SGB10N60A Data Sheet (790 KB, EN)

SGB10N60A
Fast IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
G
E
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-263-3-2
1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGB10N60A
VCE
IC
VCE(sat)
Tj
Marking
Package
600V
10A
2.3V
150°C
G10N60A
PG-TO-263-3-2
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current
IC
Value
600
Unit
V
A
TC = 25°C
20
TC = 100°C
10.6
Pulsed collector current, tp limited by Tjmax
ICpul s
40
Turn off safe operating area
-
40
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
EAS
70
mJ
tSC
10
µs
Ptot
92
W
-55...+150
°C
VCE ≤ 600V, Tj ≤ 150°C
IC = 10 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
2
Short circuit withstand time
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Tj , Tstg
Operating junction and storage temperature
Soldering temperature (reflow soldering MSL1)
1
2
245
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3
July 07
SGB10N60A
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
1.35
K/W
RthJA
40
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
1)
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
1.7
2
2.4
T j =1 5 0° C
-
2.3
2.8
3
4
5
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 5 00 µA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V , I C = 10 A
T j =2 5 °C
Gate-emitter threshold voltage
VGE(th)
I C = 30 0 µA , V C E = V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V, V G E = 0 V
µA
T j =2 5 °C
-
-
40
T j =1 5 0° C
-
-
1500
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 10 A
-
6.7
-
S
Input capacitance
Ciss
V C E = 25 V ,
-
550
660
pF
Output capacitance
Coss
V G E = 0V ,
-
62
75
Reverse transfer capacitance
Crss
f= 1 MH z
-
42
51
Gate charge
QGate
V C C = 48 0 V, I C =1 0 A
-
52
68
nC
-
7
-
nH
-
100
-
A
Dynamic Characteristic
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
2)
Short circuit collector current
IC(SC)
V G E = 15 V ,t S C ≤ 10 µs
V C C ≤ 6 0 0 V,
T j ≤ 1 5 0° C
1)
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3
July 07
SGB10N60A
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
28
34
-
12
15
-
178
214
-
24
29
-
0.15
0.173
-
0.17
0.221
-
0.320
0.394
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 °C ,
V C C = 40 0 V, I C = 1 0 A,
V G E = 0/ 15 V ,
R G = 25 Ω,
1)
L σ = 18 0 nH ,
1)
C σ = 55 pF
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
28
34
-
12
15
-
198
238
-
26
32
-
0.260
0.299
-
0.280
0.364
-
0.540
0.663
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
T j =1 5 0° C
V C C = 40 0 V, I C = 1 0 A,
V G E = 0/ 15 V ,
R G = 25 Ω
1)
L σ = 18 0 nH ,
1)
C σ = 55 pF
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
3
Rev. 2.3
July 07
SGB10N60A
50A
t p =5 µs
Ic
40A
10A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
T C =80°c
30A
20A
10A
T C =110°c
Ic
15 µs
50 µs
2 00 µs
1A
1ms
DC
0,1A
0A
10Hz
100Hz
1kHz
10kHz 100kHz
1V
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 25Ω)
1000V
25A
100 W
20A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
100V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
120 W
80 W
60 W
40 W
20 W
0W
25 °C
10V
50 °C
75 °C
10 0°C
15A
10A
5A
0A
25°C
12 5°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
50°C
75°C
1 0 0 °C
1 2 5 °C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2.3
July 07
35A
35A
30A
30A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
SGB10N60A
25A
V G E= 2 0 V
20A
15V
13V
15A
11V
9V
10A
7V
5V
1V
2V
20A
15A
15V
13V
11V
9V
10A
7V
5V
3V
4V
0A
0V
5V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
35A
3,5V
T j=+25°C
+150°C
25A
20A
15A
10A
5A
0A
0V
2V
4V
6V
8V
10V
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
30A
IC, COLLECTOR CURRENT
V G E= 2 0 V
5A
5A
0A
0V
25A
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
I C =20A
3,0V
2,5V
I C =10A
2,0V
1,5V
0°C
I C =5A
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2.3
July 07
SGB10N60A
t, SWITCHING TIMES
t, SWITCHING TIMES
t d(off)
100ns
tf
t d(on)
tr
10ns
0A
5A
10A
15A
20A
1 00 n s
t d(o ff)
tf
t d(o n )
10 n s
0Ω
25A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 25Ω,
Dynamic test circuit in Figure E)
tr
20Ω
40 Ω
60 Ω
80Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 10A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
t d (o ff)
100ns
t d(o n)
tf
10ns
0°C
tr
50°C
100°C
150°C
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5 ,5 V
5 ,0 V
4 ,5 V
4 ,0 V
3 ,5 V
m ax.
3 ,0 V
2 ,5 V
ty p .
2 ,0 V
1 ,5 V
m in .
1 ,0 V
-5 0 ° C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 10A, RG = 2 5Ω,
Dynamic test circuit in Figure E)
0°C
5 0 °C
1 0 0 °C
1 5 0°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
6
Rev. 2.3
July 07
SGB10N60A
1,6m J
E ts *
1,2m J
1,0m J
0,8m J
E on *
0,6m J
E off
0,4m J
0,2m J
0,0m J
0A
5A
10A
15A
20A
E, SWITCHING ENERGY LOSSES
1,4m J
E, SWITCHING ENERGY LOSSES
1,0m J
*) Eon and Ets include losses
due to diode recovery.
0,4m J
E on *
20 Ω
40 Ω
60 Ω
80 Ω
0
0,4mJ
E ts*
E off
E on*
0,0mJ
0°C
E off
10 K/W
0,6mJ
0,2mJ
0,6m J
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 10A,
Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL IMPEDANCE
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery.
E ts *
0,8m J
0,2m J
0Ω
25A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 25Ω,
Dynamic test circuit in Figure E)
0,8mJ
*) Eon and Ets include losses
due to diode recovery.
D=0.5
0.2
0.1
-1
10 K/W
R,(K/W)
0.4287
0.4830
0.4383
0.05
0.02
-2
10 K/W
0.01
τ, (s)
0.0358
4.3*10-3
3.46*10-4
R1
single pulse
R2
C 1 = τ 1 / R 1 C 2 = τ 2 /R 2
-3
50°C
100°C
10 K/W
1µs
150°C
10µs
100µs
1m s
10m s 100m s
1s
tp, PULSE WIDTH
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 10A, RG = 2 5Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
7
Rev. 2.3
July 07
SGB10N60A
1nF
25V
20V
15V
C, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
C iss
120V
480V
10V
C oss
C rss
5V
0V
0nC
25nC
50nC
10pF
0V
75nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 10A)
20V
30V
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
200A
20µ s
15µ s
10µ s
5µ s
0µ s
10V
10V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25µ s
tsc, SHORT CIRCUIT WITHSTAND TIME
100pF
11V
12V
13V
14V
15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
150A
100A
50A
0A
10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ≤ 600V, Tj = 150°C)
8
Rev. 2.3
July 07
SGB10N60A
PG-TO263-3-2
9
Rev. 2.3
July 07
SGB10N60A
τ1
τ2
r1
PG-TO247-3-1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity C σ =55pF.
10
Rev. 2.3
July 07
SGB10N60A
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 7/11/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
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11
Rev. 2.3
July 07