Si1037X New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) –20 TrenchFETr Power MOSFET Low Threshold Smallest LITTLE FOOTr Package: 1.6 mm x 1.6 mm Low 0.6-mm Profile rDS(on) (W) ID (A) 0.195 @ VGS = –4.5 V –0.84 APPLICATIONS 0.260 @ VGS = –2.5 V –0.73 0.350 @ VGS = –1.8 V –0.64 D Cell Phones and Pagers – Load Switch D Battery Operated Systems SC-89 (6-LEADS) D 1 6 D D 2 5 D G 3 4 Marking Code N WL Lot Traceability and Date Code S Pin 1 Identifier Part Number Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V –0.84 –0.77 –0.68 –0.62 ID TA = 70_C Pulsed Drain Current IDM Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 70_C Operating Junction and Storage Temperature Range PD A –4 –0.18 –0.14 0.21 0.17 0.13 0.10 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t v 5 sec Steady State RthJA Typical Maximum 500 600 600 720 Unit _ _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board with minimum copper. Document Number: 70686 S-04766—Rev. A, 08-Oct-01 www.vishay.com 1 Si1037X New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward VDS = 0 V, VGS = "8 V Voltagea "100 VDS = –16 V, VGS = 0 V –1 VDS = –16 V, VGS = 0 V, TJ = 70_C –5 VDS = –5 V, VGS = –4.5 V –4 nA m mA A VGS = –4.5 V, ID = –0.77 A 0.160 0.195 VGS = –2.5 V, ID = –0.67 A 0.212 0.260 VGS = –1.8 V, ID = –0.2 A 0.290 0.350 gfs VDS = –10 V, ID = –0.77 A 3.1 VSD IS = –0.14 A, VGS = 0 V –0.78 –1.2 3.5 5.5 rDS(on) Forward Transconductancea V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.60 Turn-On Delay Time td(on) 10 20 tr 15 30 30 60 10 20 20 40 Rise Time Turn-Off Delay Time VDS = –10 V, VGS = –4.5 V, ID = –0.77 A VDD = –10 V, RL = 20 W ID ^ –0.5 A, VGEN = –4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 0.65 IF = –0.14 A, di/dt = 100 A/ms nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 4.0 4.0 VGS = 5 thru 2.5 V TC = –55_C 3.2 3.2 25_C I D – Drain Current (A) I D – Drain Current (A) 2V 2.4 1.6 1.5 V 0.8 125_C 2.4 1.6 0.8 1V 0.0 0.0 0.8 1.6 2.4 3.2 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 4.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS – Gate-to-Source Voltage (V) Document Number: 70686 S-04766—Rev. A, 08-Oct-01 Si1037X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 600 0.5 500 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) On-Resistance vs. Drain Current 0.6 VGS = 1.8 V 0.4 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V Ciss 400 300 200 Coss 0.1 100 0.0 Crss 0 0 1 2 3 4 0 4 ID – Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 0.77 A r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS – Drain-to-Source Voltage (V) 5 4 3 2 1 VGS = 4.5 V ID = 0.77 A 1.4 1.2 1.0 0.8 0 0 1 2 3 0.6 –50 4 –25 0 Qg – Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.5 r DS(on) – On-Resistance ( W ) TJ = 150_C 1 TJ = 25_C 0.1 0.0 25 TJ – Junction Temperature (_C) 4 I S – Source Current (A) 8 0.4 ID = 0.77 A 0.3 ID = 0.2 A 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 70686 S-04766—Rev. A, 08-Oct-01 1.2 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si1037X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.35 4 3 ID = 250 mA Power (W) V GS(th) Variance (V) 0.25 0.15 0.05 2 1 –0.05 –0.15 –50 –25 0 25 50 75 100 125 150 0 10–2 10–1 1 TJ – Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 600_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 70686 S-04766—Rev. A, 08-Oct-01