IGZ75N65H5 Data Sheet (1.9 MB, EN)

IGBT
Highspeed5IGBTinTRENCHSTOPTM5technology
IGZ75N65H5
650VIGBThighspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
IGZ75N65H5
Highspeedseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
HighspeedH5technologyoffering
•UltralowlossswitchingthankstoKelvinemitterpinin
combinationwithTRENCHSTOPTM5
•Best-in-classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
•Solarstringinverters
Packagepindefinition:
•PinC&backside-collector
•PinE-emitter
•PinK-Kelvinemitter
•PinG-gate
Pleasenote:TheemitterandKelvinemitterpinsarenot
exchangeable.Theirexchangemightleadtomalfunction.
KeyPerformanceandPackageParameters
Type
IGZ75N65H5
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
75A
1.65V
175°C
G75EH5
PG-TO247-4
2
Rev.2.1,2014-10-31
IGZ75N65H5
Highspeedseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
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Rev.2.1,2014-10-31
IGZ75N65H5
Highspeedseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
119.0
75.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
ICpuls
300.0
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs1)
-
300.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
395.0
197.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.38
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
650
-
-
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=75.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
-
1.65
1.82
1.90
2.10
-
Gate-emitter threshold voltage
VGE(th)
IC=0.75mA,VCE=VGE
3.2
4.0
4.8
V
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
850.0
75.0
-
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=75.0A
-
104.0
-
S
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
1)
V
V
Defined by design. Not subject to production test.
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Rev.2.1,2014-10-31
IGZ75N65H5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
4300
-
-
75
-
-
16
-
-
166.0
-
nC
-
13.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=75.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
26
-
ns
-
11
-
ns
-
347
-
ns
-
15
-
ns
-
0.68
-
mJ
-
0.43
-
mJ
-
1.11
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=37.5A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=18.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ75N65EH5.
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
24
-
ns
-
13
-
ns
-
400
-
ns
-
15
-
ns
-
1.10
-
mJ
-
0.48
-
mJ
-
1.58
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
Tvj=150°C,
VCC=400V,IC=37.5A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=18.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ75N65EH5.
The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
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Rev.2.1,2014-10-31
IGZ75N65H5
Highspeedseriesfifthgeneration
400
350
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
100
10
1
300
250
200
150
100
50
not for linear use
0.1
1
10
100
0
1000
25
50
VCE,COLLECTOR-EMITTERVOLTAGE[V]
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs,
ICmaxdefinedbydesign-notsubjectto
production test)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
120
300
VGE = 19V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
100
80
60
40
270
18V
240
15V
14V
210
11V
180
9V
8V
150
7V
120
5V
90
60
20
30
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
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Rev.2.1,2014-10-31
IGZ75N65H5
Highspeedseriesfifthgeneration
300
300
270
17V
270
240
15V
240
11V
210
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
VGE=19V
9V
180
8V
150
120
90
210
180
150
120
90
60
60
30
30
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
Tvj = 25°C
Tvj = 175°C
3
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=175°C)
5
6
7
8
9
10
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
2.50
1000
IC = 20A
IC = 37.5A
IC = 75A
2.25
2.00
t,SWITCHINGTIMES[ns]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
4
VGE,GATE-EMITTERVOLTAGE[V]
1.75
1.50
1.25
100
10
1.00
td(off)
tf
td(on)
tr
0.75
0.50
25
50
75
100
125
150
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100 125 150 175 200 225
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=10Ω,RG(off)=18Ω,dynamic
test circuit in Figure E)
7
Rev.2.1,2014-10-31
IGZ75N65H5
Highspeedseriesfifthgeneration
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
1000
100
10
100
10
td(off)
tf
td(on)
tr
1
0
10
20
30
40
1
50
25
RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=37.5A,dynamictestcircuitin
Figure E)
100
125
150
175
9
typ.
min.
max.
5.5
Eoff
Eon
Ets
8
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
75
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=37.5A,RG(on)=10Ω,RG(off)=18Ω,dynamic
test circuit in Figure E)
6.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
7
6
5
4
3
2
1
1.5
1.0
50
Tvj,JUNCTIONTEMPERATURE[°C]
25
50
75
100
125
0
150
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100 125 150 175 200 225
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.75mA)
8
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=10Ω,RG(off)=18Ω,
dynamic test circuit in Figure E)
Rev.2.1,2014-10-31
IGZ75N65H5
Highspeedseriesfifthgeneration
3.5
1.8
Eoff
Eon
Ets
1.6
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
20
30
40
0.0
50
25
RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=37.5A,dynamictestcircuitin
Figure E)
125
150
175
VCE = 130V
VCE = 520V
14
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
100
16
Eoff
Eon
Ets
1.25
1.00
0.75
0.50
0.25
0.00
200
75
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=37.5A,RG(on)=10Ω,RG(off)=18Ω,dynamic
test circuit in Figure E)
1.75
1.50
50
Tvj,JUNCTIONTEMPERATURE[°C]
12
10
8
6
4
2
250
300
350
0
400
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=37.5A,RG(on)=10Ω,RG(off)=18Ω,dynamic
test circuit in Figure E)
0
20
40
60
80
100 120 140 160 180
QG,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=75A)
9
Rev.2.1,2014-10-31
IGZ75N65H5
Highspeedseriesfifthgeneration
C,CAPACITANCE[pF]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
Cies
Coes
Cres
1E+4
1000
100
10
0
5
10
15
20
25
D = 0.5
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
6
ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3
τi[s]:
2.8E-5
2.3E-4
2.3E-3
0.013145 0.113481 1.869237
0.001
1E-6
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0.2
1E-5
1E-4
0.001
0.01
0.1
tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
10
Rev.2.1,2014-10-31
IGZ75N65H5
Highspeedseriesfifthgeneration
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Rev.2.1,2014-10-31
IGZ75N65H5
Highspeedseriesfifthgeneration
vGE(t)
90% VGE
a
a
10% VGE
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
parasitic
relief
on
=
VCE x IC x dt
2% VCE
t3
t2
t3
t4
t
12
Rev.2.1,2014-10-31
IGZ75N65H5
High speed series fifth generation
Revision History
IGZ75N65H5
Revision: 2014-10-31, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2014-10-17
Preliminary data sheet
2.1
2014-10-31
Final data sheet
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
13
Rev. 2.1, 2014-10-31