ETC ND2406L

ND2406L/2410L, BSS129
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
V(BR)DSV Min (V)
ND2406L
rDS(on) Max ()
VGS(off) (V)
ID (A)
6
–1.5 to –4.5
0.23
10
–0.5 to –2.5
0.18
20
–0.7 (min)
0.15
240
ND2410L
BSS129
230
Features
Benefits
Applications
High Breakdown Voltage: 260 V
Normally “On” Low rDS Switch: 3.5 Low Input and Output Leakage
Low-Power Drive Requirement
Low Input Capacitance
Full-Voltage Operation
Low Offset Voltage
Low Error Voltage
Easily Driven Without Buffer
High-Speed Switching
TO-226AA
(TO-92)
Normally “On” Switching Circuits
Current Sources/Limiters
Power Supply, Converter Circuits
Solid-State Relays
Telecom Switches
TO-92-18CD
(TO-18 Lead Form)
S
1
S
1
G
2
D
2
D
3
G
3
Top View
Top View
ND2406L
ND2410L
BSS129
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
Parameter
Symbol
ND2406L
ND2410L
BSS129
Drain-Source Voltage
VDS
240
240
230
Gate-Source Voltage
VGS
30
30
20
0.23
0.18
0.15
0.14
0.12
0.9
0.9
0.6
0.8
0.8
1.0
0.32
0.32
0.4
156
125
Continuous Drain Current (TJ = 150C)
Pulsed Drain
= = Currenta
Power Dissipation
ID
IDM
= = Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
PD
RthJA
TJ, Tstg
156
–55 to 150
Unit
V
A
W
C/W
C
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198.
Applications information may also be obtained via FaxBack, request document #70612.
Siliconix
S-52426—Rev. C, 14-Apr-97
1
ND2406L/2410L, BSS129
Specificationsa
Limits
ND2406L
Parameter
Symbol
Test Conditions
Typb Min
Max
ND2410L
Min
Max
BSS129
Min
Max
Unit
Static
Drain-Source
D
i S
Breakdown Voltage
g
V(BR)DSV
VGS = –9 V, ID = 10 mA
260
VGS = –5 V, ID = 10 mA
260
VGS = –3 V, ID = 250 mA
260
VDS = 5 V, ID = 10 mA
Gate Source Cutoff Voltage
Gate-Source
Gate Body Leakage
Gate-Body
VGS(off)
GS( ff)
IGSS
240
240
230
–1.5
VDS = 0 V, VGS = "20 V
TJ = 125C
"10
"10
"50
"50
"100
200
VDS = 180 V, VGS = –5 V
1
TJ = 125C
mA
200
0.1
TJ = 125C
Drain Source On-Resistance
Drain-Source
On Resistancec
IDSS
rDS(on)
DS( )
Forward Transconductance c
gfs
f
Common Source
Output Conductancec
gos
200
VDS = 10 V, VGS = 0 V
350
VGS = 2 V, ID = 30 mA
3.3
VGS = 0 V, ID = 30 mA
4.5
6
10
7.2
15
25
TJ = 125C
VGS = 0 V, ID = 14 mA
4
VDS = 25 V, ID = 250 mA
375
40
40
mA
W
20
140
mS
110
VDS = 10 V, ID = 30 A
nA
1
VDS = 230 V, VGS = –3 V
Drain-Saturation Currentc
V
–2.5
–0.7
TJ = 125C
ID(off)
D( ff)
–0.5
VDS = 3 V, ID = 1 mA
VDS = 180 V, VGS = –9 V
Drain Cutoff Current
–4.5
mS
70
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25 V,
V VGS = –55 V
f = 1 MHz
70
120
120
20
30
30
10
15
15
pF
Switchingd
Turn On Time
Turn-On
Turn-Off Time
td(on)
tr
td(off)
15
VDD = 25 V, RL = 830 W
ID ^ 30 mA,
mA VGEN = -5 V
RG = 25 W
tf
Notes
a. TA = 25C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
2
75
ns
40
100
VDDV24
Siliconix
S-52426—Rev. C, 14-Apr-97
ND2406L/2410L, BSS129
Typical Characteristics (25C Unless Otherwise Noted)
Output Characteristics (ND2406)
200
–0.8 V
VGS = 2 V
160
0V
–1 V
–0.4 V
160
–0.6 V
120
–1.2 V
–1.4 V
80
0.2 V
VGS = 2 V
I D – Drain Current (mA)
I D – Drain Current (mA)
Output Characteristics (ND2410)
200
–1.6 V
40
0.4 V
–0.2 V
120
–0.4 V
80
–0.6 V
40
–0.8 V
–1 V
–1.8 V
–2 V
0
0
0
0.4
0.8
1.2
1.6
2
0
VDS – Drain-to-Source Voltage (V)
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics (ND2406)
500
0.4
Transfer Characteristics (ND2410)
500
TC = –55C
VDS = 10 V
VDS = 10 V
125C
400
25C
I D – Drain Current (mA)
I D – Drain Current (mA)
400
300
200
100
300
200
–55C
25C
100
TC = 125C
0
–4.5
–3.5
–2.5
–1.5
–0.5
0
–4.5
0.5
VGS – Gate-Source Voltage (V)
1000
–1.5
–0.5
0.5
On-Resistance vs. DrainCurrent
25
VGS = 0 V
IDSS
600
6
400
4
200
2
I DSS – Drain Current (mA)
800
8
rDS(on) – On-Resistance ( )
rDS(on)
rDS(on) – On-Resistance ( )
–2.5
VGS – Gate-Source Voltage (V)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
10
–3.5
20
15
ND2410
10
ND2406
5
rDS @ ID = 30 mA, VGS = 0 V
IDSS @ VDS = 7.5 V, VGS = 0 V
0
0
–1
–2
–3
–4
–5
VGS(off) – Gate-Source Cutoff Voltage (V)
Siliconix
S-52426—Rev. C, 14-Apr-97
–6
0
10
100
1K
ID – Drain Current (mA)
3
ND2406L/2410L, BSS129
Typical Characteristics (25C Unless Otherwise Noted) (Cont’d)
Normalized On-Resistance
vs. Junction Temperature
350
2.00
Forward Transconductance vs. Drain Current
25C
VGS = 0 V
I D = 30 mA
g fs – Forward Transconductance (mS)
rDS(on) – Drain-Source On-Resistance
(Normalized)
2.25
1.75
1.50
1.25
1.00
0.75
300
150C
250
–55C
200
150
100
VDS = 10 V
Pulse Test 80 ms,
1% Duty Cycle
50
0
0.50
–50
–10
30
70
150
110
1
10
TJ – Junction Temperature (C)
Capacitance
Load Condition Effects on Switching
300
t – Switching Time (ns)
160
120
C iss
80
40
VDD = 25 V
VGS = 0 to –5 V
RG = 25W
tf
VGS = –5 V
f = 1 MHz
200
1K
ID – Drain Current (mA)
240
C – Capacitance (pF)
100
t d(off)
100
tr
td(on)
10
C oss
C rss
0
3
0
10
20
30
40
50
10
1
100
ID – Drain Current (mA)
VDS – Drain-to-Source Voltage (V)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1 0.05
0.02
PDM
t1
t2
1. Duty Cycle, D =
0.01
t1
t2
2. Per Unit Base = RthJA = 156C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
0.1
1
10
100
1K
10 K
t1 – Square Wave Pulse Duration (sec)
4
Siliconix
S-52426—Rev. C, 14-Apr-97