CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 (DIN/VDE 0110 / resp. IEC 60664) • Climatic classification 55/100/21 (IEC 60068 part 1) • Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection • Low temperature coefficient of CTR • CTR offered in 3 groups • Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) • Rated recurring peak voltage (repetitive) VIORM = 600 VRMS • Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI ≥ 275 • Thickness through insulation ≥ 0.75 mm • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E76222 System Code A, Double Protection • BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending • VDE related features: • Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • FIMKO (SETI): EN 60950, Certificate No. 12399 B 6 C 5 E 4 1 2 3 A (+) C (-) nc V D E 17186 e3 Pb Pb-free For appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. Description The CNY75A/ B/ C/ GA/ GB/ GC consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. VDE Standards These couplers perform safety functions according to the following equipment standards: DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending Optocoupler for electrical safety requirements IEC 60950/ EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) VDE 0804 Telecommunication apparatus and data processing Applications IEC 60065 Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I - IV at mains voltage ≤ 300 V Safety for mains-operated electronic and related house hold appa- Document Number 83536 Rev. 1.7, 26-Oct-04 ratus www.vishay.com 1 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Order Information For additional information on the available options refer to Option Information. Part Remarks CNY75A CTR 63 - 125 %, DIP-6 CNY75B CTR 100 - 200 %, DIP-6 CNY75C CTR 160 - 320 %, DIP-6 CNY75GA CTR 63 - 125 %, DIP-6 CNY75GB CTR 100 - 200 %, DIP-6 CNY75GC CTR 160 - 320 %, DIP-6 G = Leadform 10.16 mm; G is not marked on the body Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Reverse voltage Forward current Forward surge current tp ≤ 10 µs Power dissipation Junction temperature Symbol Value Unit VR 5 V mA IF 60 IFSM 3 A Pdiss 100 mW Tj 125 °C Output Symbol Value Unit Collector base voltage Parameter Test condition VCBO 90 V Collector emitter voltage VCEO 90 V Emitter collector voltage VECO 7 V IC 50 mA Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature ICM 100 mA Pdiss 150 mW Tj 125 °C Symbol Value Unit VISO 3750 VRMS Coupler Parameter AC isolation test voltage (RMS) Test condition t = 1 min Total power dissipation Ptot 250 mW Ambient temperature range Tamb - 55 to + 100 °C Tstg - 55 to + 125 °C Tsld 260 °C Storage temperature range Soldering temperature www.vishay.com 2 2 mm from case, t ≤ 10 s Document Number 83536 Rev. 1.7, 26-Oct-04 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Forward voltage IF = 50 mA VF Reverse current VR = 6 V IR Junction capacitance VR = 0, f = 1 MHz Cj Min Typ. Max 1.25 1.6 Unit V 10 µA 50 pF Output Parameter Symbol Min IC = 100 µA VCBO 90 Collector emitter voltage IC = 1 mA VCEO 90 V Emitter collector voltage IE = 100 µA VECO 7 V Collector-emitter leakage current VCE = 20 V, IF = 0 ICEO Collector base voltage Test condition Typ. Max Unit V 150 nA Max Unit 0.3 V Coupler Parameter Test condition Symbol Min Typ. Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF Current Transfer Ratio Parameter IC/IF Test condition VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 10 mA Part Symbol Min CNY75GA CTR 15 Typ. Max Unit % CNY75GB CTR 30 % CNY75GC CTR 60 CNY75GA CTR 63 % 1.25 % CNY75GB CTR 100 200 % CNY75GC CTR 160 320 % Fall time Turn-on time Switching Characteristics Parameter Current Delay Rise time Storage Turn-off time VCC = 5 V, RL = 100 Ω (see figure 3) Test condition Symbol IF tD tr tS Turn-on time Turn-off time VCC = 5 V, RL = 1.0 kΩ (see figure 4) tf ton toff ton toff Unit mA µs µs µs µs µs µs µs µs CNY75GA 10 2.0 2.5 0.3 2.7 4.5 3.0 10.0 25.0 CNY75GB 10 2.5 3.0 0.3 3.7 5.5 4.0 16.5 20.0 CNY75GC 10 2.8 4.2 0.3 4.7 7.0 5.0 11.0 37.5 Document Number 83536 Rev. 1.7, 26-Oct-04 www.vishay.com 3 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Maximum Safety Ratings (according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input Parameter Test condition Forward current Symbol Min Typ. IF Max Unit 130 mA Max Unit 265 mW Output Parameter Test condition Power dissipation Symbol Min Typ. Pdiss Coupler Parameter Test condition Rated impulse voltage Safety temperature Symbol Max Unit VIOTM Min Typ. 6 kV Tsi 150 °C Max Unit Insulation Rated Parameters Parameter Test condition Partial discharge test voltage Routine test 100 %, ttest = 1 s Partial discharge test voltage Lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb ≤ 100 °C VIO = 500 V, Tamb ≤ 150 °C Symbol Min Vpd 1.6 Typ. kV VIOTM 6 kV Vpd 1.3 kV RIO 1012 Ω RIO 1011 Ω RIO 109 Ω (construction test only) Ptot - Total Power Dissipation ( mW ) VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s 275 250 225 Psi (mW) 200 VPd 175 VIOWM VIORM 150 125 100 75 Isi (mA) 50 0 0 0 95 10923 25 50 75 100 125 150 175 13930 t1 tTr = 60 s t2 tstres t Tamb - Ambient Temperature ( °C ) Figure 1. Derating diagram www.vishay.com 4 t3 ttest t4 25 Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 Document Number 83536 Rev. 1.7, 26-Oct-04 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 ICEO– Collector Dark Current, with open Base ( nA) P tot –Total Power Dissipation ( mW) 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 V CE=30V I F=0 1000 100 10 1 0 0 40 80 Tamb – Ambient Temperature( °C ) 96 11700 1000 100 10 1 75 100 1 V CB=5V 0.1 0.01 0.001 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F - Forward Voltage ( V ) 100 10 I F – Forward Current ( mA ) 95 11039 Figure 4. Forward Current vs. Forward Voltage Figure 7. Collector Base Current vs. Forward Current 100 1.5 1.4 1.3 V CE=5V I F=10mA 1.2 1.1 1.0 0.9 0.8 0.7 IC – Collector Current ( mA ) CTRrel – Relative Current Transfer Ratio 50 Figure 6. Collector Dark Current vs. Ambient Temperature 0.1 96 11862 25 Tamb – Ambient Temperature ( °C ) 95 11038 I CB – Collector Base Current ( mA) Figure 3. Total Power Dissipation vs. Ambient Temperature I F - Forward Current ( mA ) 0 120 V CE=5V 10 1 0.1 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 96 11918 Tamb – Ambient Temperature (°C ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature Document Number 83536 Rev. 1.7, 26-Oct-04 0.01 0.1 95 11040 1 10 100 I F – Forward Current ( mA ) Figure 8. Collector Current vs. Forward Current www.vishay.com 5 CNY75A/ B/ C/ GA/ GB/ GC I F=50mA 20mA 10mA 5mA 2mA 1mA CNY75A 0.1 0.1 1 100 10 V CE – Collector Emitter Voltage ( V ) 95 11041 IC – Collector Current ( mA ) 100 I F=50mA 20mA 10mA 5mA 2mA 1 1mA CNY75B 0.1 0.1 95 11042 1 100 10 V CE – Collector Emitter V oltage ( V ) Figure 10. Collector Current vs. Collector Emitter Voltage 100.0 IC – Collector Current ( mA) I F=50mA 20mA 10mA 10.0 5mA 2mA 1.0 1mA CNY75C 0.1 0.1 96 11919 1.0 10.0 100.0 V CE – Collector Emitter Voltage ( V ) Figure 11. Collector Current vs. Collector Emitter Voltage www.vishay.com 6 CTR=50% 0.8 CNY75A 0.6 0.4 20% 0.2 10% 0 1 100 10 I C – Collector Current ( mA ) 95 11034 Figure 9. Collector Current vs. Collector Emitter Voltage 10 1.0 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1.0 CTR=50% 0.8 CNY75B 0.6 20% 0.4 0.2 CEsat 1 V – Collector Emitter Saturation Voltage (V) 10 10% 0 1 100 10 I C – Collector Current ( mA ) 95 11043 Figure 13. Collector Emitter Saturation Voltage vs. Collector Current VCEsat – Collector Emitter Saturation Voltage (V ) IC – Collector Current ( mA ) 100 VCEsat– Collector Emitter Saturation V oltage (V) Vishay Semiconductors 1.0 CTR=50% 0.8 CNY75C 0.6 0.4 0.2 95 11044 20% 10% 0 1 100 10 I C – Collector Current ( mA ) Figure 14. Collector Emitter Saturation Voltage vs. Collector Current Document Number 83536 Rev. 1.7, 26-Oct-04 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors CTR – Current Transfer Ratio ( % ) 1000 hFE – DC Current Gain V CE=5V 800 600 400 200 0 0.01 1 10 100 10 100 0.1 CNY75A(G) V CE=5V 100 10 50 CNY75A(G) Saturated Operation V S=5V RL=1kˇΩ 40 30 toff 20 10 1 ton 0 0.1 1 10 100 I F – Forward Current ( mA ) 95 11036 0 5 10 20 15 I F – Forward Current ( mA ) 95 11033 Figure 16. Current Transfer Ratio vs. Forward Current Figure 19. Turn on / off Time vs. Forward Current 1000 50 ton / toff –Turn on / Turn off Time ( µıs ) CTR – Current Transfer Ratio ( % ) 100 10 Figure 18. Current Transfer Ratio vs. Forward Current ton / toff –Turn on / Turn off Time (ıµ s ) 1000 1 I F – Forward Current ( mA ) 95 11046 Figure 15. DC Current Gain vs. Collector Current CTR – Current Transfer Ratio ( % ) CNY75C(G) V CE=5V 1 0.1 I C – Collector Current ( mA ) 95 11035 1000 CNY75B(G) V CE=5V 100 10 30 toff 20 10 1 ton 0 0.1 95 11045 CNY75B(G) Saturated Operation V S=5V RL=1kˇΩ 40 1 10 100 I F – Forward Current ( mA ) Figure 17. Current Transfer Ratio vs. Forward Current Document Number 83536 Rev. 1.7, 26-Oct-04 0 95 11048 5 10 15 20 I F – Forward Current ( mA ) Figure 20. Turn on / off Time vs. Forward Current www.vishay.com 7 CNY75A/ B/ C/ GA/ GB/ GC 50 CNY75C(G) Saturated Operation V S=5V RL=1kˇΩ 40 20 ton / toff –Turn on / Turn off Time ( µ s ) ton / toff –Turn on / Turn off Time ( µıs ) Vishay Semiconductors toff 30 20 10 ton 15 ton 10 toff 5 0 0 0 5 10 20 15 I F – Forward Current ( mA ) 95 11050 0 95 11049 ton / toff –Turn on / Turn off Time ( ıµ s ) Figure 21. Turn on / off Time vs. Forward Current 2 4 10 8 6 I C – Collector Current ( mA ) Figure 24. Turn on / off Time vs. Collector Current 20 CNY75A(G) Non Saturated Operation V S=5V RL=100ˇΩ 15 ton Customer Code/ Identification/ Option 10 Product Code V D E VDE Logo UL Logo toff V XXXY 68 5 Plant Code 0 0 2 4 6 10 8 I C – Collector Current ( mA ) 95 11032 Package Code Vishay Logo 17936 Figure 22. Turn on / off Time vs. Collector Current ton / toff –Turn on / Turn off Time ( µıs ) CNY75C(G) Non Saturated Operation V S=5V RL=100ˇΩ Date Code (year, week) Figure 25. Marking example 20 CNY75B(G) Non Saturated Operation V S=5V RL=100ˇΩ 15 10 ton 5 toff 0 0 95 11047 2 4 6 8 10 I C – Collector Current ( mA ) Figure 23. Turn on / off Time vs. Collector Current www.vishay.com 8 Document Number 83536 Rev. 1.7, 26-Oct-04 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Package Dimensions in mm 14770 Package Dimensions in mm 14771 Document Number 83536 Rev. 1.7, 26-Oct-04 www.vishay.com 9 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 83536 Rev. 1.7, 26-Oct-04