DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V(BR)DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Applications 2 x N + 2 x P channels in a SOIC package Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description DC Motor control DC-AC Inverters Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) P2G P1S/P2S N2D/P2D P1G NEW PRODUCT ADVANCE INFORMATION Product Summary SO-8 H-Bridge N2G N1S/N2S N1D/P1D N1G Top View Pin Configuration Top View Internal Schematic Ordering Information (Note 4) Part Number DMHC3025LSD-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking C3025LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) C3025LS YY WW 1 DMHC3025LSD Document number: DS35821 Rev. 4 - 2 4 1 of 9 www.diodes.com November 2013 © Diodes Incorporated DMHC3025LSD Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Steady State t < 10s NEW PRODUCT ADVANCE INFORMATION Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Value 1.5 83 50 14.5 -55 to 150 Units W Units V V ID Value 30 ±20 6.0 4.8 ID 7.8 6.1 A ID 4.6 3.6 A RθJA RθJC TJ, TSTG °C/W °C Maximum Ratings N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State t < 10s Continuous Drain Current (Note 5) VGS = 4.5V Steady State t < 10s TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) ID IS IDM 6.1 4.8 2.5 60 A A A A Maximum Ratings P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V Steady State t < 10s Continuous Drain Current (Note 5) VGS = -4.5V Steady State t < 10s TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Note: ID Value 30 ±20 -4.2 -3.3 ID -5.4 -4.3 A ID -3.2 -2.5 A ID -4.3 -3.3 A IS IDM -2.5 -30 Units V V A A A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMHC3025LSD Document number: DS35821 Rev. 4 - 2 2 of 9 www.diodes.com November 2013 © Diodes Incorporated DMHC3025LSD NEW PRODUCT ADVANCE INFORMATION Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 0.5 ±1 V μA μA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD — 19 26 4 0.70 2 25 40 — 1.2 V Static Drain-Source On-Resistance 1 — — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 5A VGS = 4.5V, ID = 4A VDS = 5V, ID = 5A VGS = 0V, IS = 1.7A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 590 122 58 1.5 5.4 11.7 1.8 2.1 11.2 15 17.5 8.7 18.3 12 — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge mΩ S V Test Condition pF VDS = 15V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 15V, ID = 7.8A ns VDD = 15V, VGS = 4.5V, RL = 2.4Ω, RG = 1Ω, ns nC IF = 12A, di/dt = 500A/μs Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -0.5 ±1 V μA μA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD — 43 68 3.5 -0.7 -2 50 80 — -1.2 V Static Drain-Source On-Resistance -1 — — — — VDS = VGS, ID = -250μA VGS = -10V, ID = -5A VGS = -4.5V, ID = -4A VDS = -5V, ID = -5A VGS = 0V, IS = -1.7A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 631 137 70 10.8 5.5 11.4 1.8 2.4 7.5 4.9 28.2 13.5 15.1 15.3 — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Test Condition VDS = -15V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -6A VDD = -15V, VGS = -10V, RG = 6Ω, ID = -1A IF = 12A, di/dt = 500A/μs 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMHC3025LSD Document number: DS35821 Rev. 4 - 2 3 of 9 www.diodes.com November 2013 © Diodes Incorporated DMHC3025LSD Typical Characteristics - N-CHANNEL 20 20 VGS = 10V 18 16 15 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5.0V VGS = 4.5V VGS = 3.0V VGS = 3.5V 10 VGS = 3.0V 5 14 12 10 TA = 150°C 8 TA = 125°C 6 T A = 85°C 4 0 VGS = 2.2V 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.04 0.03 VGS = 4.5V VGS = 10V 0.01 0 0 2 0 5 0.05 0.02 T A = -55°C 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.15 0.12 0.09 0.06 ID = 5.0A 0.03 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage ID = 4.0A 0 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 1.8 0.08 VGS = 4.5V 0.06 TA = 150°C 0.04 TA = 125°C TA = 85°C TA = 25°C 0.02 0 TA = 25°C 2 VGS = 2.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT ADVANCE INFORMATION VGS = 3.0V TA = -55°C 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMHC3025LSD Document number: DS35821 Rev. 4 - 2 20 4 of 9 www.diodes.com 1.6 VGS = 10V ID = 10A 1.4 1.2 VGS = 4.5V ID = 5A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature November 2013 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.06 3.0 0.05 2.5 VGS = 4.5V ID = 5A 0.04 2.0 ID = 1mA 0.03 1.5 ID = 250µA 0.02 1.0 VGS = 10V ID = 10A 0.01 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 0 -50 1,000 20 15 10 TA = 150°C T A = 125°C TA = 85°C 5 T A = 25°C Ciss 100 Coss Crss TA = -55°C 0 0 f = 1MHz 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 10 VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION DMHC3025LSD VDS = 15V ID = 7.8A 8 6 4 2 0 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMHC3025LSD Document number: DS35821 Rev. 4 - 2 12 5 of 9 www.diodes.com November 2013 © Diodes Incorporated DMHC3025LSD Typical Characteristics - P-CHANNEL 20 20 VGS = -10V 18 VGS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -4.0V 10 VGS = -3.5V 5 VGS = -2.2V 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.16 0.14 0.12 0.10 0.08 VGS = -4.5V 0.06 VGS = -10V 0.02 0 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 14 Typical On-Resistance vs. Drain Current and Gate Voltage 8 6 TA = 150C TA = 125 C TA = 85C TA = 25C TA = -55C 0 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Figure 13 Typical Transfer Characteristics 5 0.15 ID = -5.0A 0.12 0.09 ID = -4.0A 0.06 0.03 20 0 0 2 4 6 8 10 12 14 16 18 20 -VGS, GATE-SOURCE VOLTAGE (V) Figure 15 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 1.6 0.3 VGS = -10V ID = -10A VGS = -4.5V 0.2 TA = 150C TA = 125C 0.1 TA = 85C TA = 25C TA = -55C 0 10 0 5 0.18 0.04 12 2 VGS = -2.5V 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 12 Typical Output Characteristics 14 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VDS = -5.0V 16 15 VGS = -3.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT ADVANCE INFORMATION VGS = -4.5V 0 2 4 6 8 10 12 14 16 18 20 -ID, DRAIN SOURCE CURRENT (A) Figure 16 Typical On-Resistance vs. Drain Current and Temperature DMHC3025LSD Document number: DS35821 Rev. 4 - 2 6 of 9 www.diodes.com 1.4 1.2 VGS = -4.5V ID = -5A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 17 On-Resistance Variation with Temperature November 2013 © Diodes Incorporated 3.0 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 0.10 0.09 0.08 0.07 VGS = -4.5V ID = -5A 0.06 0.05 VGS = -10V ID = -10A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 18 On-Resistance Variation with Temperature 2.0 -ID = 250µA 1.5 -ID = 1mA 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 19 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) -IS, SOURCE CURRENT (A) 15 10 TA= 150C 5 TA= 125C TA= 85C TA= 25C 0 2.5 1,000 20 100 Coss Crss f = 1MHz TA= -55 C 0 Ciss 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 20 Diode Forward Voltage vs. Current 10 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 21 Typical Junction Capacitance 30 10 -VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION DMHC3025LSD 8 VDS = -15V ID = -6A 6 4 2 0 Qg, TOTAL GATE CHARGE (nC) Figure 22 Gate-Charge Characteristics DMHC3025LSD Document number: DS35821 Rev. 4 - 2 7 of 9 www.diodes.com November 2013 © Diodes Incorporated DMHC3025LSD Package Outline Dimensions 0.254 NEW PRODUCT ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMHC3025LSD Document number: DS35821 Rev. 4 - 2 8 of 9 www.diodes.com November 2013 © Diodes Incorporated DMHC3025LSD IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com DMHC3025LSD Document number: DS35821 Rev. 4 - 2 9 of 9 www.diodes.com November 2013 © Diodes Incorporated