PANASONIC 2SC5018

Transistor
2SC5018
Silicon NPN triple diffusion planer type
For high breakdown voltage high-speed switching
Unit: mm
1.05 2.5±0.1
±0.05
■ Features
0.8
High collector to base voltage VCBO.
High emitter to base voltage VEBO.
0.2
●
(1.45)
1.0 1.0
●
4.0
0.5
4.5±0.1
0.15
6.9±0.1
0.7
14.5±0.5
0.65 max.
Symbol
Ratings
+0.1
0.45–0.05
2.5±0.5
Unit
*
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
1.5
A
Collector current
IC
0.8
A
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
2.5±0.5
2
3
2.5±0.1
1
+0.1
Parameter
(Ta=25˚C)
0.45–0.05
■ Absolute Maximum Ratings
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
or more, and the board
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45+–0.1
0.05
(HW type)
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
Unit
100
µA
100
µA
ICBO
Emitter cutoff current
IEBO
VEB = 7V, IC = 0
hFE1
VCE = 5V, IC = 10mA
50
hFE2
VCE = 5V, IC = 300mA*1
10
VCE(sat)
IC = 100mA, IB = 10mA*1
0.1
0.5
Base to emitter saturation voltage
VBE(sat)
IC = 100mA, IB =
10mA*1
0.8
1.0
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 10MHz
Turn-on time
ton
Storage time
tstg
Fill time
tf
Forward current transfer ratio
Collector to emitter saturation voltage
VCB = 500V, IE = 0
max
Collector cutoff current
IC = 200mA, IB1 = 40mA
IB2 = –40mA, VCC = 150V
300
V
V
20
MHz
0.7
µs
4.0
µs
µs
0.4
*1
Pulse measurement
1
Transistor
2SC5018
PC — Ta
IC — VCE
1.0
0.8
0.6
0.4
Ta=25˚C
IB=1.0mA
100
0.2
0.9mA
0.8mA
0.7mA
80
0.6mA
60
0.5mA
0.4mA
40
0.3mA
0.2mA
20
0.1mA
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
100
10
3
25˚C
75˚C
0.3
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1
6
8
10
12
200
VCE=5V
Forward current transfer ratio hFE
30
1
4
hFE — IC
IC/IB=10
Ta=–25˚C
2
Collector to emitter voltage VCE (V)
VBE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
0
3
Collector current IC (A)
2
VCE(sat) — IC
120
Collector current IC (mA)
Collector power dissipation PC (W)
1.2
10
160
Ta=75˚C
120
25˚C
–25˚C
80
40
0
0.001 0.003 0.01 0.03
0.1
0.3
Collector current IC (A)
1
100
IC/IB=10
30
10
3
Ta=75˚C
1
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
10