IGBT Highspeed5IGBTinTRENCHSTOPTM5technology IGZ50N65H5 650VIGBThighspeedseriesfifthgeneration Datasheet IndustrialPowerControl IGZ50N65H5 Highspeedseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedH5technologyoffering •UltralowlossswitchingthankstoKelvinemitterpinin combinationwithTRENCHSTOPTM5 •Best-in-classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters •Solarstringinverters Packagepindefinition: •PinC&backside-collector •PinE-emitter •PinK-Kelvinemitter •PinG-gate Pleasenote:TheemitterandKelvinemitterpinsarenot exchangeable.Theirexchangemightleadtomalfunction. KeyPerformanceandPackageParameters Type IGZ50N65H5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 50A 1.65V 175°C G50EH5 PG-TO247-4 2 Rev.2.1,2014-10-31 IGZ50N65H5 Highspeedseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 3 Rev.2.1,2014-10-31 IGZ50N65H5 Highspeedseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 85.0 54.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 200.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1) - 200.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 273.0 136.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.55 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=50.0A Tvj=25°C Tvj=100°C Tvj=150°C - 1.65 1.82 1.90 2.10 - Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - 680.0 50.0 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 65.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 1) V V Defined by design. Not subject to production test. 4 Rev.2.1,2014-10-31 IGZ50N65H5 Highspeedseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 3100 - - 53 - - 11 - - 109.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance1) measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=50.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 20 - ns - 7 - ns - 250 - ns - 21 - ns - 0.41 - mJ - 0.19 - mJ - 0.60 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=20.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode from IKZ50N65EH5. SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 19 - ns - 8 - ns - 292 - ns - 19 - ns - 0.67 - mJ - 0.27 - mJ - 0.94 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) Tvj=150°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=20.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode from IKZ50N65EH5. The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin. 5 Rev.2.1,2014-10-31 IGZ50N65H5 Highspeedseriesfifthgeneration 275 250 100 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 225 10 1 200 175 150 125 100 75 50 25 not for linear use 0.1 1 10 100 0 1000 25 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs, ICmaxdefinedbydesign-notsubjectto production test) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 90 150 VGE=20V 80 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 70 60 50 40 30 20 18V 120 15V 12V 105 10V 90 8V 7V 75 6V 60 5V 45 30 10 0 135 15 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 6 Rev.2.1,2014-10-31 IGZ50N65H5 Highspeedseriesfifthgeneration 150 150 135 18V 135 120 15V 120 12V 105 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] VGE=20V 10V 90 8V 7V 75 6V 60 5V 45 105 90 75 60 45 30 30 15 15 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 Tvj = 25°C Tvj = 175°C 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175°C) 4 5 6 7 8 9 Figure 6. Typicaltransfercharacteristic (VCE=20V) 2.50 1000 IC = 12.5A IC = 25A IC = 50A 2.25 td(off) tf td(on) tr 2.00 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 3 VGE,GATE-EMITTERVOLTAGE[V] 1.75 1.50 1.25 100 10 1.00 0.75 0.50 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=12Ω,RG(off)=20Ω,dynamic test circuit in Figure E) 7 Rev.2.1,2014-10-31 IGZ50N65H5 Highspeedseriesfifthgeneration 1E+4 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 100 10 10 1 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 1 25.0 25 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=25A,dynamictestcircuitin Figure E) 100 125 150 175 5.5 typ. min. max. 5.5 Eoff Eon Ets 5.0 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=25A,RG(on)=12Ω,RG(off)=20Ω,dynamic test circuit in Figure E) 6.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 0.0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.5mA) 8 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=12Ω,RG(off)=20Ω, dynamic test circuit in Figure E) Rev.2.1,2014-10-31 IGZ50N65H5 Highspeedseriesfifthgeneration 1.4 1.0 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.2 Eoff Eon Ets 0.9 1.0 0.8 0.6 0.4 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.2 0.1 0.0 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 0.0 25.0 25 RG,GATERESISTANCE[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=25A,dynamictestcircuitin Figure E) 75 100 125 150 175 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=25A,RG(on)=12Ω,RG(off)=20Ω,dynamic test circuit in Figure E) 1.0 16 Eoff Eon Ets VCE = 130V VCE = 520V 14 0.8 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 50 Tvj,JUNCTIONTEMPERATURE[°C] 0.6 0.4 0.2 12 10 8 6 4 2 0.0 200 250 300 350 0 400 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=25A,RG(on)=12Ω,RG(off)=20Ω,dynamic test circuit in Figure E) 0 20 40 60 80 100 120 QG,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=50A) 9 Rev.2.1,2014-10-31 IGZ50N65H5 Highspeedseriesfifthgeneration C,CAPACITANCE[pF] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Cies Coes Cres 1E+4 1000 100 10 1 0 5 10 15 20 25 D = 0.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 9.5E-3 0.125039 0.132857 0.256654 0.021551 2.1E-3 τi[s]: 2.5E-5 2.3E-4 2.1E-3 0.012197 0.104256 1.840158 0.001 1E-7 30 0.2 0.1 1E-6 1E-5 1E-4 0.001 0.01 0.1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalimpedance (D=tp/T) 10 Rev.2.1,2014-10-31 IGZ50N65H5 Highspeedseriesfifthgeneration 89:;<=>?:> 5 5 10 3 3 3 3 2 2 7 6 01221034356 $'( $%& 987 8"! 789 787 78 8 8!! 8# 8# 8 8# 89 7 8 78" #89 879 8!9 89 8! 98# 89 !8 98 !8" 78 8 789 98" 78!7 8#7 8 87 !8# !89 #8 #8 8 98 8! 8 6 $%& 8 8 8#9 8 7 8 ! 87 8" 8 8!# 8 " 89 8 9 8! 1)*36 $'( 879 8 8"9 897 8# 87" 8"! 89 89! 8!9 899# 87 87 8 87 8" 8## 8#! 89" 8 8!" 87# 87 87! 87 87 " 87!" 11 ,)+034.,3 4" " 7 6)23 99 #8900 3+5,-3.-5,/3)41, 166+3.43 72 27 ! 531161, Rev.2.1,2014-10-31 IGZ50N65H5 Highspeedseriesfifthgeneration vGE(t) 90% VGE a a 10% VGE b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) CC 2% IC t vCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 parasitic relief on = VCE x IC x dt 2% VCE t3 t2 t3 t4 t 12 Rev.2.1,2014-10-31 IGZ50N65H5 High speed series fifth generation Revision History IGZ50N65H5 Revision: 2014-10-31, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2014-10-17 Preliminary data sheet 2.1 2014-10-31 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 Rev. 2.1, 2014-10-31