Powerful solutions for DC/DC conversion For DC/DC conversion, NXP offers a wide range of solutions that simplify design, improve performance, and lower the overall cost. From fast-switching MOSFETs to highly integrated power trains, we pack more power into a smaller space while keeping things cool. We design for all kinds of applications – from mobile communications and high-end servers to domestic and automotive applications – with special emphasis on high-density applications like half-bridge and forward-topology DC/DC convters. To improve power density, we specialize in small-footprint packages with superb thermal properties. Our LFPAK and nanoPAK options increase supply efficiency and improve heat dissipation, bringing thermally superior operation to the TSOP6 and SO8 footprint. That means smaller, more efficient designs or improved performance in the same space. DC/DC conversion and SMPS applications Synchronous rectification in secondary-side circuits NXP 100-V, in-rush SiliconMAX MOSFETs Ñ The latest TrenchMOS technology Ñ Fast switching Ñ Lowest possible on-state resistance at each voltage rating NXP 30-V, N-channel SwitchMOS MOSFETs Ñ High-speed, low-loss switching for power-efficient designs Ñ Choice of specifications for optimized performance Ñ Logic-level switching for simpler drive circuitry Part number VDS (V) Max RDS(ON) (mΩ) Package Part number VDS (V) Max RDS(ON) (mΩ) QGD (nC) Package PSMN015-110B 100 15 D PAK PH3330L 30 3.3 4.6 LFPAK PSMN015-100B 100 15 TO220 PH8030L 30 5.9 2.0 LFPAK PSMN009-100B 100 8.8 D2PAK PHK31NQ03LT 30 4.5 7.4 SO8 PSMN009-100P 100 8.8 TO220 PHK18NQ03LT 30 8.7 2.7 SO8 2 PRIMARY SIDE SECONDARY SIDE sync MOSFETs In-Rush MOSFET BISS SINGLE OR MULTIPHASE PWM FET DRIVER = Drivers + FETs + Non-overlap + Sleep Mode Shutdown BISS functions Primary-side switching NXP BISS bipolar drivers Ñ Low collector-emitter saturation voltage Ñ E xceptionally low power consumption Ñ Reduced heat generation Ñ Small footprint Ñ Range of applications - Handheld and battery-operated systems -D omestic and automotive applications, where low heat dissipation is often critical NXP 100-to-200-V SwitchMOS MOSFETs Ñ L atest TrenchMOS technology for superior operation in medium-voltage applications Ñ Low RDS(ON) and fast switching for cooler running, low power low, and high efficiency Ñ Small footprint with low profile, for compact designs PIP2xx Part number VDS (V) Max R DS(ON) (mΩ) QGD (nC) Package PH20100S 100 23 9 LFPAK PHK12NQ10T 100 28 9 SO8 PHK5NQ15T 150 75 12 SO8 PSMN062-150L 150 62 8.4 LFPAK Part number Polarity VCEO (V) Max I C (A) Package PBSS4320T NPN 20 5 SOT23 PHK4NQ20T 200 130 8.7 SO8 PBSS5320T PNP 20 3 TSOP6 PSMN109-200L 200 109 11.6 LFPAK PBSS4140S NPN 40 2 SOT54 PML260SN 200 294 5.3 nanoPAK PBSS5140S PNP 40 2 SOT54 PML340SN 220 367 4 nanoPAK Dedicated OR-ing NXP OR-ing intelligent switch PIP401 Ñ Requires no component expertise Ñ Very low forward-power loss (1.5 W at 25 A typ) Ñ Low reverse loss (<25 µW typ) Ñ Very fast turn-off, retaining system integrity in fault conditions Ñ Slow turn-on, preventing high in-rush currents Part number VDS (V) Max R DS(ON)(mΩ) Package PIP401 N/A =2 D2PAK (7-pin) Point-of-load (POL) buck conversion NXP MOSFETs recommended for OR-ing Ñ High-speed, low-loss switching for power-efficient designs NXP 25-V, N-channel MOSFETs Ñ High-speed, low-loss switching for power-efficient designs Ñ SO8 footprint with low thermal resistance (2°K/W) Part number VDS (V) Max R DS(ON) (mΩ) Package PSMN002-25x 25 2.6 D2PAK, TO220 Part number VDS (V) Max R DS(ON) (mΩ) QGD (nC) Package PSMN003-30x 30 2.8 D PAK, TO220 PH2525L 25 2.5 7.3 LFPAK PH3330L 30 3.3 LFPAK PH4025L 25 4.0 4.6 LFPAK PSMN004-36B 36 4 D2PAK PH5525L 25 5.5 3.1 LFPAK PSMN004-60x 60 3.6 D2PAK, TO220 PH9025L 25 9.0 2.0 LFPAK 2 ORING MOS D G S PWM CTRL D G ctrl FET S CB Vout sync. FET bra847 Vout ≤ 3.3 V DC/DC buck conversion NXP integrated power train PIP212-12M Ñ All the power and driver functions for a single-phase synchronous buck converter Ñ Switching frequencies up to 1 MHz Ñ Optimized FETs and driver for simpler design-in and faster time-to-market Ñ Robust, thermally enhanced package for improved heat dissipation Ñ Increased system reliability with a single package instead of three Ñ Ideal for applications requiring high current density - DC/DC POL converters -B lade and 1U servers -C PU VRM cards for servers -S pace-critical DSP and ASIC designs Part number Input conversion rate (V) Output voltage (V) Max output current (A) Max operating frequency Package PIP212-12M 3.3 to 16 0.8 to 6.0 35 1 MHz HVQFN56 (8 x 8 x 0.85 mm) www.nxp.com/power www.nxp.com/power www.nxp.com © 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: January 2007 Document order number: 9397 750 15887 Printed in the Netherlands