Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 2.5±0.1 6.9±0.1 (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 ● High-speed switching ● M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (1.0) (0.4) ■ Features (1.0) (1.5) (0.85) 0.45±0.05 1.25±0.05 0.55±0.1 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Ratings 50 8 ±100 ±200 400 150 −55 to +150 Symbol VDSS VGSO ID IDP PD Tch Tstg Unit V V mA mA mW °C °C 1 (2.5) 2 3 1: Source 2: Drain 3: Gate EIAJ: SC-71 M-A1 Package (2.5) Internal Connection D G S ■ Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz min typ 50 1.5 3.5 50 20 15 6 1.2 VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω max 10 50 10 20 Unit µA µA V V Ω mS pF pF pF ns ns ton, toff measurement circuit Vout VGS = 5V 50Ω 200Ω 100µF * Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* 90% 10% Vin VDD = 5V Vout 10% 90% ton toff Note) The part number in the parenthesis shows conventional part number. 1 Silicon MOS FETs (Small Signal) 2SK0657 PD Ta ID VDS 120 60 0.6 100 Drain current ID (mA) 0.5 0.4 0.3 0.2 VGS=6.0V 5.5V 80 5.0V 60 4.5V 40 4.0V 3.5V 20 0.1 0 3.0V 2.5V 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 6 4 Coss Crss 3 10 100 VIN IO 100 VO=5V Ta=25˚C 30 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 10 0 2 100 Ta=–25˚C 80 25˚C 75˚C 60 40 100 0 2 4 6 4 6 8 10 12 Gate to source voltage VGS (V) RDS(on) VGS 0 30 20 0 20 2 0 30 12 VDS=5V Ta=25˚C Drain current ID (mA) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 8 Drain to source voltage VDS (V) Input voltage VIN (V) 10 40 ID VGS Ciss 1 2 8 120 VGS=0 f=1MHz Ta=25˚C 10 6 VDS=5V Ta=25˚C 50 Drain to source voltage VDS (V) Ciss, Coss, Crss VDS 12 4 8 10 12 Gate to source voltage VGS (V) Drain to source ON-resistance RDS(on) (Ω) Allowable power dissipation PD (W) Ta=25˚C Forward transfer admittance |Yfs| (mS) 0.7 | Yfs | VGS 120 ID=20mA 100 80 60 Ta=75˚C 40 25˚C –25˚C 20 0 0 2 4 6 8 10 12 Gate to source voltage VGS (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL