IGW40N60TP Data Sheet (1.4 MB, EN)

IGBT
TRENCHSTOPTMPerformancetechnology
IGW40N60DTP
600VIGBTTRENCHSTOPTMPerformanceseries
Datasheet
IndustrialPowerControl
IGW40N60TP
TRENCHSTOPTMPerformanceSeries
600VDuoPackIGBT
TRENCHSTOPTMPerformanceseries
Features:
C
TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowturn-offlosses
•shorttailcurrent
•lowEMI
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•drives
•solarinverters
•uninterruptiblepowersupplies
•converterswithmediumswitchingfrequency
G
C
E
KeyPerformanceandPackageParameters
Type
IGW40N60TP
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
600V
40A
1.6V
175°C
G40DTP
PG-TO247-3
2
Rev.2.1,2016-02-05
IGW40N60TP
TRENCHSTOPTMPerformanceSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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IGW40N60TP
TRENCHSTOPTMPerformanceSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
600
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
67.0
48.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
ICpuls
120.0
A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs1)
-
120.0
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
246.0
123.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
µs
5
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
0.41
0.61
Unit
RthCharacteristics
IGBT thermal resistance,
junction - case
1)
Rth(j-c)
K/W
Defined by design. Not subject to production test.
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Rev.2.1,2016-02-05
IGW40N60TP
TRENCHSTOPTMPerformanceSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
600
-
-
V
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=175°C
-
1.60
1.94
1.80
-
V
Gate-emitter threshold voltage
VGE(th)
IC=0.64mA,VCE=VGE
4.1
5.1
5.7
V
Zero gate voltage collector current
ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
40
-
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=40.0A
-
40.0
-
S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
1400
-
-
60
-
-
48
-
-
177.0
-
nC
-
13.0
-
nH
-
A
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=40.0A,
VGE=15V
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
-
183
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
18
-
ns
-
30
-
ns
-
222
-
ns
-
18
-
ns
-
1.06
-
mJ
-
0.61
-
mJ
-
1.67
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=10.1Ω,RG(off)=10.1Ω,
Lσ=32nH,Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW40N60DTP) reverse
recovery.
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IGW40N60TP
TRENCHSTOPTMPerformanceSeries
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
19
-
ns
-
30
-
ns
-
273
-
ns
-
47
-
ns
-
1.63
-
mJ
-
1.05
-
mJ
-
2.68
-
mJ
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=400V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=10.1Ω,RG(off)=10.1Ω,
Lσ=32nH,Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW40N60DTP) reverse
recovery.
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Rev.2.1,2016-02-05
IGW40N60TP
TRENCHSTOPTMPerformanceSeries
300
250
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
100
DC
10
1
200
150
100
50
0.1
0.1
1
10
100
0
1000
25
VCE,COLLECTOR-EMITTERVOLTAGE[V]
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
80
110
100
60
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
50
40
20
VGE=20V
90
15V
80
13V
11V
70
9V
60
7V
50
40
30
20
10
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0
1
2
3
4
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tj=25°C)
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Rev.2.1,2016-02-05
IGW40N60TP
TRENCHSTOPTMPerformanceSeries
110
100
Tj=25°C
Tj=175°C
VGE=20V
90
15V
80
13V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
100
11V
70
9V
60
7V
50
40
30
75
50
25
20
10
0
0
1
2
3
4
0
5
0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
2
4
6
8
10
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tj=175°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
IC=24A
IC=48A
IC=96A
td(off)
tf
td(on)
tr
3.0
100
t,SWITCHINGTIMES[ns]
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
3.5
2.5
2.0
10
1.5
1.0
25
50
75
100
125
150
1
175
Tj,JUNCTIONTEMPERATURE[°C]
0
10
20
30
40
50
60
70
80
90
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=10,1Ω,testcircuitinFig.E)
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Rev.2.1,2016-02-05
IGW40N60TP
TRENCHSTOPTMPerformanceSeries
1000
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
100
10
0
5
10
15
20
25
30
35
40
td(off)
tf
td(on)
tr
100
10
45
25
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=40A,testcircuitinFig.E)
75
100
125
150
175
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=40A,
rG=10,1Ω,testcircuitinFig.E)
6.0
8
typ.
min.
max.
Eoff
Eon
Ets
7
5.0
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
50
Tj,JUNCTIONTEMPERATURE[°C]
4.0
3.0
2.0
1.0
6
5
4
3
2
1
0.0
25
50
75
100
125
150
0
175
Tj,JUNCTIONTEMPERATURE[°C]
0
10
20
30
40
50
60
70
80
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0,64mA)
9
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=10,1Ω,testcircuitinFig.E)
Rev.2.1,2016-02-05
IGW40N60TP
TRENCHSTOPTMPerformanceSeries
6
3.0
Eoff
Eon
Ets
5
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
Eoff
Eon
Ets
4
3
2
1
0
0
5
10
15
20
25
30
35
40
2.5
2.0
1.5
1.0
0.5
0.0
45
25
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=40A,testcircuitinFig.E)
75
100
125
150
175
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=400V,VGE=15/0V,IC=40A,
rG=10,1Ω,testcircuitinFig.E)
6.0
16
Eoff
Eon
Ets
120V
480V
14
5.0
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
50
Tj,JUNCTIONTEMPERATURE[°C]
4.0
3.0
2.0
12
10
8
6
4
1.0
2
0.0
300
350
400
450
500
550
0
600
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
50
100
150
200
QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=40A,
rG=10,1Ω,testcircuitinFig.E)
Figure 16. Typicalgatecharge
(IC=40A)
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Rev.2.1,2016-02-05
IGW40N60TP
TRENCHSTOPTMPerformanceSeries
C,CAPACITANCE[pF]
1000
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
350
Cies
Coes
Cres
100
10
0
10
20
300
250
200
150
100
50
0
30
12
VCE,COLLECTOR-EMITTERVOLTAGE[V]
13
14
15
16
17
18
19
20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=25°C)
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
16
14
12
10
8
6
4
2
0.1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.01
single pulse
0.001
i:
1
2
3
4
5
6
ri[K/W]: 0.01470005 0.07635961 0.09972334 0.1994667 0.0170487 1.3E-3
τi[s]:
3.4E-5
1.9E-4
2.1E-3
0.01129602 0.08484332 1.853814
0
10
11
12
13
14
1E-4
1E-6
15
VGE,GATE-EMITTERVOLTAGE[V]
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 19. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
11
Figure 20. TypicalIGBTtransientthermalimpedance
(D=tp/T)
Rev.2.1,2016-02-05
IGW40N60TP
TRENCHSTOPTMPerformanceSeries
Package Drawing PG-TO247-3
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Rev.2.1,2016-02-05
IGW40N60TP
TRENCHSTOPTMPerformanceSeries
Testing Conditions
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
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Rev.2.1,2016-02-05
IGW40N60TP
TRENCHSTOPTMPerformanceSeries
RevisionHistory
IGW40N60TP
Revision:2016-02-05,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
-
Release final datasheet
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2016.
AllRightsReserved.
ImportantNotice
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird
party.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof
theproductofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof
customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe
completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest
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pleasecontactyournearestInfineonTechnologiesoffice.
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Rev.2.1,2016-02-05