IGZ50N65H5 Data Sheet (1.9 MB, EN)

IGBT
Highspeed5IGBTinTRENCHSTOPTM5technology
IGZ50N65H5
650VIGBThighspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
IGZ50N65H5
Highspeedseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
HighspeedH5technologyoffering
•UltralowlossswitchingthankstoKelvinemitterpinin
combinationwithTRENCHSTOPTM5
•Best-in-classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
•Solarstringinverters
Packagepindefinition:
•PinC&backside-collector
•PinE-emitter
•PinK-Kelvinemitter
•PinG-gate
Pleasenote:TheemitterandKelvinemitterpinsarenot
exchangeable.Theirexchangemightleadtomalfunction.
KeyPerformanceandPackageParameters
Type
IGZ50N65H5
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
50A
1.65V
175°C
G50EH5
PG-TO247-4
2
Rev.2.1,2014-10-31
IGZ50N65H5
Highspeedseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
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Rev.2.1,2014-10-31
IGZ50N65H5
Highspeedseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
85.0
54.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
ICpuls
200.0
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs1)
-
200.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
273.0
136.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.55
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
650
-
-
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
-
1.65
1.82
1.90
2.10
-
Gate-emitter threshold voltage
VGE(th)
IC=0.50mA,VCE=VGE
3.2
4.0
4.8
V
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
680.0
50.0
-
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=50.0A
-
65.0
-
S
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
1)
V
V
Defined by design. Not subject to production test.
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Rev.2.1,2014-10-31
IGZ50N65H5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
3100
-
-
53
-
-
11
-
-
109.0
-
nC
-
13.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=50.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
20
-
ns
-
7
-
ns
-
250
-
ns
-
21
-
ns
-
0.41
-
mJ
-
0.19
-
mJ
-
0.60
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=20.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ50N65EH5.
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
19
-
ns
-
8
-
ns
-
292
-
ns
-
19
-
ns
-
0.67
-
mJ
-
0.27
-
mJ
-
0.94
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
Tvj=150°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=20.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ50N65EH5.
The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
5
Rev.2.1,2014-10-31
IGZ50N65H5
Highspeedseriesfifthgeneration
275
250
100
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
225
10
1
200
175
150
125
100
75
50
25
not for linear use
0.1
1
10
100
0
1000
25
50
VCE,COLLECTOR-EMITTERVOLTAGE[V]
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs,
ICmaxdefinedbydesign-notsubjectto
production test)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
90
150
VGE=20V
80
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
70
60
50
40
30
20
18V
120
15V
12V
105
10V
90
8V
7V
75
6V
60
5V
45
30
10
0
135
15
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
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Rev.2.1,2014-10-31
IGZ50N65H5
Highspeedseriesfifthgeneration
150
150
135
18V
135
120
15V
120
12V
105
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
VGE=20V
10V
90
8V
7V
75
6V
60
5V
45
105
90
75
60
45
30
30
15
15
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
Tvj = 25°C
Tvj = 175°C
2
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=175°C)
4
5
6
7
8
9
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
2.50
1000
IC = 12.5A
IC = 25A
IC = 50A
2.25
td(off)
tf
td(on)
tr
2.00
t,SWITCHINGTIMES[ns]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
3
VGE,GATE-EMITTERVOLTAGE[V]
1.75
1.50
1.25
100
10
1.00
0.75
0.50
25
50
75
100
125
150
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100
125
150
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=12Ω,RG(off)=20Ω,dynamic
test circuit in Figure E)
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Rev.2.1,2014-10-31
IGZ50N65H5
Highspeedseriesfifthgeneration
1E+4
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
1000
100
100
10
10
1
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
1
25.0
25
RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=25A,dynamictestcircuitin
Figure E)
100
125
150
175
5.5
typ.
min.
max.
5.5
Eoff
Eon
Ets
5.0
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
75
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=20Ω,dynamic
test circuit in Figure E)
6.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
Tvj,JUNCTIONTEMPERATURE[°C]
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
25
50
75
100
125
0.0
150
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100
125
150
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
8
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=12Ω,RG(off)=20Ω,
dynamic test circuit in Figure E)
Rev.2.1,2014-10-31
IGZ50N65H5
Highspeedseriesfifthgeneration
1.4
1.0
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
1.2
Eoff
Eon
Ets
0.9
1.0
0.8
0.6
0.4
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.2
0.1
0.0
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
0.0
25.0
25
RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=25A,dynamictestcircuitin
Figure E)
75
100
125
150
175
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=20Ω,dynamic
test circuit in Figure E)
1.0
16
Eoff
Eon
Ets
VCE = 130V
VCE = 520V
14
0.8
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
50
Tvj,JUNCTIONTEMPERATURE[°C]
0.6
0.4
0.2
12
10
8
6
4
2
0.0
200
250
300
350
0
400
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=20Ω,dynamic
test circuit in Figure E)
0
20
40
60
80
100
120
QG,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=50A)
9
Rev.2.1,2014-10-31
IGZ50N65H5
Highspeedseriesfifthgeneration
C,CAPACITANCE[pF]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
Cies
Coes
Cres
1E+4
1000
100
10
1
0
5
10
15
20
25
D = 0.5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
6
ri[K/W]: 9.5E-3 0.125039 0.132857 0.256654 0.021551 2.1E-3
τi[s]:
2.5E-5 2.3E-4
2.1E-3
0.012197 0.104256 1.840158
0.001
1E-7
30
0.2
0.1
1E-6
1E-5
1E-4
0.001
0.01
0.1
tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
10
Rev.2.1,2014-10-31
IGZ50N65H5
Highspeedseriesfifthgeneration
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Rev.2.1,2014-10-31
IGZ50N65H5
Highspeedseriesfifthgeneration
vGE(t)
90% VGE
a
a
10% VGE
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
parasitic
relief
on
=
VCE x IC x dt
2% VCE
t3
t2
t3
t4
t
12
Rev.2.1,2014-10-31
IGZ50N65H5
High speed series fifth generation
Revision History
IGZ50N65H5
Revision: 2014-10-31, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2014-10-17
Preliminary data sheet
2.1
2014-10-31
Final data sheet
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
13
Rev. 2.1, 2014-10-31