ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V(BR)DSV Min (V) ND2406L rDS(on) Max () VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 ND2410L BSS129 230 Features Benefits Applications High Breakdown Voltage: 260 V Normally “On” Low rDS Switch: 3.5 Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching TO-226AA (TO-92) Normally “On” Switching Circuits Current Sources/Limiters Power Supply, Converter Circuits Solid-State Relays Telecom Switches TO-92-18CD (TO-18 Lead Form) S 1 S 1 G 2 D 2 D 3 G 3 Top View Top View ND2406L ND2410L BSS129 Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol ND2406L ND2410L BSS129 Drain-Source Voltage VDS 240 240 230 Gate-Source Voltage VGS 30 30 20 0.23 0.18 0.15 0.14 0.12 0.9 0.9 0.6 0.8 0.8 1.0 0.32 0.32 0.4 156 125 Continuous Drain Current (TJ = 150C) Pulsed Drain = = Currenta Power Dissipation ID IDM = = Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range PD RthJA TJ, Tstg 156 –55 to 150 Unit V A W C/W C Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198. Applications information may also be obtained via FaxBack, request document #70612. Siliconix S-52426—Rev. C, 14-Apr-97 1 ND2406L/2410L, BSS129 Specificationsa Limits ND2406L Parameter Symbol Test Conditions Typb Min Max ND2410L Min Max BSS129 Min Max Unit Static Drain-Source D i S Breakdown Voltage g V(BR)DSV VGS = –9 V, ID = 10 mA 260 VGS = –5 V, ID = 10 mA 260 VGS = –3 V, ID = 250 mA 260 VDS = 5 V, ID = 10 mA Gate Source Cutoff Voltage Gate-Source Gate Body Leakage Gate-Body VGS(off) GS( ff) IGSS 240 240 230 –1.5 VDS = 0 V, VGS = "20 V TJ = 125C "10 "10 "50 "50 "100 200 VDS = 180 V, VGS = –5 V 1 TJ = 125C mA 200 0.1 TJ = 125C Drain Source On-Resistance Drain-Source On Resistancec IDSS rDS(on) DS( ) Forward Transconductance c gfs f Common Source Output Conductancec gos 200 VDS = 10 V, VGS = 0 V 350 VGS = 2 V, ID = 30 mA 3.3 VGS = 0 V, ID = 30 mA 4.5 6 10 7.2 15 25 TJ = 125C VGS = 0 V, ID = 14 mA 4 VDS = 25 V, ID = 250 mA 375 40 40 mA W 20 140 mS 110 VDS = 10 V, ID = 30 A nA 1 VDS = 230 V, VGS = –3 V Drain-Saturation Currentc V –2.5 –0.7 TJ = 125C ID(off) D( ff) –0.5 VDS = 3 V, ID = 1 mA VDS = 180 V, VGS = –9 V Drain Cutoff Current –4.5 mS 70 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25 V, V VGS = –55 V f = 1 MHz 70 120 120 20 30 30 10 15 15 pF Switchingd Turn On Time Turn-On Turn-Off Time td(on) tr td(off) 15 VDD = 25 V, RL = 830 W ID ^ 30 mA, mA VGEN = -5 V RG = 25 W tf Notes a. TA = 25C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. 2 75 ns 40 100 VDDV24 Siliconix S-52426—Rev. C, 14-Apr-97 ND2406L/2410L, BSS129 Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics (ND2406) 200 –0.8 V VGS = 2 V 160 0V –1 V –0.4 V 160 –0.6 V 120 –1.2 V –1.4 V 80 0.2 V VGS = 2 V I D – Drain Current (mA) I D – Drain Current (mA) Output Characteristics (ND2410) 200 –1.6 V 40 0.4 V –0.2 V 120 –0.4 V 80 –0.6 V 40 –0.8 V –1 V –1.8 V –2 V 0 0 0 0.4 0.8 1.2 1.6 2 0 VDS – Drain-to-Source Voltage (V) 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) Transfer Characteristics (ND2406) 500 0.4 Transfer Characteristics (ND2410) 500 TC = –55C VDS = 10 V VDS = 10 V 125C 400 25C I D – Drain Current (mA) I D – Drain Current (mA) 400 300 200 100 300 200 –55C 25C 100 TC = 125C 0 –4.5 –3.5 –2.5 –1.5 –0.5 0 –4.5 0.5 VGS – Gate-Source Voltage (V) 1000 –1.5 –0.5 0.5 On-Resistance vs. DrainCurrent 25 VGS = 0 V IDSS 600 6 400 4 200 2 I DSS – Drain Current (mA) 800 8 rDS(on) – On-Resistance ( ) rDS(on) rDS(on) – On-Resistance ( ) –2.5 VGS – Gate-Source Voltage (V) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 10 –3.5 20 15 ND2410 10 ND2406 5 rDS @ ID = 30 mA, VGS = 0 V IDSS @ VDS = 7.5 V, VGS = 0 V 0 0 –1 –2 –3 –4 –5 VGS(off) – Gate-Source Cutoff Voltage (V) Siliconix S-52426—Rev. C, 14-Apr-97 –6 0 10 100 1K ID – Drain Current (mA) 3 ND2406L/2410L, BSS129 Typical Characteristics (25C Unless Otherwise Noted) (Cont’d) Normalized On-Resistance vs. Junction Temperature 350 2.00 Forward Transconductance vs. Drain Current 25C VGS = 0 V I D = 30 mA g fs – Forward Transconductance (mS) rDS(on) – Drain-Source On-Resistance (Normalized) 2.25 1.75 1.50 1.25 1.00 0.75 300 150C 250 –55C 200 150 100 VDS = 10 V Pulse Test 80 ms, 1% Duty Cycle 50 0 0.50 –50 –10 30 70 150 110 1 10 TJ – Junction Temperature (C) Capacitance Load Condition Effects on Switching 300 t – Switching Time (ns) 160 120 C iss 80 40 VDD = 25 V VGS = 0 to –5 V RG = 25W tf VGS = –5 V f = 1 MHz 200 1K ID – Drain Current (mA) 240 C – Capacitance (pF) 100 t d(off) 100 tr td(on) 10 C oss C rss 0 3 0 10 20 30 40 50 10 1 100 ID – Drain Current (mA) VDS – Drain-to-Source Voltage (V) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) 4 Siliconix S-52426—Rev. C, 14-Apr-97