ZXMHC6A07N8

A Product Line of
Diodes Incorporated
ZXMHC6A07N8
60V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device
N-CH
P-CH
V(BR)DSS
QG
60V
RDS(on)
ID
TA= 25°C
0.25Ω @ VGS= 10V
1.8A
0.35Ω @ VGS= 4.5V
1.5A
0.40Ω @ VGS= -10V
-1.4A
0.60Ω @ VGS= -4.5V
-1.2A
3.2nC
-60V
5.1nC
P1S/P2S
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
P1G
P2G
Features
•
P1D/N1D
2 x N + 2 x P channels in a SOIC package
P2D/N2D
Applications
•
DC Motor control
•
DC-AC Inverters
N1G
N2G
N1S/N2S
Ordering information
Device
ZXMHC6A07N8TC
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
13
12
2,500
Device marking
ZXMHC
6A07
Issue 1.0 - March 2009
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ZXMHC6A07N8
Absolute maximum ratings
Parameter
Symbol
Nchannel
Pchannel
Unit
Drain-Source voltage
VDSS
60
-60
V
Gate-Source voltage
VGS
±20
±20
V
ID
1.80
-1.42
A
(b)
1.40
-1.28
(a)
1.39
-1.28
(f)
1.42
-1.33
IDM
7.10
-6.03
A
IS
1.00
-1.00
A
ISM
7.10
-6.03
A
Continuous Drain current @ VGS= 10V; TA=25°C
@ VGS= 10V; TA=70°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TL=25°C
Pulsed Drain current @ VGS= 10V; TA=25°C
(b)
(c)
Continuous Source current (Body diode) at TA =25°C
Pulsed Source current (Body diode) at TA =25°C
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TL =25°C
Linear derating factor
(c)
(a)
(b)
PD
0.87
6.94
(b)
PD
1.36
10.9
(f)
W
mW/°C
7.19
W
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Value
Unit
RθJA
144
°C/W
RθJA
92
°C/W
RθJA
106
°C/W
RθJA
254
°C/W
RθJL
139
°C/W
PD
Operating and storage temperature range
0.90
W
mW/°C
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
Junction to lead
(a)
(b)
(d)
(e)
(f)
NOTES:
(a)
(b)
(c)
(d)
(e)
(f)
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
Same as note (a), except the device is measured at t ≤ 10 sec.
Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the
maximum junction temperature.
For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when
operating in a steady-state condition with one active die.
Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state
condition with one active die.
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ZXMHC6A07N8
Thermal characteristics
10
RDS(ON)
Limited
-ID Drain Current (A)
ID Drain Current (A)
10
1
DC
1s
100m
100ms
10m
Limited
1
DC
1s
100m
10ms
1ms
Note (a)
RDS(ON)
100us
Single Pulse, T amb=25°C
1
100ms
10ms
Note (a)
10m
1ms
Single Pulse, Tamb=25°C
1
10
VDS Drain-Source Voltage (V)
100us
10
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
One Active Die
25 x 25mm 1oz
120
100
80
D=0.5
60
40
Single Pulse
D=0.2
D=0.05
20
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Any one
active die
0.5
0.0
0
25
50
75
100
125
150
Temperature (°C)
Transient Thermal Impedance
Maximum Power (W)
Max Power Dissipation (W)
Thermal Resistance (°C/W)
1.0
140
Derating Curve
One Active Die
Single Pulse
T amb=25°C
100
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
Issue 1.0 - March 2009
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ZXMHC6A07N8
N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
60
Zero Gate voltage Drain
current
IDSS
IGSS
Typ.
Max.
Unit
Conditions
Static
Gate-Body leakage
Gate-Source threshold
voltage
VGS(th)
1.0
V
ID = 250μA, VGS= 0V
0.5
µA
VDS= 60V, VGS= 0V
±100
nA
VGS= ±20V, VDS= 0V
3.0
V
ID= 250μA, VDS= VGS
0.25
0.35
Ω
VGS= 10V, ID= 1.8A
VGS= 4.5V, ID= 1.3A
VDS= 15V, ID= 1.8A
Static Drain-Source
(a)
on-state resistance
RDS(on)
Forward
(a) (c)
Transconductance
gfs
2.3
S
Input capacitance
Ciss
166
pF
Output capacitance
Coss
19.5
pF
Reverse transfer
capacitance
Crss
8.7
pF
Turn-on-delay time
td(on)
1.8
ns
Rise time
tr
1.4
ns
Turn-off delay time
td(off)
4.9
ns
Fall time
tf
2.0
ns
Total Gate charge
Qg
3.2
nC
Gate-Source charge
Qgs
0.67
nC
Gate-Drain charge
Qgd
0.82
nC
VSD
0.80
trr
20.5
ns
Qrr
21.3
nC
Dynamic
Capacitance
Switching
(c)
VDS= 40V, VGS= 0V
f= 1MHz
(b) (c)
Gate charge
VDD= 30V, VGS= 10V
ID= 1.8A
RG ≅ 6.0Ω,
(c)
VDS=30V, VGS= 10V
ID= 1.8A
Source–Drain diode
Diode forward voltage
Reverse recovery time
(a)
(c)
Reverse recovery charge
(c)
0.95
V
IS= 0.45A, VGS= 0V
IS= 1.8A, di/dt= 100A/μs
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.0 - March 2009
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ZXMHC6A07N8
N-channel typical characteristics
10V 6V
T = 25°C
10
4V
3.5V
ID Drain Current (A)
ID Drain Current (A)
10
3V
1
2.5V
0.1
VGS
2V
0.01
0.1
1
10V 6V
T = 150°C
VGS
3.5V
3V
1
2.5V
2V
0.1
1.5V
0.01
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
T = 25°C
0.1
1.0
RDS(on) Drain-Source On-Resistance (W)
T = 150°C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS = 10V
1.6
ID = 1.8A
1.4
RDS(on)
1.2
1.0
VGS(th)
0.8
VGS = VDS
0.6
0.4
-50
ID = 250uA
0
50
100
150
VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
10
10
2.5V
3V
3.5V
4V
VGS
T = 25°C
1
4.5V
5V
10V
0.1
0.1
1
ID Drain Current (A)
On-Resistance v Drain Current
Issue 1.0 - March 2009
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ISD Reverse Drain Current (A)
ID Drain Current (A)
1
Normalised RDS(on) and VGS(th)
1.8
VDS = 10V
T = 150°C
1
T = 25°C
0.1
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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ZXMHC6A07N8
200
180
160
140
120
100
80
60
40
20
0
10
VGS = 0V
VGS Gate-Source Voltage (V)
C Capacitance (pF)
N-channel typical characteristics –continued
CISS
f = 1MHz
COSS
CRSS
1
10
VDS - Drain - Source Voltage (V)
ID = 1.8A
8
6
VDS = 30V
4
2
0
0
1
2
3
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test circuits
Current
regulator
QG
12V
VG
QGS
50k
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
Issue 1.0 - March 2009
© Diodes Incorporated
Switching time test circuit
6
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ZXMHC6A07N8
P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
-60
Zero Gate voltage Drain
current
IDSS
IGSS
Typ.
Max.
Unit
Conditions
Static
Gate-Body leakage
Gate-Source threshold
voltage
VGS(th)
-1.0
V
ID = -250μA, VGS= 0V
-0.5
µA
VDS= -60V, VGS= 0V
±100
nA
VGS= ±20V, VDS= 0V
-3.0
V
ID= -250μA, VDS= VGS
0.40
0.60
Ω
VGS= -10V, ID= -0.9A
VGS= -4.5V, ID= -0.8A
VDS= -15V, ID= -0.9A
Static Drain-Source
(a)
on-state resistance
RDS(on)
Forward
(a) (c)
Transconductance
gfs
1.8
S
Input capacitance
Ciss
141
pF
Output capacitance
Coss
13.1
pF
Reverse transfer
capacitance
Crss
10.8
pF
Turn-on-delay time
td(on)
1.6
ns
Rise time
tr
2.3
ns
Turn-off delay time
td(off)
13
ns
Fall time
tf
5.8
ns
Total Gate charge
Qg
5.1
nC
Gate-Source charge
Qgs
0.7
nC
Gate-Drain charge
Qgd
0.7
nC
VSD
-0.85
trr
22.6
ns
Qrr
23.2
nC
Dynamic
Capacitance
Switching
(c)
VDS= -50V, VGS= 0V
f= 1MHz
(b) (c)
Gate charge
VDD= -30V, VGS= -10V
ID= -1.0A
RG ≅ 6.0Ω
(c)
VDS= -30V, VGS= -10V
ID= -0.9A
Source–Drain diode
Diode forward voltage
Reverse recovery time
(a)
(c)
Reverse recovery charge
(c)
-0.95
V
IS= -0.8A, VGS= 0V
IS= -0.9A, di/dt= 100A/μs
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.0 - March 2009
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ZXMHC6A07N8
P-channel typical characteristics
T = 25°C
10V
10
4.5V
3.5V
3V
2.5V
1
-ID Drain Current (A)
-ID Drain Current (A)
10
2V
-VGS
0.1
10V
5V 4.5V
T = 150°C
3.5V
3V
1
2.5V
2V
0.1
1.5V
-VGS
0.01
0.1
1
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
1.8
T = 150°C
T = 25°C
0.1
1
2
-VDS = 10V
3
4
VGS = -10V
1.6
ID = -0.9A
RDS(on)
1.4
1.2
1.0
VGS(th)
VGS = VDS
0.8
ID = -250uA
0.6
-50
5
0
-VGS Gate-Source Voltage (V)
3V
2V
2.5V
-VGS
T = 25°C
3.5V
4V
5V
1
7V
10V
1
T = 150°C
Issue 1.0 - March 2009
© Diodes Incorporated
T = 25°C
1
0.1
10
0.4
0.6
0.8
1.0
1.2
1.4
-VSD Source-Drain Voltage (V)
-ID Drain Current (A)
On-Resistance v Drain Current
150
10
0.01
0.1
100
Normalised Curves v Temperature
-ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
Typical Transfer Characteristics
1.5V
50
Tj Junction Temperature (°C)
Source-Drain Diode Forward Voltage
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ZXMHC6A07N8
P-channel typical characteristics –continued
10
VGS = 0V
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
300
f = 1MHz
CISS
200
COSS
100
CRSS
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
ID = -0.9A
8
6
4
2
VDS = -30V
0
0
1
2
3
4
5
6
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test circuits
Current
regulator
QG
12V
VG
QGS
50k
0.2␮F
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Gate charge test circuit
Basic gate charge waveform
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
tr
td(off)
t(on)
tr
t(on)
Switching time test circuit
Switching time waveforms
Issue 1.0 - March 2009
© Diodes Incorporated
Pulse width ⬍ 1␮S
Duty factor 0.1%
td(on)
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ZXMHC6A07N8
Packaging details - SO8
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Max.
Max.
Min.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
θ
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
-
-
-
-
-
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
Min.
1.27 BSC
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMHC6A07N8
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS
FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems
without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use
provided in the
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B. A critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support
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