Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 1.05 2.5±0.1 ±0.05 ■ Features 0.8 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 ● (1.45) 1.0 1.0 ● 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 14.5±0.5 0.65 max. Symbol Ratings +0.1 0.45–0.05 2.5±0.5 Unit * Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 1.5 A Collector current IC 0.8 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 2.5±0.5 2 3 2.5±0.1 1 +0.1 Parameter (Ta=25˚C) 0.45–0.05 ■ Absolute Maximum Ratings Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. or more, and the board 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 7V, IC = 0 hFE1 VCE = 5V, IC = 10mA 50 hFE2 VCE = 5V, IC = 300mA*1 10 VCE(sat) IC = 100mA, IB = 10mA*1 0.1 0.5 Base to emitter saturation voltage VBE(sat) IC = 100mA, IB = 10mA*1 0.8 1.0 Transition frequency fT VCB = 10V, IE = –50mA, f = 10MHz Turn-on time ton Storage time tstg Fill time tf Forward current transfer ratio Collector to emitter saturation voltage VCB = 500V, IE = 0 max Collector cutoff current IC = 200mA, IB1 = 40mA IB2 = –40mA, VCC = 150V 300 V V 20 MHz 0.7 µs 4.0 µs µs 0.4 *1 Pulse measurement 1 Transistor 2SC5018 PC — Ta IC — VCE 1.0 0.8 0.6 0.4 Ta=25˚C IB=1.0mA 100 0.2 0.9mA 0.8mA 0.7mA 80 0.6mA 60 0.5mA 0.4mA 40 0.3mA 0.2mA 20 0.1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 100 10 3 25˚C 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 6 8 10 12 200 VCE=5V Forward current transfer ratio hFE 30 1 4 hFE — IC IC/IB=10 Ta=–25˚C 2 Collector to emitter voltage VCE (V) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 3 Collector current IC (A) 2 VCE(sat) — IC 120 Collector current IC (mA) Collector power dissipation PC (W) 1.2 10 160 Ta=75˚C 120 25˚C –25˚C 80 40 0 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1 100 IC/IB=10 30 10 3 Ta=75˚C 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10