Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 ■ Features 4.0 0.8 1.0 1.0 ● 0.2 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). ● (1.45) 0.5 4.5±0.1 0.15 6.9±0.1 0.7 14.5±0.5 0.65 max. Symbol Ratings +0.1 0.45–0.05 2.5±0.5 Unit *1 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Peak collector current ICP 1.5 A Collector current IC 0.7 A Collector power dissipation PC*1 1.0 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 2.5±0.5 2 3 2.5±0.1 1 +0.1 Parameter (Ta=25˚C) 0.45–0.05 ■ Absolute Maximum Ratings Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. or more, and the board 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Collector cutoff current Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 1 µA 10 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V VCE = 10V, IC = 150mA 400 *1 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA 0.15 Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 *1h FE 2000 0.4 V MHz 15 pF Rank classification Rank R hFE 400 ~ 800 S T 600 ~ 1200 1000 ~ 2000 1 2SC5335 Transistor IC — VCE 1.2 0.8 0.4 100 90µA 80µA 80 70µA 60µA 60 50µA 40 40µA 30µA 20 20µA 10µA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 8 10 IC/IB=10 30 Ta=–25˚C 75˚C 0.3 0.1 0.03 0.01 3 10 30 100 0.3 0.1 Ta=75˚C 25˚C 0.03 0.01 –25˚C 0.003 0.001 3 10 300 Collector current IC (mA) 1000 30 100 300 1000 Collector current IC (mA) Cob — VCB 24 VCE=10V Ta=75˚C 25˚C 900 –25˚C 600 300 0 1 1 1 1800 1200 3 25˚C 3 12 1500 10 1 IC/IB=10 hFE — IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 6 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 4 Collector output capacitance Cob (pF) 1.6 Ta=25˚C IB=100µA Collector current IC (mA) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 120 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 2.0 f=1MHz IE=0 Ta=25˚C 20 16 12 8 4 0 1 3 10 30 100 300 Collector current IC (mA) 1000 1 3 10 30 100 Collector to base voltage VCB (V)