ZXMHC10A07N8

A Product Line of
Diodes Incorporated
ZXMHC10A07N8
100V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device
N-CH
P-CH
V(BR)DSS
QG
100V
RDS(on)
ID
TA= 25°C
0.70Ω @ VGS= 10V
1.0A
0.90Ω @ VGS= 6.0V
0.9A
1.00Ω @ VGS= -10V
-0.9A
1.45Ω @ VGS= -6.0V
-0.7A
2.9nC
-100V
3.5nC
P1S/P2S
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
P2G
P1G
Features
•
P1D/N1D
2 x N + 2 x P channels in a SOIC package
P2D/N2D
Applications
•
DC Motor control
•
DC-AC Inverters
N2G
N1G
N1S/N2S
Ordering information
Device
ZXMHC10A07N8TC
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
13
12
2,500
Device marking
ZXMHC
10A07
Issue 1.0 - March 2009
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ZXMHC10A07N8
Absolute maximum ratings
Parameter
Symbol
Nchannel
Pchannel
Unit
Drain-Source voltage
VDSS
100
-100
V
Gate-Source voltage
VGS
±20
±20
V
ID
1.00
-0.85
A
(b)
0.80
-0.68
(a)
0.80
-0.68
(f)
0.81
-0.69
IDM
4.30
-3.64
A
IS
0.70
-0.60
A
ISM
4.30
-3.64
A
Continuous Drain current @ VGS= 10V; TA=25°C
@ VGS= 10V; TA=70°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TL=25°C
Pulsed Drain current @ VGS= 10V; TA=25°C
(b)
(c)
Continuous Source current (Body diode) at TA =25°C
Pulsed Source current (Body diode) at TA =25°C
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TL =25°C
Linear derating factor
(c)
(a)
(b)
PD
0.87
6.94
(b)
PD
1.36
10.9
(f)
W
mW/°C
7.19
W
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Value
Unit
RθJA
144
°C/W
RθJA
92
°C/W
RθJA
106
°C/W
RθJA
254
°C/W
RθJL
139
°C/W
PD
Operating and storage temperature range
0.90
W
mW/°C
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
Junction to lead
(a)
(b)
(d)
(e)
(f)
NOTES:
(a)
(b)
(c)
(d)
(e)
(f)
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
Same as note (a), except the device is measured at t ≤ 10 sec.
Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the
maximum junction temperature.
For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when
operating in a steady-state condition with one active die.
Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state
condition with one active die.
Issue 1.0 - March 2009
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ZXMHC10A07N8
Thermal characteristics
10
RDS(ON)
RDS(ON)
Limited
-ID Drain Current (A)
ID Drain Current (A)
10
1
DC
100m
1s
1
DC
100m
100ms
10ms
Note (a)
10m
Limited
1ms
Single Pulse, T amb=25°C
1
1s
100ms
Note (a)
10m
100us
10
10ms
1
100
1ms
Single Pulse, T amb=25°C
VDS Drain-Source Voltage (V)
100us
10
100
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
One Active Die
25 x 25mm 1oz
120
100
80
D=0.5
60
40
Single Pulse
D=0.2
D=0.05
20
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Any one
active die
0.5
0.0
0
25
50
75
100
125
150
Temperature (°C)
Transient Thermal Impedance
Maximum Power (W)
Max Power Dissipation (W)
Thermal Resistance (°C/W)
1.0
140
Derating Curve
One Active Die
Single Pulse
T amb=25°C
100
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
Issue 1.0 - March 2009
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ZXMHC10A07N8
N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
100
Zero Gate voltage Drain
current
IDSS
IGSS
Typ.
Max.
Unit
Conditions
Static
Gate-Body leakage
Gate-Source threshold
voltage
VGS(th)
2.0
V
ID = 250μA, VGS= 0V
0.5
µA
VDS= 100V, VGS= 0V
±100
nA
VGS= ±20V, VDS= 0V
4.0
V
ID= 250μA, VDS= VGS
0.7
0.9
Ω
VGS= 10V, ID= 1.5A
VGS= 6.0V, ID= 1.0A
VDS= 15V, ID= 1.0A
Static Drain-Source
(a)
on-state resistance
RDS(on)
Forward
(a) (c)
Transconductance
gfs
1.6
S
Input capacitance
Ciss
138
pF
Output capacitance
Coss
12
pF
Reverse transfer
capacitance
Crss
6
pF
Turn-on-delay time
td(on)
1.8
ns
Rise time
tr
1.5
ns
Turn-off delay time
td(off)
4.1
ns
Fall time
tf
2.1
ns
Total Gate charge
Qg
2.9
nC
Gate-Source charge
Qgs
0.7
nC
Gate-Drain charge
Qgd
1.0
nC
Dynamic
Capacitance
Switching
(c)
VDS= 60V, VGS= 0V
f= 1MHz
(b) (c)
Gate charge
VDD= 50V, VGS= 10V
ID= 1.0A
RG ≅ 6.0Ω,
(c)
VDS=50V, VGS= 10V
ID= 1.0A
Source–Drain diode
Diode forward voltage
Reverse recovery time
(a)
Reverse recovery charge
0.95
VSD
(c)
(c)
V
trr
27
ns
Qrr
12
nC
IS= 1.5A, VGS= 0V
IS= 1.8A, di/dt= 100A/μs
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.0 - March 2009
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ZXMHC10A07N8
N-channel typical characteristics
10V
7V
1
5V
0.1
4.5V
VGS
0.01
4V
0.1
10V
T =150°C
6V
1
ID Drain Current (A)
ID Drain Current (A)
T =25°C
7V
6V
1
5V
4.5V
0.1
4V
VGS
3.5V
0.01
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
2.0
1.8
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
1
T =150°C
0.1
T =25°C
VDS =10V
0.01
3
4
5
6
R DS(on)
1.4
1.2
1.0
VGS(th)
0.8
0.6
VGS =VDS
ID =250uA
0.4
0.2
0.0
-50
VGS Gate-Source Voltage (V)
0
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
10
4.5V
6V
5V
1
VGS
7V
10V
T =25°C
0.01
0.1
Issue 1.0 - March 2009
T =150°C
1
T =25°C
0.1
0.4
1
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
ID Drain Current (A)
On-Resistance v Drain Current
© Diodes Incorporated
ISD Reverse Drain Current (A)
10
RDS(on) Drain-Source On-Resistance (Ω)
VGS =10V
ID =1.5A
1.6
Source-Drain Diode Forward Voltage
5
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ZXMHC10A07N8
N-channel typical characteristics –continued
10
VGS =0V
f =1MHz
C Capacitance (pF)
180
160
140
120
CISS
100
COSS
80
CRSS
60
40
20
0
1
10
100
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VGS Gate-Source Voltage (V)
200
ID =1.0A
8
6
VDS =50V
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test circuits
Current
regulator
QG
12V
VG
QGS
50k
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
Issue 1.0 - March 2009
© Diodes Incorporated
Switching time test circuit
6
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ZXMHC10A07N8
P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
-100
Zero Gate voltage Drain
current
IDSS
IGSS
Typ.
Max.
Unit
Conditions
Static
Gate-Body leakage
Gate-Source threshold
voltage
VGS(th)
-2.0
V
ID = -250μA, VGS= 0V
-0.5
µA
VDS= -100V, VGS= 0V
±100
nA
VGS= ±20V, VDS= 0V
-4.0
V
ID= -250μA, VDS= VGS
1.0
1.45
Ω
VGS= -10V, ID= -0.6A
VGS= -6.0V, ID= -0.5A
VDS= -15V, ID= -0.6A
Static Drain-Source
(a)
on-state resistance
RDS(on)
Forward
(a) (c)
Transconductance
gfs
1.2
S
Input capacitance
Ciss
141
pF
Output capacitance
Coss
13.1
pF
Reverse transfer
capacitance
Crss
10.8
pF
Turn-on-delay time
td(on)
1.6
ns
Rise time
tr
2.1
ns
Turn-off delay time
td(off)
5.9
ns
Fall time
tf
3.3
ns
Total Gate charge
Qg
3.5
nC
Gate-Source charge
Qgs
0.6
nC
Gate-Drain charge
Qgd
1.6
nC
VSD
-0.85
Dynamic
Capacitance
Switching
(c)
VDS= -50V, VGS= 0V
f= 1MHz
(b) (c)
Gate charge
VDD= -50V, VGS= -10V
ID= -1.0A
RG ≅ 6.0Ω
(c)
VDS= -50V, VGS= -10V
ID= -0.6A
Source–Drain diode
Diode forward voltage
Reverse recovery time
(a)
(c)
Reverse recovery charge
(c)
-0.95
V
trr
29
ns
Qrr
31
nC
IS= -0.7A, VGS= 0V
IS= -0.9A, di/dt= 100A/μs
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.0 - March 2009
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ZXMHC10A07N8
P-channel typical characteristics
10
10
10V
7V
5V
1
10V
T = 150°C
-ID Drain Current (A)
-ID Drain Current (A)
T = 25°C
4.5V
4V
0.1
3.5V
0.01
7V
1
5V
4.5V
4V
0.1
3.5V
3V
0.01
-VGS
1E-3
-VGS
1E-3
0.1
1
10
0.1
1
10
-VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
Normalised RDS(on) and VGS(th)
T = 150°C
T = 25°C
0.1
-VDS = 10V
0.01
3
-VGS
4
5
1.8
1.6
RDS(on)
1.4
1.2
VGS(th)
1.0
0.8
VGS = VDS
ID = -250uA
0.6
0.4
-50
0
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance (Ω)
VGS = -10V
ID = - 0.6A
2.0
Gate-Source Voltage (V)
Normalised Curves v Temperature
10
3.5V
-VGS
100
T = 25°C
4V
4.5V
5V
10
7V
10V
1
0.01
0.1
1
-ISD Reverse Drain Current (A)
-ID Drain Current (A)
2.2
1
10
Issue 1.0 - March 2009
© Diodes Incorporated
T = 25°C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
-ID Drain Current (A)
On-Resistance v Drain Current
T = 150°C
1
Source-Drain Diode Forward Voltage
8
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ZXMHC10A07N8
P-channel typical characteristics –continued
C Capacitance (pF)
150
CISS
COSS
100
CRSS
50
0
0.1
1
10
100
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
-VGS Gate-Source Voltage (V)
10
VGS = 0V
f = 1MHz
200
ID = -0.6A
8
6
4
2
VDS = -50V
0
0
1
2
3
4
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test circuits
Current
regulator
QG
12V
VG
QGS
50k
0.2␮F
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Gate charge test circuit
Basic gate charge waveform
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
tr
td(off)
t(on)
tr
t(on)
Switching time test circuit
Switching time waveforms
Issue 1.0 - March 2009
© Diodes Incorporated
Pulse width ⬍ 1␮S
Duty factor 0.1%
td(on)
9
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ZXMHC10A07N8
Packaging details - SO8
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Max.
Max.
Min.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
θ
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
-
-
-
-
-
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
Min.
1.27 BSC
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMHC10A07N8
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS
FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems
without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use
provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support
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