IGW75N65H5 Data Sheet (1.8 MB, EN)

IGBT
Highspeed5IGBTinTRENCHSTOPTM5technology
IGW75N65H5
650VIGBThighspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
IGW75N65H5
Highspeedseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
C
HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowQG
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•Uninterruptiblepowersupplies
•Solarconverters
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
Packagepindefinition:
1
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
2
3
KeyPerformanceandPackageParameters
Type
IGW75N65H5
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
75A
1.65V
175°C
G75EH5
PG-TO247-3
2
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IC
120.0
75.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
ICpuls
300.0
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs1)
-
300.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
395.0
198.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.38
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
650
-
-
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=75.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.65
1.85
1.95
2.10
-
Gate-emitter threshold voltage
VGE(th)
IC=0.75mA,VCE=VGE
3.2
4.0
4.8
V
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
0.2
800.0
75.0
-
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=75.0A
-
104.0
-
S
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
1)
V
V
Defined by design. Not subject to production test.
4
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
3800
-
-
80
-
-
17
-
-
160.0
-
nC
-
13.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=75.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=25°C,
VCC=400V,IC=75.0A,
VGE=0.0/15.0V,
RG(on)=8.0Ω,RG(off)=8.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKW75N65EH5.
-
28
-
ns
-
33
-
ns
-
174
-
ns
-
41
-
ns
-
2.25
-
mJ
-
0.95
-
mJ
-
3.20
-
mJ
Tvj=25°C,
VCC=400V,IC=37.5A,
VGE=0.0/15.0V,
RG(on)=8.0Ω,RG(off)=8.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKW75N65EH5.
-
25
-
ns
-
14
-
ns
-
178
-
ns
-
18
-
ns
-
0.90
-
mJ
-
0.30
-
mJ
-
1.20
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
5
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=150°C,
VCC=400V,IC=75.0A,
VGE=0.0/15.0V,
RG(on)=8.0Ω,RG(off)=8.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKW75N65EH5.
-
27
-
ns
-
34
-
ns
-
194
-
ns
-
38
-
ns
-
3.00
-
mJ
-
1.00
-
mJ
-
4.00
-
mJ
Tvj=150°C,
VCC=400V,IC=37.5A,
VGE=0.0/15.0V,
RG(on)=8.0Ω,RG(off)=8.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKW75N65EH5.
-
25
-
ns
-
16
-
ns
-
207
-
ns
-
14
-
ns
-
1.80
-
mJ
-
0.40
-
mJ
-
2.20
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
6
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
400
350
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
100
10
1
300
250
200
150
100
50
not for linear use
0.1
1
10
100
0
1000
25
50
VCE,COLLECTOR-EMITTERVOLTAGE[V]
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs,
ICmaxdefinedbydesign-notsubjectto
production test)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
120
300
VGE = 20V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
100
80
60
40
270
18V
240
15V
12V
210
10V
180
8V
7V
150
6V
120
4V
90
60
20
30
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
7
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
300
300
270
17V
270
240
15V
240
12V
210
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
VGE = 19V
10V
180
7V
7V
150
6V
120
5V
90
210
180
150
120
90
60
60
30
30
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
Tvj = 25°C
Tvj = 150°C
3
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
5
6
7
8
9
10
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
3.5
1000
IC = 37.5A
IC = 75A
IC = 150A
3.0
t,SWITCHINGTIMES[ns]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
4
VGE,GATE-EMITTERVOLTAGE[V]
2.5
2.0
1.5
100
10
1.0
0.5
td(off)
tf
td(on)
tr
25
50
75
100
125
150
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100 125 150 175 200 225
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=8Ω,RG(off)=8Ω,dynamic
test circuit in Figure E)
8
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
1000
100
100
10
td(off)
tf
td(on)
tr
10
5
15
25
35
45
55
65
75
1
85
25
RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=75A,dynamictestcircuitin
Figure E)
100
125
150
175
20
typ.
min.
max.
5.5
Eoff
Eon
Ets
18
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
75
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest
circuit in Figure E)
6.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
Tvj,JUNCTIONTEMPERATURE[°C]
16
14
12
10
8
6
4
2
25
50
75
100
125
0
150
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100 125 150 175 200 225
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.75mA)
9
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=8Ω,RG(off)=8Ω,dynamic
test circuit in Figure E)
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
15
5.0
Eoff
Eon
Ets
14
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
13
12
11
10
9
8
7
6
5
4
3
2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
0
Eoff
Eon
Ets
4.5
5
15
25
35
45
55
65
75
0.0
85
25
RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=75A,dynamictestcircuitin
Figure E)
100
125
150
175
16
Eoff
Eon
Ets
VCE = 130V
VCE = 520V
14
4.5
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
75
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest
circuit in Figure E)
5.5
5.0
50
Tvj,JUNCTIONTEMPERATURE[°C]
4.0
3.5
3.0
2.5
2.0
1.5
12
10
8
6
4
1.0
2
0.5
0.0
200
250
300
350
400
450
0
500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest
circuit in Figure E)
0
20
40
60
80
100 120 140 160 180
QG,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=75A)
10
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
C,CAPACITANCE[pF]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
Cies
Coes
Cres
1E+4
1000
100
10
0
5
10
15
20
25
D = 0.5
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
6
ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3
τi[s]:
2.8E-5
2.3E-4
2.3E-3
0.013145 0.113481 1.869237
0.001
1E-6
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0.2
1E-5
1E-4
0.001
0.01
0.1
tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
11
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
Package Drawing PG-TO247-3
12
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
Testing Conditions
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
13
Rev.2.1,2015-05-20
IGW75N65H5
Highspeedseriesfifthgeneration
RevisionHistory
IGW75N65H5
Revision:2015-05-20,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2015-05-20
Final data sheet
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InfineonTechnologiesAG
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81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.
14
Rev.2.1,2015-05-20