FMS6G20US60S Compact & Complex Module Features Description • Short Circuit Rated 10µs @ TC = 100°C, VGE = 15V Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control and general inverters where short-circuit ruggedness is required. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 20A • High Input Impedance • Built-in 1 Phase Rectifier Circuit • Fast & Soft Anti-Parallel FWD • Built-in NTC Thermistor Applications • AC & DC Motor Controls • General Purpose Inverters • Robotics • Servo Controls 4 5 21 23 19 17 18 20 16 13 24 8 3 6 14 9 10 7 11 Package Code : 25PM-AA ©2005 Fairchild Semiconductor Corporation FMS6G20US60S Rev. B1 15 NTC 12 Internal Circuit Diagram 1 www.fairchildsemi.com FMS6G20US60S Compact & Complex Module August 2005 TC = 25°C unless otherwise noted Symbol Inverter Converter Common Description FMS6G20US60S Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD Maximum Power Dissipation @ TC = 25°C 89 W TSC Short Circuit Withstand Time @ TC = 100°C 10 µs @ TC = 80°C @ TC = 80°C 20 A 40 A 20 A 40 A VRRM Repetitive Peak Reverse Voltage 1600 V IO Average Output Rectified Current 30 A IFSM Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 300 A I2t Energy pulse @ 1Cycle at 60Hz 369 A2s TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C VISO Isolation Voltage @ AC 1minute 2500 V Mounting part Screw @ M4 2.0 N·m Mounting Torque Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FMS6G20US60S FMS6G20US60S 25PM-AA -- -- -- (2) TMC2 Relibility test was done under -45°C ~ 125°C FMS6G20US60S Rev. B1 2 www.fairchildsemi.com FMS6G20US60S Compact & Complex Module Absolute Maximum Ratings Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 µA IGES Gate - Emitter Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA 5.0 6.5 8.5 V -- 2.1 2.7 V -- 1277 -- pF On Characteristics VGE(th) Gate - Emitter Threshold Voltage IC = 20mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 98 -- pF -- 21 -- pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss -- 0.45 -- mJ Eoff Turn-Off Switching Loss -- 0.42 -- mJ td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Tsc Short Circuit Withstand Time Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge FMS6G20US60S Rev. B1 VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C -- 65 130 ns -- 100 200 ns -- 80 160 ns -- 100 200 ns -- 70 140 ns -- 100 200 ns -- 110 220 ns -- 210 350 ns -- 0.5 -- mJ -- 0.72 -- mJ VCC = 300 V, VGE = 15V @ TC = 100°C 10 -- -- µs VCE = 300 V, IC = 20A, VGE = 15V -- 55 65 nC -- 10 15 nC -- 20 30 nC 3 www.fairchildsemi.com FMS6G20US60S Compact & Complex Module Electrical Characteristics of IGBT @ Inverter Symbol VFM trr Irr Qrr Parameter TC = 25°C unless otherwise noted Test Conditions Diode Forward Voltage IF = 20A Diode Reverse Recovery Time IF = 20A di / dt = 40 A/µs Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Electrical Characteristics of DIODE @ Converter T VFM IRRM Parameter IF = 30A Repetitive Reverse Current VR = VRRM Max. Units V TC = 25°C -- 1.9 2.8 -- 2.0 -- TC = 25°C -- 75 150 TC = 100°C -- 110 -- TC = 25°C -- 1.3 2.6 TC = 100°C -- 1.8 -- TC = 25°C -- 50 195 TC = 100°C -- 100 -- ns A nC = 25°C unless otherwise noted Test Conditions Diode Forward Voltage Typ. TC = 100°C C Symbol Min. Min. Typ. Max. Units V TC = 25°C -- 1.1 1.5 TC = 100°C -- 1.0 -- TC = 25°C -- -- 8 TC = 100°C -- 5 -- mA Thermal Characteristics Symbol Inverter Converter Parameter Typ. Max. Units RθJC Junction-to-Case (IGBT Part, per 1/6 Module) -- 1.4 °C/W RθJC Junction-to-Case (DIODE Part, per 1/6 Module) -- 2.3 °C/W Junction-to-Case (DIODE Part, per 1/6 Module) -- 1.3 °C/W Weight of Module 60 -- g RθJC Weight NTC Thermistor Characteristics Symbol Thermistor Parameter Tol. Typ. Units KΩ R25 Rated Resistance @ Tc = 25°C +/- 5 % 4.7 B(25/100) B - Value +/- 3 % 3530 FMS6G20US60S Rev. B1 4 www.fairchildsemi.com FMS6G20US60S Compact & Complex Module Electrical Characteristics of DIODE @ Inverter FMS6G20US60S Compact & Complex Module Typical Performance Characteristics Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage Characteristics 0 6 0 6 V 5 1 Common Emitter VGE = 15V T C = 25℃ ℃℃ T C = 125℃ ------ 0 5 V 2 1 0 4 0 3 0 3 V 0 1 = V E G 0 2 0 2 ] A [ C I , t n e r r u C r o t c e l l o C 0 4 0 1 0 1 ] A [ C I , t n e r r u C r o t c e l l o C V 0 2 0 5 Common Emitter T C = 25℃ 0 0 ] 0 V 1 [ V , e g a t l o V r e t t i m E r 1 o t c e l l o C 8 ] V [ 6 V , e g a t l o V r 4 e t t i m E r o 2 t c e l l o C 0 E C E C Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 4. Transient Thermal Impedance 5 4 10 Common Emitter VGE = 15V T B G I A 0 2 2 A 0 1 = IC 1 0.1 e s l u P e l g n i S ) e s n o p s e r l a m r e h T ( 0 5 1 0 0 1 0 5 10 ] C o [ C T , e r u t a r e p m e T e s C 0 a 0 5 0- -5 10 -4 -3 10 10 -2 10 -1 0 10 1 10 Rectangular Pulse Duration [sec] Figure 6. Saturation Voltage vs. VGE 0 2 0 2 ] V [ Common Emitter TC = 25℃ 8 8 A 0 4 A 0 1 = IC A 0 2 4 A 0 4 A 0 1 = IC A 0 2 4 0 0 0 2 ] 6 V 1 [ V , e 2 g 1 a t l o V r e t t 8 i m E e G t 4 a 0 0 2 ] 6 V 1 [ V , e 2 g 1 a t l o V r e t t 8 i m E e G t 4 a 0 E G E G FMS6G20US60S Rev. B1 Common Emitter TC = 125℃ 2 1 2 1 V , e g a t l o V r e t t i m E r o t c e l l o C ) t a s ( E C 6 1 6 1 V , e g a t l o V r e t t i m E r o t c e l l o C ) t a s ( E C 1 0.01 Figure 5. Saturation Voltage vs. VGE ] V [ D R F A 0 4 3 V , e g a t l o V r e t t i m E r o t c e l l o C ) t a s ( E C Thermal Response, Zthjc [℃/W] ] V [ 5 www.fairchildsemi.com (Continued) Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate Resistance 0 0 0 1 0 0 0 3 s e i C 0 0 7 2 0 0 4 2 o TC = 25 C n o T s e o C 0 0 8 1 0 0 5 1 r T s e r C 0 0 2 1 0 0 1 ] s n [ e m i T g n i h c t i w S 0 0 1 2 0 0 9 0 0 6 ] F p [ e c n a t i c a p a C Common Emitter VCC = 300V, VGE = ± 15V IC = 20A TC = 25℃ ℃℃ TC = 125℃ ------ Common Emitter VGE = 0 V, f = 1 MHz 0 0 3 0 0 0 1 0 9 E C Figure 9. Turn-Off Characteristics vs. Gate Resistance 0 0 0 1 Figure 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 300V, VGE = ± 15V IC = 20A TC = 25℃ ℃℃ TC = 125℃ ------ f f o E f f o T f T f n f o o E E ] J u [ s s o L g n i h c t i w S 0 0 0 1 Common Emitter VCC = 300V, VGE = ± 15V IC = 20A TC = 25℃ ℃℃ TC = 125℃ ------ 0 0 1 ] s n [ e m i T g n i h c t i w S 0 8 0 7 0 6 0 5 0 4 ] V [ ] [ g R , e c n a t s i s e R e t a 0 G 3 0 2 0 1 0 1 V , e g a t l o V r e t t i m 1 E r o t c e l l o C 1 . 0 Ω 0 0 1 0 0 1 0 9 0 8 0 7 0 6 0 5 0 4 0 3 0 2 0 1 0 0 1 0 9 ] [ g R , e c n a t s i s e R e t a G 0 8 ] , [ 0 g 7 R a e 0 c 6 n e t 0 i s 5 s t a 0 R 4 e 0 G 3 0 2 0 1 Ω Ω Figure 11. Turn-On Characteristics vs. Collector Current Figure 12. Turn-Off Characteristics vs. Collector Current 0 0 0 1 0 0 0 1 0 0 1 f T r T 0 1 0 4 5 3 6 ] A [ 0 3 IC , t n e r 5 r 2 u C r o t ] A [ IC , t n e r r u C r o t c e l l o C o C 0 c 2 e l l 5 1 0 1 0 4 5 3 0 3 5 2 0 2 5 1 0 1 FMS6G20US60S Rev. B1 Common Emitter VGE = ± 15V, RG = 10Ω TC = 25℃ ℃℃ TC = 125℃ ------ f f o T n o T ] s n [ e m i T g n i h c t i w S 0 0 1 ] s n [ e m i T g n i h c t i w S Common Emitter VGE = ± 15V, RG = 10Ω TC = 25℃ ℃℃ TC = 125℃ ------ www.fairchildsemi.com FMS6G20US60S Compact & Complex Module Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics 5 1 0 0 0 0 1 V 0 0 3 C C V 0 0 2 0 0 0 1 f f o E 6 n o E 3 0 0 0 1 0 6 0 5 0 4 0 3 ] C n [ g Q , e g r a h C G 0 e t 2 a 0 1 0 0 4 5 3 0 3 5 2 ] A [ IC , t n e r r u C r o l o C t 0 c 2 e l 5 1 0 1 Figure 15. SOA Characteristics V 0 0 1 = o TC = 25 C E G 9 f f o E V , e g a t l o V r e t t i m E e t a G Common Emitter RL = 15 Ω 2 1 ] V [ V Common Emitter VGE = ± 15V, RG = 10Ω TC = 25℃ ℃℃ TC = 125℃ ------ ] J u [ s s o L g n i h c t i w S FMS6G20US60S Compact & Complex Module Typical Performance Characteristics Figure 16. RBSOA Characteristics 80 100 IC MAX. (Pulsed) [A] 100us Collector Current, I Collector Current, I DC Operation 1 Single Nonrepetitive Pulse T C = 25 ℃ Curves must be derated linearly with increase in temperature 0.1 0.01 0.3 1 10 10 C 1 ms C [A] 50us IC MAX. (Continuous) 10 100 1 0.1 1000 Single Nonrepetitive Pulse TJ ≤ 125℃ VGE = 15V RG = 10 Ω 0 100 Collector-Emitter Voltage, V CE [V] 500 600 700 Figure 18. Reverse Recovery Characteristics 30 Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [x10ns] Common Cathode VGE = 0V T C = 25℃ T C = 125℃ 35 [A] 400 20 40 F 300 Collector-Emitter Voltage, VCE [V] Figure 17. Forward Characteristics Forward Current, I 200 25 20 15 10 5 0 0 1 2 3 Trr Irr 1 Common Cathode di/dt = 40A/us TC = 25℃ TC = 100℃ -------0.1 3 4 6 9 12 15 18 21 Forward Current, IF [A] Forward Voltage, VF [V] FMS6G20US60S Rev. B1 10 7 www.fairchildsemi.com (Continued) Figure 19. Rectifier (Converter) Characteristics Figure 20. Rectifier (Converter) Characteristics 0 0 1 1 1 1 . 0 25℃ 25℃ 0 1 0 1 1 0 . 0 I R, Reverse Current [uA] 0 0 1 IF, Instantaneous Forward Current [A] 0 0 0 1 TC = 125℃ TC =125℃ 1 . 0 3 E 1 4 . 1 2 . 1 0 . 1 8 . 0 6 . 0 4 . 0 0 0 6 1 0 0 2 1 0 0 8 0 0 4 0 VF, Instantaneous Voltage [V] VR, Reverse Voltage [V] Figure 21. NTC Characteristics 6 1 2 1 Ω ] K [ R , e c n a t s i s e R 8 4 0 5 2 1 0 0 1 5 7 0 5 5 2 0 ] C o [ T , e r u t a r e p m e T FMS6G20US60S Rev. B1 8 www.fairchildsemi.com FMS6G20US60S Compact & Complex Module Typical Performance Characteristics FMS6G20US60S Compact & Complex Module Mechanical Dimensions 25PM-AA -. Pin Coordinate Name Plate 82.2 ±0.20 +0.20 x y 1 0.0 0.0 2 -3.0 0.0 3 -6.0 0.0 4 -13.0 0.0 5 -18.0 0.0 6 -25.0 0.0 7 -29.0 0.0 8 -32.0 0.0 71.0 -0.10 4- Ø6.0 4- Ø2.0 Coordinate Pin #No ±0.10 Dp 57.0 ±0.20 6.0 +0.20 22 17.5 ±0.20 1 4.3±0.20 23.0±0.15 21.0 ±0.20 3.2 -0.10 +0.20 11.2 -0.10 +0.20 Ø1.0 ±0.05 +0.20 +0.20 5.1 -0.10 4.3±0.20 +0.20 16.7 -0.10 14.0±0.15 12 16.3 -0.10 +0.20 30.8 -0.10 37.9 ±0.20 15 2- Ø4.3 -0.00 Mounting-Hole 9 -35.0 0.0 10 -38.0 0.0 11 -46.5 0.0 12 -49.5 0.0 13 -49.5 11.5 14 -49.5 20.0 15 -49.5 28.0 16 -32.0 28.0 17 -29.0 28.0 18 -23.0 28.0 19 -20.0 28.0 20 -14.0 28.0 21 -11.0 28.0 22 3.5 28.0 23 3.5 20.0 24 3.5 11.5 25 3.5 5.5 * datum pin : #1 * Pin Tilt : ±0.15 Dimensions in Millimeters FMS6G20US60S Rev. B1 9 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 10 FMS6G20US60S Rev. B1 www.fairchildsemi.com FMS6G20US60S Compact & Complex Module TRADEMARKS