FAIRCHILD FMC6G10US60

IGBT
FMC6G10US60
Compact & Complex Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
•
•
•
•
•
•
•
UL Certified No. E209204
Short circuit rated 10us @ TC = 100°C, VGE = 15V
High speed switching
Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A
High input impedance
Built in 3 phase rectifier circuit
Fast & soft anti-parallel FWD
Package Code : 21PM-AA
P
P1
GU
Applications
R
•
•
•
•
T
EU
GV
EV
GW
EW
S
U
AC & DC motor controls
General purpose inverters
Robotics
Servo controls
GU
N
GV
W
V
GW
B
E
Internal Circuit Diagram
Absolute Maximum Ratings
Inverter
Converter
Common
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TSC
VRRM
IO
IFSM
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
@ TC = 25°C
Pulsed Collector Current
Diode Continuous Forward Current
@ TC = 100°C
Diode Maximum Forward Current
Maximum Power Dissipation
@ TC = 25°C
Short Circuit Withstand Time
@ TC = 100°C
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
FMC7G10US60
600
± 20
10
20
10
20
36
10
1200
10
Units
V
V
A
A
A
A
W
us
V
A
100
A
41
A2s
I2t
TJ
Operating Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
VISO
Isolation Voltage
Mounting part Screw
2500
1.25
V
N.m
Mounting Torque
1 Cycle Surge Current
@ AC 1minute
@ M4
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2001 Fairchild Semiconductor Corporation
FMC6G10US60 Rev. A3
FMC6G10US60
June 2001
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
5.0
--
6.0
2.2
8.5
2.8
V
V
----
660
115
25
----
pF
pF
pF
---------------
15
30
36
158
0.14
0.22
0.36
16
33
42
242
0.16
0.45
0.61
--50
200
--0.5
--60
350
--0.86
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
VCC = 300 V, VGE = 15V
100°C
10
--
--
us
VCE = 300 V, IC = 10A,
VGE = 15V
----
30
5
8
45
10
16
nC
nC
nC
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
IC = 10mA, VCE = VGE
IC = 10A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
©2001 Fairchild Semiconductor Corporation
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 125°C
@ TC =
FMC6G10US60 Rev. A3
FMC6G10US60
Electrical Characteristics of the IGBT @ Inverter
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
TC = 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 10A
TC = 100°C
IF = 10A
di / dt = 20 A/us
Parameter
VFM
Diode Forward Voltage
IRRM
Repetitive Reverse Current
Max.
2.8
--
1.75
--
--
90
130
TC = 100°C
--
110
--
TC = 25°C
--
0.7
1.2
TC = 100°C
--
1
--
TC = 25°C
--
32
70
TC = 100°C
--
55
--
C
Units
V
ns
A
nC
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 10A
TC = 100°C
VR = VRRM
Typ.
1.8
TC = 25°C
Electrical Characteristics of the DIODE @ Converter T
Symbol
Min.
--
Min.
--
Typ.
1.1
Max.
1.5
--
1.0
--
TC = 25°C
--
--
8
TC = 100°C
--
5
--
Units
V
mA
Thermal Characteristics
Inverter
Converter
Weight
Symbol
RθJC
RθJC
RθJC
©2001 Fairchild Semiconductor Corporation
Parameter
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Weight of Module
Typ.
---60
Max.
3.47
4.0
3.6
--
Units
°C/W
°C/W
°C/W
g
FMC6G10US60 Rev. A3
FMC6G10US60
Electrical Characteristics of the DIODE @ Inverter
Common Emitter
T C = 25℃
35
15V
20V
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125℃ ------
25
Collector Current, IC [A]
Collector Current, IC [A]
FMC6G10US60
30
40
30
12V
25
20
V GE = 10V
15
20
15
10
10
5
5
0
0
0
2
4
6
1
8
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
16
Common Emitter
V GE = 15V
VCC = 300V
Load Current : peak of square wave
14
3.5
20A
12
Load Current [A]
Collector - Emitter Voltage, VCE [V]
4.0
3.0
2.5
10A
2.0
10
8
6
4
IC = 5A
1.5
Duty cycle : 50%
T C = 100℃
Power Dissipation = 18W
2
0
1.0
-50
0
50
100
0.1
150
1
10
Case Temperature, T C [℃]
100
1000
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
T C = 125℃
Collector - Emitter Voltage, VCE [V]
Common Emitter
T C = 25℃
Collector - Emitter Voltage, VCE [V]
10
Collector - Emitter Voltage, V CE [V]
16
12
8
20A
4
10A
IC = 5A
0
16
12
8
20A
4
10A
IC = 5A
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2001 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
FMC6G10US60 Rev. A3
FMC6G10US60
1400
Common Emitter
V GE = 0V, f = 1MHz
T C = 25℃
1000
Switching Time [ns]
Capacitance [pF]
1200
Cies
800
600
400
Common Emitter
V CC = 300V, V GE = ± 15V
IC = 10A
T C = 25℃ ━━
T C = 125℃ ------
Ton
Tr
100
Coes
200
Cres
10
0
1
10
10
Fig 7. Capacitance Characteristics
Switching Time [ns]
1000
100
Gate Resistance, R G [Ω ]
Collector - Emitter Voltage, VCE [V]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
VCC = 300V, V GE = ± 15V
IC = 10A
TC = 25℃ ━━
TC = 125℃ ------
1000
Switching Loss [uJ]
Toff
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
TC = 25℃ ━━
TC = 125℃ ------
Toff
Tf
Tf
Eoff
Eon
Eoff
100
100
10
100
10
100
Gate Resistance, R G [Ω ]
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VGE = ± 15V, RG = 20 Ω
TC = 25℃ ━━
TC = 125℃ ------
100
Switching Time [ns]
Switching Time [ns]
Common Emitter
V GE = ± 15V, RG = 20Ω
T C = 25℃ ━━
T C = 125℃ -----Ton
Tr
Toff
Tf
Toff
Tf
100
10
6
8
10
12
14
16
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
18
20
6
8
10
12
14
16
18
20
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMC6G10US60 Rev. A3
Gate - Emitter Voltage, VGE [ V ]
Switching Loss [uJ]
1000
Eoff
100
Eon
FMC6G10US60
15
Common Emitter
VGE = ± 15V, RG = 20 Ω
TC = 25℃ ━━
TC = 125℃ ------
Common Emitter
RL = 30 Ω
TC = 25℃
12
300 V
VCC = 100 V
200 V
9
6
3
0
5
10
15
20
0
10
Collector Current, IC [A]
20
30
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
50
IC MAX. (Pulsed)
50us
Collector Current, I C [A]
Collector Current, I C [A]
10
IC MAX. (Continuous)
100us
1㎳
1
DC Operation
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
10
Safe Operating Area
V GE = 20V, TC = 100℃
1
0.01
0.1
1
10
100
1
1000
10
Fig 15. SOA Characteristics
10
Thermal Response, Zthjc [℃/W]
Collector Current, I C [A]
1000
Fig 16. Turn-Off SOA Characteristics
50
10
1
0.1
100
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V CE [V]
Single Nonrepetitive
Pulse T J ≤ 125℃
VGE = 15V
RG = 20 Ω
0
100
200
0.1
IGBT :
DIODE :
0.01
300
400
500
Collector-Emitter Voltage, VCE [V]
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
1
600
700
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMC6G10US60 Rev. A3
20
F
[A]
30
Peak Reverse Recovery Current, Irr [A]
Reverse Recovery Time, Trr [x10ns]
Common Cathode
V GE = 0V
T C = 25℃
T C = 125℃
35
Forward Current, I
FMC6G10US60
40
25
20
15
10
5
0
0
1
2
Forward Voltage, V F [V]
Fig 19. Forward Characteristics
©2001 Fairchild Semiconductor Corporation
3
4
10
T rr
1
Irr
Common Cathode
di/dt = 20A/㎲
TC = 25℃
TC = 100℃
0.1
2
4
6
8
10
12
Forward Current, IF [A]
Fig 20. Reverse Recovery Characteristics
FMC6G10US60 Rev. A3
FMC6G10US60
Package Dimension
21PM-AA (FS PKG CODE BJ)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
FMC6G10US60 Rev. A3
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3