New Product Si5920DC Vishay Siliconix Dual N-Channel 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ) 7.3 nC • TrenchFET® Power MOSFET: 1.5 V Rated • Ultra -low on-resistance in compact, thermally enhanced ChipFET® package RoHS COMPLIANT APPLICATIONS • Load switch for portable applications - Guaranteed operation at VGS = 1.5 V critical for opti mized design and space savings 1206-8 ChipFET® (Dual) 1 D1 S1 D1 D2 G1 D1 S2 D2 G2 Marking Code D2 Bottom View CD XXX G1 G2 Lot Traceability and Date Code Part # Code Ordering Information: Si5920DC-T1-E3 (Lead (Pb)-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) IDM Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ID d, e IS PD TJ, Tstg Limit 8 ±5 4a 4a 4a 4a 25 2.6 1.7c 3.12 2.0 2.04b, c 1.3b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t ≤ 5 sec 50 60 Maximum Junction-to-Ambientb, f °C/W RthJF 30 40 Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. Document Number: 73490 S-70914-Rev. C, 07-May-07 www.vishay.com 1 New Product Si5920DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 250 µA 8 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Transconductancea gfs Forward V 8.2 mV/°C - 2.6 0.3 1 V ± 100 ns VDS = 8 V, VGS = 0 V 1 VDS = 8 V, VGS = 0 V, TJ = 55 °C 10 VDS ≤ 5 V, VGS = 4.5 V 25 µA A VGS = 4.5 V, ID = 6.8 A 0.025 0.032 VGS = 2.5 V, ID = 6.3 A 0.0285 0.036 VGS = 1.8 V, ID = 2.5 A 0.036 0.045 VGS = 1.5 V, ID = 1.8 A 0.041 0.054 VDS = 4 V, ID = 6.8 A 18 VDS = 4 V, VGS = 0 V, f = 1 MHz 230 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 680 VDS = 4 V, VGS = 5 V, ID = 6.8 A VDS = 4 V, VGS = 4.5 V, ID = 6.8 A td(off) 8 12 7.3 11 0.84 nC 1.26 f = 1 MHz td(on) tr pF 140 VDD = 4 V, RL = 0.73 Ω ID ≅ 5.5 A, VGEN = 4.5 V, Rg = 1 Ω tf 1.8 2.7 8 12 11 17 18 27 7 11 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 2.6 25 IS = 2.6 A, VGS = 0 V A 0.8 1.2 Body Diode Reverse Recovery Time trr 12 18 ns Body Diode Reverse Recovery Charge Qrr 3 5 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C 7 5 V ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73490 S-70914-Rev. C, 07-May-07 New Product Si5920DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 25 VGS = 5 thru 2 V VGS = 1.8 V I D - Drain Current (A) I D - Drain Current (A) 20 15 VGS = 1.5 V 10 6 TC = - 55 °C 4 TC = 25 °C TC = 125 °C 2 5 VGS = 1 V 0 0.0 1.0 2.0 0 0.0 3.0 0.3 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.06 1000 VGS = 1.5 V 900 800 0.05 C - Capacitance (pF) rDS(on) - D to S On-Resistance (Ω) 0.6 0.04 VGS = 1.8 V VGS = 2.5 V 0.03 Ciss 700 600 500 400 Coss 300 200 VGS = 4.5 V Crss 100 0.02 0 0 5 10 15 20 25 30 0 1 2 3 4 5 6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) rDS(on) vs. Drain Current Capacitance 7 8 1.6 5 1.4 4 VDS = 4 V rDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) ID = 6.8 A VDS = 6.4 V 3 2 VGS = 4.5 V, ID = 5 A VGS = 1.5 V, ID = 1.8 A 1.2 VGS = 2.5 V, ID = 4.8 A VGS = 1.8 V, ID = 2.5 A 1.0 0.8 1 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73490 S-70914-Rev. C, 07-May-07 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si5920DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.06 rDS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 10.0 TA = 150 °C TA = 25 °C 1.0 0.1 0.0 0.05 TA = 125 °C 0.04 0.03 TA = 25 °C 0.02 0.2 0.4 0.6 0.8 1.0 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temp rDS(on) vs. VGS vs. Temperature 0.9 50 ID = 250 µA 0.8 40 30 Power (W) VGS(th) (V) 0.7 0.6 0.5 20 0.4 10 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 10-4 150 10-3 10-2 TJ - Temperature (°C) 10-1 1 10 100 600 Time (sec) Threshold Voltage Single Pulse Power 100 *Limited by rDS(on) 10 ms I D - Drain Current (A) 10 100 ms 1s 10 s 1 0.1 dc TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 73490 S-70914-Rev. C, 07-May-07 New Product Si5920DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 10 8 Power Dissipation (W) ID - Drain Current (A) 3 6 Package Limited 4 2 1 2 0 0 0 25 50 75 100 125 150 0 TC - Case Temperature (°C) 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Current Derating* Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73490 S-70914-Rev. C, 07-May-07 www.vishay.com 5 New Product Si5920DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73490. www.vishay.com 6 Document Number: 73490 S-70914-Rev. C, 07-May-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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