IGW30N60TP Data Sheet (1.4 MB, EN)

IGBT
TRENCHSTOPTMPerformancetechnology
IGW30N60TP
600VIGBTTRENCHSTOPTMPerformanceseries
Datasheet
IndustrialPowerControl
IGW30N60TP
TRENCHSTOPTMPerformanceSeries
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
C
TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowturn-offlosses
•shorttailcurrent
•lowEMI
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•drives
•solarinverters
•uninterruptiblepowersupplies
•converterswithmediumswitchingfrequency
G
C
E
KeyPerformanceandPackageParameters
Type
IGW30N60TP
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
600V
30A
1.6V
175°C
G30DTP
PG-TO247-3
2
Rev.2.1,2016-02-05
IGW30N60TP
TRENCHSTOPTMPerformanceSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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IGW30N60TP
TRENCHSTOPTMPerformanceSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
600
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
53.0
38.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
ICpuls
90.0
A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs1)
-
90.0
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
200.0
100.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
µs
5
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
0.50
0.75
Unit
RthCharacteristics
IGBT thermal resistance,
junction - case
1)
Rth(j-c)
K/W
Defined by design. Not subject to production test.
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Rev.2.1,2016-02-05
IGW30N60TP
TRENCHSTOPTMPerformanceSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
600
-
-
V
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=175°C
-
1.60
1.94
1.80
-
V
Gate-emitter threshold voltage
VGE(th)
IC=0.48mA,VCE=VGE
4.1
5.1
5.7
V
Zero gate voltage collector current
ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
40
-
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=30.0A
-
26.0
-
S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
1050
-
-
45
-
-
36
-
-
130.0
-
nC
-
13.0
-
nH
-
A
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=30.0A,
VGE=15V
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
-
137
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
15
-
ns
-
21
-
ns
-
179
-
ns
-
12
-
ns
-
0.71
-
mJ
-
0.42
-
mJ
-
1.13
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=10.5Ω,RG(off)=10.5Ω,
Lσ=32nH,Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW30N60DTP) reverse
recovery.
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IGW30N60TP
TRENCHSTOPTMPerformanceSeries
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
15
-
ns
-
23
-
ns
-
220
-
ns
-
59
-
ns
-
0.99
-
mJ
-
0.74
-
mJ
-
1.73
-
mJ
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=10.5Ω,RG(off)=10.5Ω,
Lσ=32nH,Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW30N60DTP) reverse
recovery.
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IGW30N60TP
TRENCHSTOPTMPerformanceSeries
250
100
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
200
DC
10
1
150
100
50
0.1
0.1
1
10
100
0
1000
25
VCE,COLLECTOR-EMITTERVOLTAGE[V]
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
75
90
80
VGE=20V
15V
IC,COLLECTORCURRENT[A]
70
IC,COLLECTORCURRENT[A]
50
50
25
13V
60
11V
9V
50
7V
40
30
20
10
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0
1
2
3
4
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tj=25°C)
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Rev.2.1,2016-02-05
IGW30N60TP
TRENCHSTOPTMPerformanceSeries
90
60
Tj=25°C
Tj=175°C
80
VGE=20V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
15V
70
13V
60
11V
9V
50
7V
40
30
20
45
30
15
10
0
0
1
2
3
4
0
5
0
2
VCE,COLLECTOR-EMITTERVOLTAGE[V]
4
6
8
10
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tj=175°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
IC=19A
IC=38A
IC=76A
td(off)
tf
td(on)
tr
3.0
100
t,SWITCHINGTIMES[ns]
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
3.5
2.5
2.0
10
1.5
1.0
25
50
75
100
125
150
1
175
Tj,JUNCTIONTEMPERATURE[°C]
0
5
10 15 20 25 30 35 40 45 50 55 60 65
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=10.5Ω,testcircuitinFig.E)
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Rev.2.1,2016-02-05
IGW30N60TP
TRENCHSTOPTMPerformanceSeries
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
100
10
0
10
20
30
40
100
10
50
25
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=30A,testcircuitinFig.E)
100
125
150
175
5
typ.
min.
max.
Eoff
Eon
Ets
5.0
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
75
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=30A,
rG=10.5Ω,testcircuitinFig.E)
6.0
4.0
3.0
2.0
1.0
0.0
50
Tj,JUNCTIONTEMPERATURE[°C]
25
50
75
100
125
150
4
3
2
1
0
175
Tj,JUNCTIONTEMPERATURE[°C]
0
10
20
30
40
50
60
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0,48mA)
9
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=10.5Ω,testcircuitinFig.E)
Rev.2.1,2016-02-05
IGW30N60TP
TRENCHSTOPTMPerformanceSeries
4
2.0
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
Eoff
Eon
Ets
3
2
1
0
0
10
20
30
40
1.5
1.0
0.5
0.0
50
25
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=30A,testcircuitinFig.E)
75
100
125
150
175
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=400V,VGE=15/0V,IC=30A,
rG=10.5Ω,testcircuitinFig.E)
3.0
16
Eoff
Eon
Ets
120V
480V
14
2.5
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
50
Tj,JUNCTIONTEMPERATURE[°C]
2.0
1.5
1.0
12
10
8
6
4
0.5
2
0.0
300
350
400
450
500
550
0
600
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
25
50
75
100
125
150
QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=30A,
rG=10.5Ω,testcircuitinFig.E)
Figure 16. Typicalgatecharge
(IC=30A)
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Rev.2.1,2016-02-05
IGW30N60TP
TRENCHSTOPTMPerformanceSeries
C,CAPACITANCE[pF]
1000
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
250
Cies
Coes
Cres
100
10
0
10
20
200
150
100
50
0
30
12
VCE,COLLECTOR-EMITTERVOLTAGE[V]
13
14
15
16
17
18
19
20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=25°C)
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
16
14
12
10
8
6
4
2
0.1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.01
single pulse
0.001
i:
1
2
3
4
5
6
ri[K/W]: 0.01683439 0.09776416 0.1309769 0.2343649 0.02236283 1.3E-3
τi[s]:
3.1E-5
1.8E-4
1.9E-3
0.01018811 0.07263209 1.842143
0
10
11
12
13
14
1E-4
1E-6
15
VGE,GATE-EMITTERVOLTAGE[V]
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 19. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
11
Figure 20. TypicalIGBTtransientthermalimpedance
(D=tp/T)
Rev.2.1,2016-02-05
IGW30N60TP
TRENCHSTOPTMPerformanceSeries
Package Drawing PG-TO247-3
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Rev.2.1,2016-02-05
IGW30N60TP
TRENCHSTOPTMPerformanceSeries
Testing Conditions
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
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Rev.2.1,2016-02-05
IGW30N60TP
TRENCHSTOPTMPerformanceSeries
RevisionHistory
IGW30N60TP
Revision:2016-02-05,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
-
Release of final datasheet
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2016.
AllRightsReserved.
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
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theproductofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof
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completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.
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Rev.2.1,2016-02-05