Power MOSFETs 2SK3269 N-channel enhancement mode MOSFET ■ Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 0.8±0.1 2.5±0.2 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C (10.2) (8.9) Symbol Rating Unit Drain-source surrender voltage VDSS 100 V Gate-source surrender voltage VGSS ±20 V Drain current ID ±25 A Peak drain current IDP ±100 A EAS 22.5 mJ 40 W Avalanche energy capability * Power dissipation PD Ta = 25°C 2 3 (2.1) 1 (6.4) (1.4) Parameter 1.5±0.3 • Low on-resistance, low Qg • High avalanche resistance 1: Gate 2: Drain 3: Source TO-220C-G1 Package Marking Symbol: K3269 1.4 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Internal Connection D Note) *: L = 0.2 mH, IL = 15 A, 1 pulse G S ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Drain-source surrender voltage Symbol VDSS Conditions Min ID = 1 mA, VGS = 0 100 2.0 Gate threshold voltage Vth VDS = 10 V, ID = 1 mA Drain-source cutoff current IDSS VDS = 80 V, VGS = 0 Gate-source cutoff current IGSS VGS = ±20 V, VDS = 0 Drain-source ON resistance RDS(on) VGS = 10 V, ID = 12 A Forward transfer admittance Yfs VDS = 10 V, ID = 12 A Typ Unit V 70 4.0 V 10 µA ±1 µA 100 mΩ 11 S 960 pF Coss 285 pF Reverse transfer capacitance (Common-source) Crss 85 pF Turn-on delay time td(on) VDD = 30 V, ID = 12 A 15 ns Tr RL = 2.5 Ω, VGS = 10 V Short-circuit forward transfer capacitance (Common-source) Ciss Short-circuit output capacitance (Common-source) Rise time Turn-off delay time Fall time Publication date: March 2004 VDS = 10 V, VGS = 0, f = 1 MHz 6 Max 10 ns td(off) 65 ns tf 35 ns SJG00032AED 1 2SK3269 ■ Electrical Characteristics (continued) TC = 25°C ± 3°C Parameter Symbol Diode foward voltage Conditions Min IDR = 15 A, VGS = 0 VDSF Typ Max Unit 1.4 V Thermal resistance (ch-c) Rth(ch-c) 3.125 °C/W Thermal resistance (ch-a) Rth(ch-a) 89.3 °C/W Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. PD Ta Safe operation area 1 000 60 Non repetitive pulse TC = 25°C (1) TC = Ta (2) Without heat sink: PD = 1.4 W Drain current ID (A) IDP t = 100 µs ID t= 1 ms t= 10 ms 10 1 RDS(on) / RDS(on) Limited t= 100 ms DC Power dissipation PD (W) 50 100 40 (1) 30 20 10 (2) 10−1 0.1 1 10 Drain-source voltage VDS (V) 2 100 0 0 25 50 75 100 125 Ambient temperature Ta (°C) SJG00032AED 150 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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