VISHAY SI5920DC-T1-E3

New Product
Si5920DC
Vishay Siliconix
Dual N-Channel 1.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
8
rDS(on) (Ω)
ID (A)
0.032 at VGS = 4.5 V
4a
0.036 at VGS = 2.5 V
4a
0.045 at VGS = 1.8 V
4a
0.054 at VGS = 1.5 V
4a
Qg (Typ)
7.3 nC
• TrenchFET® Power MOSFET: 1.5 V Rated
• Ultra -low on-resistance in compact,
thermally enhanced ChipFET® package
RoHS
COMPLIANT
APPLICATIONS
• Load switch for portable applications
- Guaranteed operation at VGS = 1.5 V critical for opti
mized design and space savings
1206-8 ChipFET® (Dual)
1
D1
S1
D1
D2
G1
D1
S2
D2
G2
Marking Code
D2
Bottom View
CD XXX
G1
G2
Lot Traceability
and Date Code
Part #
Code
Ordering Information: Si5920DC-T1-E3 (Lead (Pb)-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
ID
d, e
IS
PD
TJ, Tstg
Limit
8
±5
4a
4a
4a
4a
25
2.6
1.7c
3.12
2.0
2.04b, c
1.3b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t ≤ 5 sec
50
60
Maximum Junction-to-Ambientb, f
°C/W
RthJF
30
40
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73490
S-70914-Rev. C, 07-May-07
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New Product
Si5920DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
VDS
VGS = 0 V, ID = 250 µA
8
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Transconductancea
gfs
Forward
V
8.2
mV/°C
- 2.6
0.3
1
V
± 100
ns
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V, TJ = 55 °C
10
VDS ≤ 5 V, VGS = 4.5 V
25
µA
A
VGS = 4.5 V, ID = 6.8 A
0.025
0.032
VGS = 2.5 V, ID = 6.3 A
0.0285
0.036
VGS = 1.8 V, ID = 2.5 A
0.036
0.045
VGS = 1.5 V, ID = 1.8 A
0.041
0.054
VDS = 4 V, ID = 6.8 A
18
VDS = 4 V, VGS = 0 V, f = 1 MHz
230
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
680
VDS = 4 V, VGS = 5 V, ID = 6.8 A
VDS = 4 V, VGS = 4.5 V, ID = 6.8 A
td(off)
8
12
7.3
11
0.84
nC
1.26
f = 1 MHz
td(on)
tr
pF
140
VDD = 4 V, RL = 0.73 Ω
ID ≅ 5.5 A, VGEN = 4.5 V, Rg = 1 Ω
tf
1.8
2.7
8
12
11
17
18
27
7
11
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
2.6
25
IS = 2.6 A, VGS = 0 V
A
0.8
1.2
Body Diode Reverse Recovery Time
trr
12
18
ns
Body Diode Reverse Recovery Charge
Qrr
3
5
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C
7
5
V
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73490
S-70914-Rev. C, 07-May-07
New Product
Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
25
VGS = 5 thru 2 V
VGS = 1.8 V
I D - Drain Current (A)
I D - Drain Current (A)
20
15
VGS = 1.5 V
10
6
TC = - 55 °C
4
TC = 25 °C
TC = 125 °C
2
5
VGS = 1 V
0
0.0
1.0
2.0
0
0.0
3.0
0.3
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.06
1000
VGS = 1.5 V
900
800
0.05
C - Capacitance (pF)
rDS(on) - D to S On-Resistance (Ω)
0.6
0.04
VGS = 1.8 V
VGS = 2.5 V
0.03
Ciss
700
600
500
400
Coss
300
200
VGS = 4.5 V
Crss
100
0.02
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
rDS(on) vs. Drain Current
Capacitance
7
8
1.6
5
1.4
4
VDS = 4 V
rDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
ID = 6.8 A
VDS = 6.4 V
3
2
VGS = 4.5 V, ID = 5 A
VGS = 1.5 V, ID = 1.8 A
1.2
VGS = 2.5 V, ID = 4.8 A
VGS = 1.8 V, ID = 2.5 A
1.0
0.8
1
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73490
S-70914-Rev. C, 07-May-07
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
rDS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
10.0
TA = 150 °C
TA = 25 °C
1.0
0.1
0.0
0.05
TA = 125 °C
0.04
0.03
TA = 25 °C
0.02
0.2
0.4
0.6
0.8
1.0
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Forward Diode Voltage vs. Temp
rDS(on) vs. VGS vs. Temperature
0.9
50
ID = 250 µA
0.8
40
30
Power (W)
VGS(th) (V)
0.7
0.6
0.5
20
0.4
10
0.3
0.2
- 50
- 25
0
25
50
75
100
125
0
10-4
150
10-3
10-2
TJ - Temperature (°C)
10-1
1
10
100
600
Time (sec)
Threshold Voltage
Single Pulse Power
100
*Limited by rDS(on)
10 ms
I D - Drain Current (A)
10
100 ms
1s
10 s
1
0.1
dc
TA = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
*VGS > minimum V GS at which rDS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 73490
S-70914-Rev. C, 07-May-07
New Product
Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
10
8
Power Dissipation (W)
ID - Drain Current (A)
3
6
Package Limited
4
2
1
2
0
0
0
25
50
75
100
125
150
0
TC - Case Temperature (°C)
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
Current Derating*
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
*The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73490
S-70914-Rev. C, 07-May-07
www.vishay.com
5
New Product
Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73490.
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Document Number: 73490
S-70914-Rev. C, 07-May-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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