PD - 95428A
IRG4BC40UPbF
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
UltraFast: optimized for high operating
frequencies 8-40 KHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
Lead-Free
VCES = 600V
VCE(on) typ. = 1.72V
G
@VGE = 15V, IC = 20A
E
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
I C @ TC = 25°C
I C @ TC = 100°C
ICM
ILM
VGE
EARV
P D @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
40
20
160
160
±20
15
160
65
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
Max.
---------------------
-----0.50
-----2 (0.07)
0.77
-----80
------
Units
°C/W
g (oz)
1
02/18/10
IRG4BC40UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
Min.
600
18
------------VGE(th)
Gate Threshold Voltage
3.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe
Forward Transconductance
11
---ICES
Zero Gate Voltage Collector Current
------IGES
Gate-to-Emitter Leakage Current
---V (BR)CES
V (BR)ECS
Typ.
------0.63
1.72
2.15
1.7
----13
18
-------------
Max. Units
Conditions
---V
V GE = 0V, IC = 250µA
---V
V GE = 0V, IC = 1.0A
See Fig. 2, 5
---- V/°C V GE = 0V, IC = 1.0mA
2.1
I C = 20A
VGE = 15V
---V
I C = 40A
---I C = 20A, TJ = 150°C
6.0
V CE = V GE, IC = 250µA
---- mV/°C V CE = V GE, IC = 250µA
---S
V CE = 100V, IC = 20A
250
V GE = 0V, VCE = 600V
2.0
µA
V GE = 0V, VCE = 10V, TJ = 25°C
2500
V GE = 0V, VCE = 600V, TJ = 150°C
±100 n A
V GE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
----------------------------------------------------------
Typ.
100
16
40
34
19
110
120
0.32
0.35
0.67
30
19
220
160
1.4
7.5
2100
140
34
Max. Units
Conditions
150
I C = 20A
25
nC V CC = 400V
See Fig. 8
60
V GE = 15V
---TJ = 25°C
---ns
I C = 20A, VCC = 480V
175
V GE = 15V, RG = 10Ω
180
Energy losses include "tail"
------mJ
See Fig. 10, 11, 13, 14
1.0
---TJ = 150°C,
---ns
I C = 20A, VCC = 480V
---V GE = 15V, RG = 10Ω
---Energy losses include "tail"
---mJ
See Fig. 13, 14
---nH Measured 5mm from package
---V GE = 0V
---pF
V CC = 30V
See Fig. 7
--- = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
(see fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC40UPbF
60
For both:
Triangular wave:
Duty cycle: 50%
T J = 125°C
T sink = 90°C
Gate drive as specified
50
I
Clamp voltage:
80% of rated
Load Current ( A )
Power Dissipation = 28W
40
Square wave:
30
60% of rated
voltage
20
I
10
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
1000
100
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
1000
TJ = 25°C
TJ = 150°C
10
VGE = 15V
20µs PULSE WIDTH A
1
0.1
1
10
100
TJ = 150°C
TJ = 25°C
10
VCC = 10V
5µs PULSE WIDTH A
1
4
6
8
10
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
TC = 25°C
Fig. 3 - Typical Transfer Characteristics
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12
3
IRG4BC40UPbF
2.5
V GE = 15V
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
40
30
20
10
A
0
25
50
75
100
125
VGE = 15V
80µs PULSE WIDTH
I C = 40A
2.0
IC = 20A
1.5
I C = 10A
A
1.0
-60
150
TC , Case Temperature (°C)
-40
-20
0
20
40
60
80
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
0.02
t
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1 2
0.01
0.01
0.00001
1
t2
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC40UPbF
20
Cies
3000
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
4000
2000
Coes
Cres
1000
1
10
16
12
8
4
A
0
A
0
VCE = 400V
I C = 20A
0
100
20
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.0
10
= 480V
= 15V
= 25°C
= 20A
0.9
0.8
0.7
A
0.6
0
10
20
30
40
50
60
R G , Gate Resistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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80
100
120
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC
VGE
TJ
IC
60
Qg , Total Gate Charge (nC)
VCE, Collector-to-Emitter Voltage (V)
1.1
40
RG = 10Ω
VGE = 15V
VCC = 480V
I C = 40A
I C = 20A
1
I C = 10A
A
0.1
-60
-40
-20
0
20
40
60
80
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC40UPbF
RG
TJ
VCC
VGE
1000
= 10Ω
= 150°C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
4.0
3.0
2.0
1.0
A
0.0
0
10
20
30
40
I C , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
50
VGE
= 20V
GE
TJ = 125°C
100
SAFE OPERATING AREA
10
1
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC40UPbF
RL = VCC
ICM
L
D.U.T.
VC *
50V
0 - VCC
1000V
c
480µF
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Pulsed Collector Current
Test Circuit
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Current Test Circuit
Load Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRG4BC40UPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(&
Note: "P" in assembly line
position indicates "Lead-Free"
,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(
3$57180%(5
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2010
8
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