PANASONIC MA2D760

Schottky Barrier Diodes (SBD)
MA2D760
Silicon epitaxial planar type
Unit : mm
For switching power supply
4.6 ± 0.2
15.0 ± 0.5
■ Features
+0
1.5 − 0.4
φ 3.2 ± 0.1
13.7 ± 0.2
4.2 ± 0.2
• TO-220D Package
•Allowing to rectify under (IF(AV) = 5 A) condition
• VR = 90 V guaranteed
• Single type
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
90
V
Average forward current
IF(AV)
5
A
Non-repetitive peak forward
surge current*
IFSM
90
A
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
2.9 ± 0.2
3.0 ± 0.5
9.9 ± 0.3
2.6 ± 0.1
1.4 ± 0.2
0.8 ± 0.1
0.55 ± 0.15
5.08 ± 0.5
2.54 ± 0.3
1
2
1 : Cathode
2 : Anode
TO-220D Package (2-pin)
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
IR
VR = 90 V
Forward voltage (DC)
VF
IF = 5 A
Thermal resistance
Rth(j-c)
Direct current (between junction and case)
Min
Typ
Max
Unit
3
mA
0.58
V
3
°C/W
Note) Rated input/output frequency: 150 kHz
1
MA2D760
Schottky Barrier Diodes (SBD)
IF  V F
10
IR  V R
102
75°C
Ta = 125°C
Ta = 125°C
25°C
10
Reverse current IR (mA)
Forward current IF (A)
1
10−1
10−2
10−3
10−4
0.2
0.4
0.6
0.8
1.0
1.2
75°C
10−1
25°C
10−2
10−3
0
Forward voltage VF (V)
2
1
0
20
40
60
80
100
Reverse voltage VR (V)
120