K817P/ K827PH/ K847PH Vishay Telefunken Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Programmable logic controllers, modems, answering machines, general applications 14925 Features Coll. Emitter 13929 D Endstackable to 2.54 mm (0.1’) spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) selected into groups D Low temperature coefficient of CTR D Wide ambient temperature range D Underwriters Laboratory (UL) 1577 recognized, Anode Cath. 4 PIN file number E-76222 8 PIN 16 PIN D CSA (C–UL) 1577 recognized, file number E-76222 – Double Protection C D Coupling System U Order Instruction Ordering Code K817P K827PH K847PH K817P1 K817P2 K817P3 K817P4 K817P5 K817P6 K817P7 K827P8 K817P9 Rev. A2, 11–Jan–99 CTR Ranking 50 to 600% 50 to 600% 50 to 600% 40 to 80% 63 to 125% 100 to 200% 160 to 320% 50 to 150% 100 to 300% 80 to 160% 130 to 260% 200 to 400% Remarks 4 Pin = Single channel 8 Pin = Dual channel 16 Pin = Quad channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 177 K817P/ K827PH/ K847PH Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 60 1.5 100 125 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW °C Symbol VIO 1) Ptot Tamb Value 5 250 –40 to +100 Unit kV mW °C Tstg Tsd –55 to +125 260 °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Test Conditions AC isolation test voltage (RMS) t = 1 min Total power dissipation Tamb ≤ 25°C Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t ≤ 10 s 1) Related to standard climate 23/50 DIN 50014 178 Rev. A2, 11–Jan–99 K817P/ K827PH/ K847PH Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 100 mA IE = 100 mA VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. 100 Unit V V nA Test Conditions IF = 10 mA, IC = 1 mA Symbol VCEsat Min. Max. 0.3 Unit V IF = 10 mA, VCE = 5 V, RL = 100 W f = 1 MHz fc 100 kHz Ck 0.3 pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Typ. Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA Rev. A2, 11–Jan–99 Type K817P K827PH K847PH K817P1 K817P2 K817P3 K817P4 K817P5 K817P6 K817P7 K817P8 K817P9 Symbol CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR Min. 0.5 0.5 0.5 0.4 0.63 1.0 1.6 0.5 1.0 0.8 1.3 2.0 Typ. Max. 6.0 6.0 6.0 0.8 1.25 2.0 3.2 1.5 3.0 1.6 2.6 4.0 Unit 179 K817P/ K827PH/ K847PH Vishay Telefunken Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time IF 0 Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W ((see figure g 1)) Symbol td tr tf ts ton toff ton toff VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure g 2)) Typ. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 18.0 Unit ms ms ms ms ms ms ms ms +5V IF IC = 2 mA ; Adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 ms 96 11698 IF Channel I 50 W 100 Channel II W Oscilloscope RL = 1 M W CL = 20 pF 95 10804 Figure 1. Test circuit, non-saturated operation IF 0 IF = 10 mA 0 IC 100% 90% 10% 0 +5V td + ts ton tp = 50 ms Channel I 50 W Channel II 1 kW t tr IC RG = 50 W tp 0.01 T t tp Oscilloscope RL ≥ 1 MW CL ≤ 20 pF tp tion td tr ton (= td + tr) tf toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time 95 10843 Figure 2. Test circuit, saturated operation 180 Figure 3. Switching times Rev. A2, 11–Jan–99 K817P/ K827PH/ K847PH Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 Coupled device ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 300 250 200 Phototransistor 150 IR-diode 100 50 VCE=20V IF=0 1000 100 10 0 1 0 40 80 120 Tamb – Ambient Temperature ( °C ) 96 11700 0 100 IC – Collector Current ( mA ) I F – Forward Current ( mA ) 100.0 10.0 1.0 0.1 VCE=5V 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 96 11862 0.1 100 10 Figure 8. Collector Current vs. Forward Current 100 2.0 20mA IC – Collector Current ( mA ) VCE=5V IF=5mA 1.5 1.0 0.5 0 –25 1 IF – Forward Current ( mA ) 95 11027 Figure 5. Forward Current vs. Forward Voltage CTR rel – Relative Current Transfer Ratio 100 75 Figure 7. Collector Dark Current vs. Ambient Temperature 1000.0 95 11025 50 Tamb – Ambient Temperature ( °C ) 95 11026 Figure 4. Total Power Dissipation vs. Ambient Temperature 25 IF=50mA 10mA 10 5mA 2mA 1 1mA 0.1 0 25 50 75 Tamb – Ambient Temperature ( °C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature Rev. A2, 11–Jan–99 0.1 95 10985 1 10 100 VCE – Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage 181 K817P/ K827PH/ K847PH 1.0 t on / t off – Turn on / Turn off Time ( m s ) VCEsat – Collector Emitter Saturation Voltage ( V ) Vishay Telefunken 20% 0.8 CTR=50% 0.6 0.4 0.2 10% 0 Saturated Operation VS=5V RL=1kW 40 30 toff 20 10 ton 0 1 100 10 IC – Collector Current ( mA ) 95 11028 0 5 VCE=5V 100 10 15 20 Figure 12. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 1000 10 IF – Forward Current ( mA ) 95 11031 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current CTR – Current Transfer Ratio ( % ) 50 1 10 8 Non Saturated Operation VS=5V RL=100W ton 6 toff 4 2 0 0.1 1 100 10 IF – Forward Current ( mA ) 95 11029 Figure 11. Current Transfer Ratio vs. Forward Current Pin 1 Indication 0 95 11030 2 4 6 10 IC – Collector Current ( mA ) Figure 13. Turn on / off Time vs. Collector Current Type K817P 820UTK63 15080 Date Code (YM) 182 Coupling Company Production Logo Location System Indicator Figure 14. Marking example Rev. A2, 11–Jan–99 K817P/ K827PH/ K847PH Vishay Telefunken Dimensions of K817P. in mm y y weight: ca. 0.25 g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14789 Dimensions of K827PH in mm weight: creepage distance: air path: y y ca. 0.55 g 6 mm 6 mm after mounting on PC board 14784 Rev. A2, 11–Jan–99 183 K817P/ K827PH/ K847PH Vishay Telefunken Dimensions of K847PH in mm y y weight: ca. 1.0 g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14783 184 Rev. A2, 11–Jan–99