TN0200T/TS N-Channel Enhancement-Mode MOSFET TO-236 (SOT-23) Product Summary ID (A) rDS(on) () TN0200T 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 Top View TN0200TS G 1 3 S TN0200T (N0)* TN0200TS (NS)* *Marking Code for TO-236 D 2 Features Benefits Applications Low On-Resistance: 0.29 Low Threshold: 0.9 V (typ) 2.5-V or Lower Operation Fast Switching Speed: 22 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Low Battery Voltage Operation Direct Logic-Level Interfact: TTL/CMOS Dirvers: Relays, Solenoids, Lamps, Hammers Battery Operated Systems, DC/DC Converters Solid-State Relays Load/Power Switching–Cell Phones, Pagers Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Symbol TN0200T TN0200TSc Drain-Source Voltage VDS 20 20 Gate-Source Voltage VGS 8 8 0.73 1.2 0.58 1.0 IDM 4 4 IS 0.6 1.0 Parameter Continuous Drain Current (TJ = 150C)b Pulsed Drain TA= 25C TA= 70C Currenta Continuous Source Current (Diode Conduction)b TA= 25C Power Dissipationb TA= 70C Operating Junction and Storage Temperature Range ID PD 0.35 1.0 0.22 0.65 TJ, Tstg Unit V A W C –55 to 150 Thermal Resistance Ratings Parameter Maximum Junction-to-Ambientb Symbol TN0200T TN0200TSc Unit RthJA 357 125 C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t 10 sec. c. Copper lead frame. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70202. A SPICE Model data sheet is available for this product (FaxBack document #70560). Siliconix S-52426—Rev. B, 14-Apr-97 1 TN0200T/TS Specificationsa Limits Parameter Symbol Test Conditions Min Typ Max Unit Static V(BR)DSS VGS = 0 V, ID = 10 mA 20 36 VGS(th) VDS = VGS, ID = 50 mA 0.5 0.9 Gate-Body Leakage IGSS VDS = V, VGS = "8 V "100 IDSS VDS = 16 V, VGS = 0 V 1 Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage Gate-Threshold Voltage On State Drain Currentb On-State ID(on) D( ) Drain Source On-Resistance Drain-Source On Resistanceb rDS(on) DS( ) Forward Transconductance b Diode Forward Voltageb V TJ = 55C 1.5 10 VDS w 5 V, VGS = 4.5 V 2.5 VDS w 5 V, VGS = 2.5 V 1.5 nA mA A VGS = 4.5 V, ID = 0.6 A 0.29 0.4 VGS = 2.5 V, ID = 0.6 A 0.34 0.5 gfs VDS = 5 V, ID = 0.6 A 2.2 VSD IS = 0.6 A, VGS = 0 V 0.8 1.2 1900 2800 W S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 750 Input Capacitance Ciss 90 Output Capacitance Coss Reverse Transfer Capacitance Crss 12 td(on) 8 13 14 21 21 30 7 11 VDS = 10 V, VGS = 4.5 V, ID = 0.6 A VDS = 10 V, VGS = 0 V, f = 1 MHz 50 pC 45 pF Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. TA = 25C unless otherwise noted. b. Pulse test: PW v300 ms duty cycle v2%. 2 tr td(off) tf W ^ 0.6 W ns VNLJ02 Siliconix S-52426—Rev. B, 14-Apr-97 TN0200T/TS Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics 6.0 3.5 V VGS = 5, 4.5, 4 V Transfer Characteristics 4 TC = –55C 3V 4.0 I D – Drain Current (A) I D – Drain Current (A) 5.0 2.5 V 3.0 2V 2.0 0, 0.5, 1 V 1.0 3 25C 2 1 1.5 V 0 0 0 1 2 3 0 4 VDS – Drain-to-Source Voltage (V) 0.5 1.0 250 0.8 200 C – Capacitance (pF) rDS(on) – On-Resistance ( ) 2.0 2.5 3.0 Capacitance 1.0 0.6 VGS = 4.5 V VGS = 2.5 V 1.5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.4 0.2 150 Ciss 100 Coss 50 0 Crss 0 0 1 2 3 4 5 6 7 0 Gate Charge 5 1.7 rDS(on) – On-Resistance ( ) (Normalized) 4 3 VDS = 10 V ID = 0.6 A 2 1 0 0 300 600 900 1200 1500 Qg – Total Gate Charge (nC) Siliconix S-52426—Rev. B, 14-Apr-97 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) VGS – Gate-to-Source Voltage (V) 125C 1800 2100 1.5 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.6 A 1.3 1.1 0.9 0.7 –50 0 50 100 150 TJ – Junction Temperature (C) 3 TN0200T/TS Typical Characteristics (25C Unless Otherwise Noted) Source-Drain Diode Forward Voltage rDS(on) – On-Resistance ( W ) I S – Source Current (A) TJ = 150C TJ = 25C 1 On-Resistance vs. Gate-to-Source Voltage 0.8 10 0.1 0.6 0.4 0.2 0.01 ID = 0.6 A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 VSD – Source-to-Drain Voltage (V) 4 5 8 –0.0 Power (W) ID = 50 mA –0.1 6 4 TC = 25C Single Pulse –0.2 2 –0.3 0 –0.4 –50 0 50 100 150 0.001 0.01 0.1 TJ – Temperature (C) 1 1.0 10.0 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 3 Single Pulse Power 10 0.1 VGS(th) Variance (V) 2 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) 4 Siliconix S-52426—Rev. B, 14-Apr-97