Schottky Barrier Diodes (SBD) MA2D760 Silicon epitaxial planar type Unit : mm For switching power supply 4.6 ± 0.2 15.0 ± 0.5 ■ Features +0 1.5 − 0.4 φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 • TO-220D Package •Allowing to rectify under (IF(AV) = 5 A) condition • VR = 90 V guaranteed • Single type ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 90 V Average forward current IF(AV) 5 A Non-repetitive peak forward surge current* IFSM 90 A Junction temperature Tj −40 to +125 °C Storage temperature Tstg −40 to +125 °C 2.9 ± 0.2 3.0 ± 0.5 9.9 ± 0.3 2.6 ± 0.1 1.4 ± 0.2 0.8 ± 0.1 0.55 ± 0.15 5.08 ± 0.5 2.54 ± 0.3 1 2 1 : Cathode 2 : Anode TO-220D Package (2-pin) Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Reverse current (DC) IR VR = 90 V Forward voltage (DC) VF IF = 5 A Thermal resistance Rth(j-c) Direct current (between junction and case) Min Typ Max Unit 3 mA 0.58 V 3 °C/W Note) Rated input/output frequency: 150 kHz 1 MA2D760 Schottky Barrier Diodes (SBD) IF V F 10 IR V R 102 75°C Ta = 125°C Ta = 125°C 25°C 10 Reverse current IR (mA) Forward current IF (A) 1 10−1 10−2 10−3 10−4 0.2 0.4 0.6 0.8 1.0 1.2 75°C 10−1 25°C 10−2 10−3 0 Forward voltage VF (V) 2 1 0 20 40 60 80 100 Reverse voltage VR (V) 120