Si1026X New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA) 60 1.40 @ VGS = 10 V 1 to 2.5 500 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 1.40 W Low Threshold: 2 V (typ) Low Input Capacitance: 30 pF Fast Switching Speed: 15 ns (typ) Low Input and Output Leakage Miniature Package Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Small Board Area SC-89 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code: E Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 85_C Pulsed Drain Currentb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) ID IS TA = 25_C TA = 85_C PD V 305 230 IDM Continuous Source Current (diode conduction)a Maximum Power Dissipationa 320 TA = 25_C Unit 220 mA –650 450 380 280 250 145 130 mW TJ, Tstg –55 to 150 _C ESD 2000 V Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71434 S-03518—Rev. A, 23-Apr-01 www.vishay.com 1 Si1026X New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = 10 mA 60 VGS(th) VDS = VGS, ID = 0.25 mA 1 Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea rDS(on) 2.5 VDS = 0 V, VGS = "10 V "150 VDS = 0 V, VGS = "5 " V " "50 VDS = 50 V, VGS = 0 V 10 VDS = 10 V, VGS = 4.5 V 500 VDS = 7.5 V, VGS = 10 V 800 mA VGS = 4.5 V, ID = 200 mA 3.0 VGS = 10 V, ID = 500 mA 1.40 Diode Forward Voltagea gfs VDS = 10 V, ID = 200 mA VSD VGS = 0 V, IS = 200 mA nA 100 TJ = 85_C W 2.50 TJ = 125_C Forward Transconductancea V 200 mS 1.40 V Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 600 VDS =10 V, ID = 250 mA VGS = 4.5 V 120 pC 225 30 VDS = 25 V, VGS = 0 V f = 1 MHz 6 pF 3 Switchingb, c Turn-On Time t(on) Turn-Off Time t(off) VDD = 30 V, RL = 150 W ID = 200 mA, VGEN = 10 V RG = 10 W 15 ns 20 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 71434 S-03518—Rev. A, 23-Apr-01 Si1026X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1200 1.0 6V TJ = –55_C VGS = 10 thru 7 V I D – Drain Current (A) 0.8 I D – Drain Current (mA) 5V 0.6 4V 0.4 900 25_C 125_C 600 300 0.2 3V 0.0 0 0 1 2 3 4 5 0 1 On-Resistance vs. Drain Current 4 5 6 VGS = 0 V f = 1 MHz 3.5 40 3.0 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 3 Capacitance 50 4.0 2.5 VGS = 4.5 V 2.0 1.5 VGS = 10 V 1.0 30 Ciss 20 Coss 10 Crss 0.5 0 0.0 0 200 400 600 800 0 1000 5 ID – Drain Current (mA) Gate Charge 15 20 25 On-Resistance vs. Junction Temperature 2.0 VDS = 10 V ID = 250 mA VGS = 10 V @ 500 mA r DS(on) – On-Resistance ( W ) (Normalized) 6 10 VDS – Drain-to-Source Voltage (V) 7 V GS – Gate-to-Source Voltage (V) 2 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) 5 4 3 2 1.6 1.2 VGS = 4.5 V @ 200 mA 0.8 0.4 1 0 0.0 0.1 0.2 0.3 0.4 Qg – Total Gate Charge (nC) Document Number: 71434 S-03518—Rev. A, 23-Apr-01 0.5 0.6 0.0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si1026X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 5 1000 VGS = 0 V r DS(on) – On-Resistance ( W ) I S – Source Current (A) 4 100 TJ = 125_C 10 TJ = 25_C TJ = –55_C 3 2 ID = 500 mA ID = 200 mA 1 0 1 0.00 0.3 0.6 0.9 1.2 0 1.5 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Variance Over Temperature 0.4 V GS(th) Variance (V) 0.2 ID = 250 mA –0.0 –0.2 –0.4 –0.6 –0.8 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 500_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71434 S-03518—Rev. A, 23-Apr-01