Transistor 2SD2598 Silicon NPN epitaxial planer type darlington Unit: mm 1.05 2.5±0.1 ±0.05 4.0 0.8 ■ Absolute Maximum Ratings * Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 750 mA Collector current IC Collector power dissipation PC*1 Junction temperature Tj Storage temperature Tstg 500 mA 1 W 150 ˚C –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter 14.5±0.5 2.5±0.5 1 2.5±0.5 2 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (Ta=25˚C) Parameter +0.1 0.45–0.05 2.5±0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. +0.1 ● 0.65 max. 0.45–0.05 ● 1.0 1.0 0.2 For low-frequency amplification ■ Features 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) Internal Connection C or more, and the board B E (Ta=25˚C) Symbol (1.45) 0.5 4.5±0.1 0.15 6.9±0.1 0.7 max Unit Collector cutoff current ICBO VCB = 25V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 4V, IC = 0 100 nA Collector to base voltage VCBO IC = 100µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 100µA, IC = 0 5 V *1 Conditions typ Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 0.5mA*2 2.5 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 0.5mA*2 3.0 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz *1h VCE = 10V, IC = 500mA*2 min 4000 20000 200 MHz *2 FE Rank classification Rank hFE Q Pulse measurement R 4000 ~ 10000 8000 ~ 20000 1 2SD2598 Transistor IC — VCE 1.2 0.8 0.4 Ta=25˚C IB=150µA 125µA 100µA 750 Collector current IC (mA) 600 50µA 450 300 150 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 30 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 8 10 12 IC/IB=1000 30 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 3 Collector current IC (A) 10 9.0 Ta=75˚C 25˚C –25˚C 103 102 10 1 0.01 0.03 1 3 10 Cob — VCB VCE=10V 104 0.3 Collector current IC (mA) hFE — IC IC/IB=1000 1 6 105 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 100 4 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 2 75µA Collector output capacitance Cob (pF) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.6 3 VCE(sat) — IC 900 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 2.0 f=1MHz IE=0 Ta=25˚C 7.5 6.0 4.5 3..0 1.5 0 0.1 0.3 1 3 Collector current IC (A) 10 1 3 10 30 100 Collector to base voltage VCB (V)