-523 G : Gate S : Source D : Drain Features - High-Side Switching. 0.067(1.70) 0.059(1.50) - Low On-Resistance. 3 - Low Threshold. 0.014(0.35) 0.010(0.25) 0.035(0.90) 0.028(0.70) - Fast Switching Speed. 1 2 0.020(0.50)TYP. - ESD protected up to 2KV. 0.043(1.10) 0.035(0.90) Mechanical data 0.008(0.20) 0.004(0.10) - Case: SOT-323, molded plastic. 0.069(1.75) 0.057(1.45) - Terminals: Solderable per MIL-STD-750, method 2026. Circuit Diagram 0.018(0.46) 0.010(0.26) 0.031(0.80) 0.028(0.70) G 1 3 D S 0.004(0.10) max 0.010(0.25) 0.006(0.15) 2 Dimensions in inches and (millimeter) Maximum Rating (at Ta=25°C unless otherwise noted) Symbol Value Unit Drain-source voltage VDSS 20 V Gate-source voltage VGS ±12 V ID(DC) 500 mA IDM(pulse) 1000 mA Parameter Drain current-continuous Drain Current-pulsed (note1) Power dissipation (note2, TA=25°C) 150 PD Max. Power dissipation (note3, TC=25°C) mW 275 Thermal resistance from junction to ambient RθJA 833 °C/W Thermal resistance from junction to case RθJC 455 °C/W Junction temperature TJ 150 °C Storage temperature TSTG -55 to +150 °C Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-BTR44 Comchip Technology CO., LTD. MOSFET Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions Min Typ Max Units On/Off States Drain-source breakdown voltage V(BR) DSS VGS =0V , ID=250µA 20 VGS(th) VDS =VGS , ID=250µA 0.45 Gate-body leakage current IGSS VDS =0V , VGS=±4.5V Zero gate voltage drain current IDSS Gate-threshold voltage Drain-source on-state resistance Forward transconductance V 1.2 V ±1 µA VDS =16V , VGS=0V 100 nA VGS=4.5V , ID=600mA 700 VGS=2.5V , ID=500mA 850 mΩ RDS(on) gFS VDS=10V , ID=400mA S 1 Dynamic Characteristics Input capacitance (note 4) ciss Output capacitance (note 4) Coss Reverse transfer capacitance (note 4) Crss 12 Total gate charge Qg 750 Gate-source charge Qgs Gate-drain charge Qgd 225 td(on) 5 100 VDS=16V , VGS=0V, f=1MHZ VDS=10V , VGS=4.5V, ID=250mA pF 16 75 nC Switching Times (note 4) Turn-on delay time tr Rise time Turn-off delay time td(off) VDD=10V , ID=200mA RL=47Ω , VGS=4.5V , RG=10Ω tf Fall time 5 nS 25 11 Drain-source diode characteristics Drain-source diode forward voltage (note 5) VSD IS=0.15A , VGS=0V 1.2 V Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at Ta=25°C. 3. This test is performed with infinite heat sink at Tc=25°C. 4. These parameters have no way to verify. 5. Pulse test: Pulse width≤300µs, Duty cycle≤0.5%. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-BTR44 Comchip Technology CO., LTD. MOSFET RATING AND CHARACTERISTIC CURVES (CJ1012-G) Fig.2 - Transfer Characteristics Fig.1 - Output Characteristics 500 5 5.5V Pulsed TA=25°C VDS=5.0V Pulsed 4.5V 4 400 Drain Current, ID (A) Drain Current, ID (A) 3.5V 3 2.5V 2 1 TA=100°C 300 TA=25°C 200 100 VGS=1.5V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 Drain to Soruce Voltage, VDS (V) 1.0 1.5 2.0 2.5 Fig.4 - RDS(ON) — VGS Fig.3 - RDS(ON) — ID 600 500 Pulsed TA=25°C 500 ON-Resistance, RDS(ON), ( mΩ ) ON-Resistance, RDS(ON) ( mΩ ) Pulsed TA=25°C 400 VGS=2.5V 300 200 VGS=4.5V 100 0 100 3.0 Gate to Source Voltage, VGS (V) 400 ID=600mA 300 200 400 200 600 800 1 2 4 3 Drain Current, ID (mA) Gate to Source Voltage, VGS (V) Fig.5 - IS — VSD Fig.6 - Threshold Voltage 500 5 0.85 Pulsed TA=25°C Threshold Voltage, VTH (V) Source Current, IS (mA) 100 10 1 0.80 0.75 ID=250μA 0.70 0.65 0.1 0.4 0.60 0.6 0.8 1.0 1.2 25 Source to Drain Voltage, VSD(V) 50 75 100 125 Junction Temperature, TJ (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-BTR44 Comchip Technology CO., LTD. MOSFET Reel Taping Specification P1 d T F E P0 B W C A P 12 o 0 D2 D1 D W1 SOT-523 SOT-523 SYMBOL A B C d D D1 D2 (mm) 1.85 ± 0.05 1.85 ± 0.05 0.875 ± 0.05 1.50 ± 0.10 178 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.073 ± 0.002 0.073 ± 0.002 0.034 ± 0.002 0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 4 QW-BTR44 Comchip Technology CO., LTD. MOSFET Marking Code 3 Part Number Marking Code CJ1012-G C C 1 2 Suggested PAD Layout SOT-523 SIZE B (mm) (inch) A 0.60 0.024 B 0.50 0.020 C 0.40 0.016 D 1.00 0.039 E 1.24 0.049 F 1.84 0.072 A C E F D Standard Packaging REEL PACK Case Type SOT-523 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 5 QW-BTR44 Comchip Technology CO., LTD.