4N25(G)V/ 4N35(G)V Series Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications 14827 Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. B 6 C 5 E 4 These couplers perform safety functions according to the following equipment standards: D VDE 0884 95 10805 VDE Standards 1 2 A (+) C (–) 3 n.c. Optocoupler for electrical safety requirements D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication processing apparatus and data D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking 4N25V/ 4N25GV1) >20% 4N35V/ 4N35GV1) >100% 1) G = Leadform 10.16 mm; G is not market on the body 86 Remarks Rev. A4, 11–Jan–99 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Features Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 General features: D Isolation materials according to UL94-VO D Pollution degree 2 D VDE 0884, Certificate number 94778 VDE 0884 related features: (DIN/VDE 0110 part 1 resp. IEC 664) D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 5 60 3 100 125 Unit V mA A mW °C Symbol VCEO VCEO IC ICM PV Tj Value 32 7 50 100 150 125 Unit V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 –55 to +100 –55 to +125 260 Unit kV mW °C °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Rev. A4, 11–Jan–99 Test Conditions t = 1 min Tamb ≤ 25°C 2 mm from case, t ≤ 10 s 87 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA Tamb = 100°C VR = 0, f = 1 MHz Symbol VF Min. Test Conditions IC = 1 mA IE = 100 mA VCE = 10 V, IF = 0, Tamb = 100°C VCE = 30 V, IF = 0, Tamb = 100°C Symbol VCEO VECO ICEO Test Conditions IF = 50 mA, IC = 2 mA Symbol VCEsat VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz fc 110 kHz Ck 1 pF Cj Typ. 1.2 Max. 1.4 50 Unit V pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Min. 32 7 Typ. ICEO Max. 50 Unit V V nA 500 mA Max. 0.3 Unit V Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Min. Typ. Current Transfer Ratio (CTR) Parameter IC/IF 88 Test Conditions VCE = 10 V, IF = 10 mA Type 4N25(G)V 4N35(G)V VCE = 10 V, IF = 10 mA, 4N35(G)V Tamb = 100°C Symbol CTR CTR CTR Min. 0.20 1.00 0.40 Typ. 1 1.5 Max. Unit Rev. A4, 11–Jan–99 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage – 100%, ttest = 1 s Routine test Partial discharge g test voltage g – tTr = 60 s, ttest = 10 s, Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C Symbol Vpd Min. 1.6 VIOTM Vpd RIO RIO 6 1.3 1012 1011 RIO 109 Typ. Max. Unit kV kV kV W W W VIOTM 300 V t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Phototransistor Psi ( mW ) 250 200 VPd 150 VIOWM VIORM 100 IR-Diode Isi ( mA ) 50 P tot – Total Power Dissipation ( mW ) (construction test only) 0 t3 ttest t4 0 0 94 9182 25 50 75 100 125 Tsi – Safety Temperature ( °C ) Figure 1. Derating diagram Rev. A4, 11–Jan–99 150 t1 13930 tTr = 60 s t2 tstres t Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 89 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Switching Characteristics of 4N25(G)V Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 5 mA, RL = 100 W ((see figure g 3)) VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure g 4)) Symbol td tr tf ts ton toff ton toff Typ. 4.0 7.0 6.7 0.3 11.0 7.0 25.0 42.5 Unit ms ms ms ms ms ms ms ms Symbol td tr tf ts ton toff ton toff Typ. 2.5 3.0 4.2 0.3 <10.0 <10.0 9.0 25.0 Unit ms ms ms ms ms ms ms ms Switching Characteristics of 4N35(G)V Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time IF Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W ((see figure g 3)) VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure 4)) g IF +5V 0 IC = 5 mA/ 2 mA; Adjusted through input amplitude RG = 50 W tp 0.01 T + tp = 50 ms 96 11698 IF 0 Channel I 50 W 100 W Channel II t tp Oscilloscope RL ≥ 1 M W CL ≤ 20 pF IC 100% 90% 14950 Figure 3. Test circuit, non-saturated operation IF 0 IF = 10 mA 10% 0 IC RG = 50 W tp T +5V + 0.01 td tp = 50 ms ts ton Channel I 50 W 1 kW Channel II Oscilloscope RL ≥ 1 M W CL ≤ 20 pF 95 10844 Figure 4. Test circuit, saturated operation 90 t tr tp tion td tr ton (= td + tr) tf toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 5. Switching times Rev. A4, 11–Jan–99 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 Coupled device 250 ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 300 200 Phototransistor 150 IR-diode 100 50 VCE=10V IF=0 1000 100 10 0 1 0 40 80 120 Tamb – Ambient Temperature ( °C ) 96 11700 0 96 11875 Figure 6. Total Power Dissipation vs. Ambient Temperature I CB – Collector Base Current ( mA ) I F – Forward Current ( mA ) 1.000 100.0 10.0 1.0 0.1 VF – Forward Voltage ( V ) CTR rel – Relative Current Transfer Ratio Figure 7. Forward Current vs. Forward Voltage VCE=10V IF=10mA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 96 11874 0.100 0.010 96 11876 10 100 IF – Forward Current ( mA ) Figure 10. Collector Base Current vs. Forward Current 100.00 1.5 1.3 VCB=10V 0.001 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tamb – Ambient Temperature ( °C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Rev. A4, 11–Jan–99 VCE=10V IC – Collector Current ( mA ) 0 1.4 Tamb – Ambient Temperature ( °C ) Figure 9. Collector Dark Current vs. Ambient Temperature 1000.0 96 11862 10 20 30 40 50 60 70 80 90 100 10.00 1.00 0.10 0.01 0.1 96 11904 1.0 10.0 100.0 IF – Forward Current ( mA ) Figure 11. Collector Current vs. Forward Current 91 4N25(G)V/ 4N35(G)V Series Vishay Telefunken 1000 IC – Collector Current ( mA ) IF=50mA CTR – Current Transfer Ratio ( % ) 100.0 20mA 10.0 10mA 5mA 1.0 2mA 1mA 0.1 0.1 10.0 VCE – Collector Emitter Voltage ( V ) 1 0.8 20% 0.6 CTR=50% 0.4 0.2 10% 100 10 IF – Forward Current ( mA ) Figure 15. Current Transfer Ratio vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) VCEsat – Collector Emitter Saturation Voltage ( V ) 0.1 95 10976 1.0 0 50 Saturated Operation VS=5V RL=1kW 40 30 toff 20 10 ton 0 1 100 10 IC – Collector Current ( mA ) 95 10972 5 800 VCE=10V 600 5V 400 200 10 20 15 IF – Forward Current ( mA ) Figure 16. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 1000 0 0.01 0 95 10974 Figure 13. Collector Emitter Saturation Voltage vs. Collector Current 95 10973 10 100.0 Figure 12. Collector Current vs. Collector Emitter Voltage hFE – DC Current Gain 100 1 1.0 96 11905 20 Non Saturated Operation VS=10V RL=100W 15 toff 10 ton 5 0 0.1 1 10 100 IC – Collector Current ( mA ) Figure 14. DC Current Gain vs. Collector Current 92 VCE=20V 0 95 10975 2 4 6 8 10 IC – Collector Current ( mA ) Figure 17. Turn on / off Time vs. Collector Current Rev. A4, 11–Jan–99 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Type Date Code (YM) XXXXXX 918 A TK 63 0884 V D E Production Location Safety Logo 15090 Coupling System Indicator Company Logo Figure 18. Marking example Dimensions of 4N25G/ 4N35G in mm weight: ca. 0.50 g creepage distance: air path: 8 mm y y 8 mm after mounting on PC board 14771 Rev. A4, 11–Jan–99 93 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Dimensions of 4N25/ 4N35 in mm weight: 0.50 g creepage distance: air path: 6 mm y y 6 mm after mounting on PC board 14770 94 Rev. A4, 11–Jan–99