DMHC3025LSDQ 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device NEW PRODUCT ADVANCE INFORMATION N-Channel P-Channel Features • 2 x N + 2 x P channels in a SOIC package • Low On-Resistance 25mΩ @ VGS = 10V ID max TA = +25°C 6.0 • Low Input Capacitance 40mΩ @ VGS = 4.5V 4.6 • Fast Switching Speed 50mΩ @ VGS = -10V -4.2 • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 80mΩ @ VGS = -4.5V -3.2 V(BR)DSS RDS(ON) max 30V -30V • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Description and Applications • PPAP Capable (Note 4) This new generation complementary MOSFET H-Bridge features Mechanical Data 2 N and 2 P channel in an SOIC package. Qualified to AECQ101 the • H bridge is ideally suited to driving : • Solenoids • DC Motors • Audio Outputs • Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 • Weight: 0.074 grams (approximate) P2G P1S/P2S N2D/P2D P1G SO-8 H-Bridge N2G N1S/N2S N1D/P1D N1G Top View Pin Configuration Top View Internal Schematic Ordering Information (Note 5) Part Number DMHC3025LSDQ-13 Notes: Compliance Automotive Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking C3025LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) C3025LS YY WW 1 DMHC3025LSDQ Document number: DS37220 Rev. 1 - 2 4 1 of 9 www.diodes.com May 2014 © Diodes Incorporated DMHC3025LSDQ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) PD 1.5 W RθJA 83 50 °C/W Thermal Resistance, Junction to Case RθJC 14.5 Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C Value Units Steady State t < 10s NEW PRODUCT ADVANCE INFORMATION Thermal Resistance, Junction to Ambient (Note 6) Maximum Ratings N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V A Steady State TA = +25°C TA = +70°C ID 6.0 4.8 t < 10s TA = +25°C TA = +70°C ID 7.8 6.1 A Steady State TA = +25°C TA = +70°C ID 4.6 3.6 A t < 10s TA = +25°C TA = +70°C ID 6.1 4.8 A Maximum Continuous Body Diode Forward Current (Note 5) IS 2.5 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 60 A Continuous Drain Current (Note 6) VGS = 10V Continuous Drain Current (Note 6) VGS = 4.5V Maximum Ratings P-CHANNEL (@TA = +25°C, unless otherwise specified.) Symbol Value Units Drain-Source Voltage Characteristic VDSS 30 V Gate-Source Voltage VGSS ±20 V A Continuous Drain Current (Note 6) VGS = -10V Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -4.2 -3.3 t < 10s TA = +25°C TA = +70°C ID -5.4 -4.3 A Steady State TA = +25°C TA = +70°C ID -3.2 -2.5 A t < 10s TA = +25°C TA = +70°C ID -4.3 -3.3 A IS -2.5 A IDM -30 A Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Note: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMHC3025LSDQ Document number: DS37220 Rev. 1 - 2 2 of 9 www.diodes.com May 2014 © Diodes Incorporated DMHC3025LSDQ NEW PRODUCT ADVANCE INFORMATION Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 0.5 ±1 V μA μA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD — 19 26 4 0.70 2 25 40 — 1.2 V Static Drain-Source On-Resistance 1 — — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 5A VGS = 4.5V, ID = 4A VDS = 5V, ID = 5A VGS = 0V, IS = 1.7A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 590 122 58 1.5 5.4 11.7 1.8 2.1 11.2 15 17.5 8.7 18.3 12 — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge mΩ S V Test Condition pF VDS = 15V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 15V, ID = 7.8A ns VDD = 15V, VGS = 4.5V, RL = 2.4Ω, RG = 1Ω, ns nC IF = 12A, di/dt = 500A/μs Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -0.5 ±1 V μA μA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD — 43 68 3.5 -0.7 -2 50 80 — -1.2 V Static Drain-Source On-Resistance -1 — — — — VDS = VGS, ID = -250μA VGS = -10V, ID = -5A VGS = -4.5V, ID = -4A VDS = -5V, ID = -5A VGS = 0V, IS = -1.7A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 631 137 70 10.8 5.5 11.4 1.8 2.4 7.5 4.9 28.2 13.5 15.1 15.3 — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Test Condition VDS = -15V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -6A VDD = -15V, VGS = -10V, RG = 6Ω, ID = -1A IF = 12A, di/dt = 500A/μs 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMHC3025LSDQ Document number: DS37220 Rev. 1 - 2 3 of 9 www.diodes.com May 2014 © Diodes Incorporated DMHC3025LSDQ Typical Characteristics - N-CHANNEL 20 20 VGS = 10V 18 16 15 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5.0V VGS = 4.5V VGS = 3.0V VGS = 3.5V 10 VGS = 3.0V 5 14 12 10 TA = 150°C 8 TA = 125°C 6 T A = 85°C 4 0 VGS = 2.2V 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.04 0.03 VGS = 4.5V VGS = 10V 0.01 0 0 2 0 5 0.05 0.02 T A = -55°C 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.15 0.12 0.09 0.06 ID = 5.0A 0.03 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage ID = 4.0A 0 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 1.8 0.08 VGS = 4.5V 0.06 TA = 150°C 0.04 TA = 125°C TA = 85°C TA = 25°C 0.02 0 TA = 25°C 2 VGS = 2.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCE INFORMATION VGS = 3.0V TA = -55°C 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMHC3025LSDQ Document number: DS37220 Rev. 1 - 2 20 4 of 9 www.diodes.com 1.6 VGS = 10V ID = 10A 1.4 1.2 VGS = 4.5V ID = 5A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature May 2014 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.06 3.0 0.05 2.5 VGS = 4.5V ID = 5A 0.04 2.0 ID = 1mA 0.03 1.5 ID = 250µA 0.02 1.0 VGS = 10V ID = 10A 0.01 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 0 -50 1,000 20 15 10 TA = 150°C T A = 125°C TA = 85°C 5 T A = 25°C Ciss 100 Coss Crss TA = -55°C 0 0 f = 1MHz 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 10 VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION DMHC3025LSDQ VDS = 15V ID = 7.8A 8 6 4 2 0 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMHC3025LSDQ Document number: DS37220 Rev. 1 - 2 12 5 of 9 www.diodes.com May 2014 © Diodes Incorporated DMHC3025LSDQ Typical Characteristics - P-CHANNEL 20 20 VGS = -10V 18 VGS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -4.0V 10 VGS = -3.5V 5 VGS = -2.2V 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.16 0.14 0.12 0.10 0.08 VGS = -4.5V 0.06 VGS = -10V 0.02 0 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 14 Typical On-Resistance vs. Drain Current and Gate Voltage 8 6 TA = 150°C TA = 125 °C TA = 85°C TA = 25°C TA = -55°C 0 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Figure 13 Typical Transfer Characteristics 5 0.15 ID = -5.0A 0.12 0.09 ID = -4.0A 0.06 0.03 20 0 0 2 4 6 8 10 12 14 16 18 20 -VGS, GATE-SOURCE VOLTAGE (V) Figure 15 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 1.6 0.3 VGS = -10V ID = -10A VGS = -4.5V 0.2 TA = 150°C TA = 125°C 0.1 TA = 85°C TA = 25°C TA = -55°C 0 10 0 5 0.18 0.04 12 2 VGS = -2.5V 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 12 Typical Output Characteristics 14 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 VDS = -5.0V 16 15 VGS = -3.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCE INFORMATION VGS = -4.5V 0 2 4 6 8 10 12 14 16 18 20 -ID, DRAIN SOURCE CURRENT (A) Figure 16 Typical On-Resistance vs. Drain Current and Temperature DMHC3025LSDQ Document number: DS37220 Rev. 1 - 2 6 of 9 www.diodes.com 1.4 1.2 VGS = -4.5V ID = -5A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 17 On-Resistance Variation with Temperature May 2014 © Diodes Incorporated 3.0 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.10 0.09 0.08 0.07 VGS = -4.5V ID = -5A 0.06 0.05 VGS = -10V ID = -10A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 18 On-Resistance Variation with Temperature 2.0 -ID = 250µA 1.5 -ID = 1mA 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 19 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) -IS, SOURCE CURRENT (A) 15 10 TA= 150°C 5 TA= 125°C TA= 85°C TA= 25°C 0 2.5 1,000 20 100 Coss Crss f = 1MHz TA= -55° C 0 Ciss 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 20 Diode Forward Voltage vs. Current 10 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 21 Typical Junction Capacitance 30 10 -VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION DMHC3025LSDQ 8 VDS = -15V ID = -6A 6 4 2 0 Qg, TOTAL GATE CHARGE (nC) Figure 22 Gate-Charge Characteristics DMHC3025LSDQ Document number: DS37220 Rev. 1 - 2 7 of 9 www.diodes.com May 2014 © Diodes Incorporated DMHC3025LSDQ Package Outline Dimensions 0.254 NEW PRODUCT ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMHC3025LSDQ Document number: DS37220 Rev. 1 - 2 8 of 9 www.diodes.com May 2014 © Diodes Incorporated DMHC3025LSDQ IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com DMHC3025LSDQ Document number: DS37220 Rev. 1 - 2 9 of 9 www.diodes.com May 2014 © Diodes Incorporated