VISHAY CNY75GC

CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110 / resp. IEC
60664)
• Climatic classification 55/100/21
(IEC 60068 part 1)
• Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common
Mode Rejection
• Low temperature coefficient of CTR
• CTR offered in 3 groups
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
• Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
• Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index: CTI
≥ 275
• Thickness through insulation ≥ 0.75 mm
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E76222 System Code A, Double
Protection
• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN
60950 (BS 7002), Certificate number 7081 and
7402
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• VDE related features:
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• FIMKO (SETI): EN 60950, Certificate No. 12399
B
6
C
5
E
4
1
2
3
A (+) C (-) nc
V
D E
17186
e3
Pb
Pb-free
For appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.
Description
The CNY75A/ B/ C/ GA/ GB/ GC consists of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-pin plastic dual inline
package.
The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.
VDE Standards
These couplers perform safety functions according to the following
equipment standards:
DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending
Optocoupler for electrical safety requirements
IEC 60950/ EN 60950
Office machines (applied for reinforced isolation for mains voltage
≤ 400 VRMS)
VDE 0804
Telecommunication apparatus and data processing
Applications
IEC 60065
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
For appl. class I - IV at mains voltage ≤ 300 V
Safety for mains-operated electronic and related house hold appa-
Document Number 83536
Rev. 1.7, 26-Oct-04
ratus
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1
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Order Information
For additional information on the available options refer to
Option Information.
Part
Remarks
CNY75A
CTR 63 - 125 %, DIP-6
CNY75B
CTR 100 - 200 %, DIP-6
CNY75C
CTR 160 - 320 %, DIP-6
CNY75GA
CTR 63 - 125 %, DIP-6
CNY75GB
CTR 100 - 200 %, DIP-6
CNY75GC
CTR 160 - 320 %, DIP-6
G = Leadform 10.16 mm; G is not marked on the body
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Reverse voltage
Forward current
Forward surge current
tp ≤ 10 µs
Power dissipation
Junction temperature
Symbol
Value
Unit
VR
5
V
mA
IF
60
IFSM
3
A
Pdiss
100
mW
Tj
125
°C
Output
Symbol
Value
Unit
Collector base voltage
Parameter
Test condition
VCBO
90
V
Collector emitter voltage
VCEO
90
V
Emitter collector voltage
VECO
7
V
IC
50
mA
Collector current
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
Power dissipation
Junction temperature
ICM
100
mA
Pdiss
150
mW
Tj
125
°C
Symbol
Value
Unit
VISO
3750
VRMS
Coupler
Parameter
AC isolation test voltage (RMS)
Test condition
t = 1 min
Total power dissipation
Ptot
250
mW
Ambient temperature range
Tamb
- 55 to + 100
°C
Tstg
- 55 to + 125
°C
Tsld
260
°C
Storage temperature range
Soldering temperature
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2
2 mm from case, t ≤ 10 s
Document Number 83536
Rev. 1.7, 26-Oct-04
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Forward voltage
IF = 50 mA
VF
Reverse current
VR = 6 V
IR
Junction capacitance
VR = 0, f = 1 MHz
Cj
Min
Typ.
Max
1.25
1.6
Unit
V
10
µA
50
pF
Output
Parameter
Symbol
Min
IC = 100 µA
VCBO
90
Collector emitter voltage
IC = 1 mA
VCEO
90
V
Emitter collector voltage
IE = 100 µA
VECO
7
V
Collector-emitter leakage
current
VCE = 20 V, IF = 0
ICEO
Collector base voltage
Test condition
Typ.
Max
Unit
V
150
nA
Max
Unit
0.3
V
Coupler
Parameter
Test condition
Symbol
Min
Typ.
Collector emitter saturation
voltage
IF = 10 mA, IC = 1 mA
VCEsat
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
kHz
Coupling capacitance
f = 1 MHz
Ck
0.3
pF
Current Transfer Ratio
Parameter
IC/IF
Test condition
VCE = 5 V, IF = 1 mA
VCE = 5 V, IF = 10 mA
Part
Symbol
Min
CNY75GA
CTR
15
Typ.
Max
Unit
%
CNY75GB
CTR
30
%
CNY75GC
CTR
60
CNY75GA
CTR
63
%
1.25
%
CNY75GB
CTR
100
200
%
CNY75GC
CTR
160
320
%
Fall time
Turn-on
time
Switching Characteristics
Parameter
Current
Delay
Rise time
Storage
Turn-off
time
VCC = 5 V, RL = 100 Ω
(see figure 3)
Test
condition
Symbol
IF
tD
tr
tS
Turn-on
time
Turn-off
time
VCC = 5 V, RL = 1.0 kΩ
(see figure 4)
tf
ton
toff
ton
toff
Unit
mA
µs
µs
µs
µs
µs
µs
µs
µs
CNY75GA
10
2.0
2.5
0.3
2.7
4.5
3.0
10.0
25.0
CNY75GB
10
2.5
3.0
0.3
3.7
5.5
4.0
16.5
20.0
CNY75GC
10
2.8
4.2
0.3
4.7
7.0
5.0
11.0
37.5
Document Number 83536
Rev. 1.7, 26-Oct-04
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CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input
Parameter
Test condition
Forward current
Symbol
Min
Typ.
IF
Max
Unit
130
mA
Max
Unit
265
mW
Output
Parameter
Test condition
Power dissipation
Symbol
Min
Typ.
Pdiss
Coupler
Parameter
Test condition
Rated impulse voltage
Safety temperature
Symbol
Max
Unit
VIOTM
Min
Typ.
6
kV
Tsi
150
°C
Max
Unit
Insulation Rated Parameters
Parameter
Test condition
Partial discharge test voltage Routine test
100 %, ttest = 1 s
Partial discharge test voltage Lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
Insulation resistance
VIO = 500 V
VIO = 500 V, Tamb ≤ 100 °C
VIO = 500 V, Tamb ≤ 150 °C
Symbol
Min
Vpd
1.6
Typ.
kV
VIOTM
6
kV
Vpd
1.3
kV
RIO
1012
Ω
RIO
1011
Ω
RIO
109
Ω
(construction test only)
Ptot - Total Power Dissipation ( mW )
VIOTM
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
275
250
225
Psi (mW)
200
VPd
175
VIOWM
VIORM
150
125
100
75
Isi (mA)
50
0
0
0
95 10923
25
50
75
100
125
150
175
13930
t1
tTr = 60 s
t2
tstres
t
Tamb - Ambient Temperature ( °C )
Figure 1. Derating diagram
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4
t3 ttest t4
25
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
Document Number 83536
Rev. 1.7, 26-Oct-04
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10000
ICEO– Collector Dark Current,
with open Base ( nA)
P tot –Total Power Dissipation ( mW)
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
V CE=30V
I F=0
1000
100
10
1
0
0
40
80
Tamb – Ambient Temperature( °C )
96 11700
1000
100
10
1
75
100
1
V CB=5V
0.1
0.01
0.001
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V F - Forward Voltage ( V )
100
10
I F – Forward Current ( mA )
95 11039
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Collector Base Current vs. Forward Current
100
1.5
1.4
1.3
V CE=5V
I F=10mA
1.2
1.1
1.0
0.9
0.8
0.7
IC – Collector Current ( mA )
CTRrel – Relative Current Transfer Ratio
50
Figure 6. Collector Dark Current vs. Ambient Temperature
0.1
96 11862
25
Tamb – Ambient Temperature ( °C )
95 11038
I CB – Collector Base Current ( mA)
Figure 3. Total Power Dissipation vs. Ambient Temperature
I F - Forward Current ( mA )
0
120
V CE=5V
10
1
0.1
0.6
0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
96 11918
Tamb – Ambient Temperature (°C )
Figure 5. Relative Current Transfer Ratio vs. Ambient
Temperature
Document Number 83536
Rev. 1.7, 26-Oct-04
0.01
0.1
95 11040
1
10
100
I F – Forward Current ( mA )
Figure 8. Collector Current vs. Forward Current
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CNY75A/ B/ C/ GA/ GB/ GC
I F=50mA
20mA
10mA
5mA
2mA
1mA
CNY75A
0.1
0.1
1
100
10
V CE – Collector Emitter Voltage ( V )
95 11041
IC – Collector Current ( mA )
100
I F=50mA
20mA
10mA
5mA
2mA
1
1mA
CNY75B
0.1
0.1
95 11042
1
100
10
V CE – Collector Emitter V oltage ( V )
Figure 10. Collector Current vs. Collector Emitter Voltage
100.0
IC – Collector Current ( mA)
I F=50mA
20mA
10mA
10.0
5mA
2mA
1.0
1mA
CNY75C
0.1
0.1
96 11919
1.0
10.0
100.0
V CE – Collector Emitter Voltage ( V )
Figure 11. Collector Current vs. Collector Emitter Voltage
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6
CTR=50%
0.8
CNY75A
0.6
0.4
20%
0.2
10%
0
1
100
10
I C – Collector Current ( mA )
95 11034
Figure 9. Collector Current vs. Collector Emitter Voltage
10
1.0
Figure 12. Collector Emitter Saturation Voltage vs. Collector
Current
1.0
CTR=50%
0.8
CNY75B
0.6
20%
0.4
0.2
CEsat
1
V – Collector Emitter Saturation Voltage (V)
10
10%
0
1
100
10
I C – Collector Current ( mA )
95 11043
Figure 13. Collector Emitter Saturation Voltage vs. Collector
Current
VCEsat
– Collector Emitter Saturation Voltage (V )
IC – Collector Current ( mA )
100
VCEsat– Collector Emitter Saturation V oltage (V)
Vishay Semiconductors
1.0
CTR=50%
0.8
CNY75C
0.6
0.4
0.2
95 11044
20%
10%
0
1
100
10
I C – Collector Current ( mA )
Figure 14. Collector Emitter Saturation Voltage vs. Collector
Current
Document Number 83536
Rev. 1.7, 26-Oct-04
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
CTR – Current Transfer Ratio ( % )
1000
hFE – DC Current Gain
V CE=5V
800
600
400
200
0
0.01
1
10
100
10
100
0.1
CNY75A(G)
V CE=5V
100
10
50
CNY75A(G)
Saturated Operation
V S=5V
RL=1kˇΩ
40
30
toff
20
10
1
ton
0
0.1
1
10
100
I F – Forward Current ( mA )
95 11036
0
5
10
20
15
I F – Forward Current ( mA )
95 11033
Figure 16. Current Transfer Ratio vs. Forward Current
Figure 19. Turn on / off Time vs. Forward Current
1000
50
ton / toff –Turn on / Turn off Time ( µıs )
CTR – Current Transfer Ratio ( % )
100
10
Figure 18. Current Transfer Ratio vs. Forward Current
ton / toff –Turn on / Turn off Time (ıµ s )
1000
1
I F – Forward Current ( mA )
95 11046
Figure 15. DC Current Gain vs. Collector Current
CTR – Current Transfer Ratio ( % )
CNY75C(G)
V CE=5V
1
0.1
I C – Collector Current ( mA )
95 11035
1000
CNY75B(G)
V CE=5V
100
10
30
toff
20
10
1
ton
0
0.1
95 11045
CNY75B(G)
Saturated Operation
V S=5V
RL=1kˇΩ
40
1
10
100
I F – Forward Current ( mA )
Figure 17. Current Transfer Ratio vs. Forward Current
Document Number 83536
Rev. 1.7, 26-Oct-04
0
95 11048
5
10
15
20
I F – Forward Current ( mA )
Figure 20. Turn on / off Time vs. Forward Current
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CNY75A/ B/ C/ GA/ GB/ GC
50
CNY75C(G)
Saturated Operation
V S=5V
RL=1kˇΩ
40
20
ton / toff –Turn on / Turn off Time ( µ s )
ton / toff –Turn on / Turn off Time ( µıs )
Vishay Semiconductors
toff
30
20
10
ton
15
ton
10
toff
5
0
0
0
5
10
20
15
I F – Forward Current ( mA )
95 11050
0
95 11049
ton / toff –Turn on / Turn off Time ( ıµ s )
Figure 21. Turn on / off Time vs. Forward Current
2
4
10
8
6
I C – Collector Current ( mA )
Figure 24. Turn on / off Time vs. Collector Current
20
CNY75A(G)
Non Saturated
Operation
V S=5V
RL=100ˇΩ
15
ton
Customer Code/
Identification/
Option
10
Product Code
V
D E
VDE Logo
UL Logo
toff
V XXXY 68
5
Plant Code
0
0
2
4
6
10
8
I C – Collector Current ( mA )
95 11032
Package Code
Vishay Logo
17936
Figure 22. Turn on / off Time vs. Collector Current
ton / toff –Turn on / Turn off Time ( µıs )
CNY75C(G)
Non Saturated
Operation
V S=5V
RL=100ˇΩ
Date Code (year, week)
Figure 25. Marking example
20
CNY75B(G)
Non Saturated
Operation
V S=5V
RL=100ˇΩ
15
10
ton
5
toff
0
0
95 11047
2
4
6
8
10
I C – Collector Current ( mA )
Figure 23. Turn on / off Time vs. Collector Current
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Document Number 83536
Rev. 1.7, 26-Oct-04
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Package Dimensions in mm
14770
Package Dimensions in mm
14771
Document Number 83536
Rev. 1.7, 26-Oct-04
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CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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10
Document Number 83536
Rev. 1.7, 26-Oct-04