Si4845DY New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A)a 0.210 @ VGS = –4.5 V – 2.7 0.345 @ VGS = –2.5 V –2.1 Qg (Typ) 29 2.9 D LITTLE FOOTr Plus Power MOSFET APPLICATIONS D Asynchronous DC/DC Buck COMPLIANT SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A)a 20 0.50 V @ 1 A 2.4 SO-8 A 1 8 K A 2 7 K S 3 6 D G 4 5 D S K D A G Top View P-Channel MOSFET Ordering Information: Si4845DY-T1—E3 (Lead (Pb)–Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage (MOSFET) VDS –20 Reverse Voltage (Schottky) VKA –20 Gate-Source Voltage (MOSFET) VGS "12 TC = 25_C Continuous Drain Current (TJ = 150_C) (MOSFET) TC = 70_C TA = 25_C –2.1 ID –2.1b, c –1.7b, c Continuous Source Current (MOSFET Diode Conduction) IDM TC = 25_C TA = 25_C Average Foward Current (Schottky) IS –1.9 b, c – 1b IFM –7 TC = 25_C Maximum Power Dissipation (Schottky) TC = 70_C TA = 25_C 2.75 1.75 PD W 1.75b, c 1.1b, c TA = 70_C Operating Junction and Storage Temperature Range A –7 –2.4 IF Pulsed Foward Current (Schottky) V – 2.7 TA = 70_C Pulsed Drain Current (MOSFET) Unit TJ, Tstg _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambient (MOSFET and Schottky) RthJA 60 71.5 Maximum Junction-to-Foot (Drain) (MOSFET and Schottky) RthJF 35 45 Unit _C/W Notes a. Based on TC = 25_C. b. Surface Mounted on FR4 Board. c. t v 10 sec. d. Maximum under Steady State conditions is 120 _C/W. Document Number: 73415 S-51110—Rev. B, 13-Jun-05 www.vishay.com 1 Si4845DY New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = –250 mA –20 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage DVDS/TJ DVGS(th)/TJ VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On Drain-Source On-State State Resistancea Forward Transconductancea rDS(on) gfs –25 ID = –250 mA VDS = VGS, ID = –250 mA V mV/_C 2.6 –0.5 VDS = 0 V, VGS = "12 V –1.5 V "100 nA VDS = –20 V, VGS = 0 V –1 VDS = –20 V, VGS = 0 V, TJ = 75_C –10 VDS w –5 V, VGS = –4.5 V –5 mA A VGS = –4.5 V, ID = –2 A 0.175 0.210 VGS = –2.5 V, ID = –1 A 0.285 0.345 VDS = –15 V, ID = –2 A 3.5 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 33 Total Gate Charge Qg 2.9 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 312 VDS = –10 V, VGS = 0 V, f = 1 MHz VDS = –10 V, VGS = –4.5 V, ID = –4 A 63 pF p 4.5 0.72 nC 0.65 W f = 1 MHz 5.5 td(on) 8 13 tr VDD = –10 10 V, RL = 2.5 W ID ^ –4 A, VGEN = –4.5 V, Rg = 1 W 40 60 17 26 tf 11 18 td(on) 3 6 10 16 12 20 8 15 td(off) tr td(off) VDD = –10 10 V, RL = 2.5 W ID ^ –4 A, VGEN = –10 V, Rg = 1 W tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 _C –2.7 –7 IS = –1.9 A, VGS = 0 V IF = –2 A, A di/dt = 100 A/ms, A/ms TJ = 25 _C A –0.85 –1.2 V 24 40 ns 14 20 nC 14 10 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 73415 S-51110—Rev. B, 13-Jun-05 Si4845DY New Product Vishay Siliconix SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Condition Typ Max IF = 1 A Min 0.45 0.50 IF = 1 A, TJ = 125_C 0.36 0.42 0.1 Vr = 30 V 0.04 Vr = 30 V, TJ = 75_C 0.1 2 Vr = 30 V, TJ = 125_C 2 10 Vr = 10 V 62 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73415 S-51110—Rev. B, 13-Jun-05 www.vishay.com 3 Si4845DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics VGS = 5 V VGS = 4.5 V 10 1.2 1.0 I D – Drain Current (A) I D – Drain Current (A) VGS = 4 V 8 VGS = 3.5 V 6 VGS = 3 V 4 VGS = 2.5 V 2 VGS = 2 V 0.8 0.6 0.4 TC = 125_C 0.2 25_C –55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.00 3.0 0.25 VDS – Drain-to-Source Voltage (V) 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 0.5 450 0.4 C – Capacitance (pF) rDS(on) – On-Resistance (mW) 400 VGS = 2.5 V 0.3 VGS = 4.5 V 0.2 Ciss 350 300 250 200 150 Coss 100 0.1 50 Crss 0.0 0 0 1 2 3 4 5 6 0 Gate Charge 12 16 20 On-Resistance vs. Junction Temperature 10 1.6 ID = 4 A 8 1.4 VDS = 5 V rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 8 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 6 VDS = 10 V VDS = 15 V 4 2 0 0.0 www.vishay.com VGS = 4.5 V 1.2 VGS = 2.5 V 1.0 0.8 1.3 2.6 3.9 Qg – Total Gate Charge (nC) 4 4 5.2 6.5 0.6 –50.0 –25.0 0.0 25.0 50.0 75.0 100.0 125.0 150.0 TJ – Junction Temperature (_C) Document Number: 73415 S-51110—Rev. B, 13-Jun-05 Si4845DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 rDS(on) – Drain-to-Source On-Resistance (W) 10 I S – Source Current (A) TJ = 150_C 1 TJ = 25_C 0.1 TA = 150_C 0.6 0.4 TA = 25_C 0.2 0.0 0.01 0.00 0.8 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 50 0.3 40 ID = 250 mA Power (W) VGS(th) (V) 0.2 ID = 5 mA 0.1 30 20 0.0 10 –0.1 –0.2 –50 –25 0 25 50 75 100 125 0 0.001 150 0.01 TJ – Temperature (_C) 0.1 1 10 Time (sec) Safe Operating Area, Junction-to-Ambient 10 *Limited by rDS(on) I D – Drain Current (A) 1 ms 1 10 ms 100 ms 1s 0.1 10 s TA = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73415 S-51110—Rev. B, 13-Jun-05 www.vishay.com 5 Si4845DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Current De-Rating* 3.0 ID – Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 TC – Case Temperature (_C) Power De-Rating, Junction-to-Foot Power De-Rating, Junction-to-Ambient 1.25 3.5 3.0 Power Dissipation (W) Power Dissipation (W) 1.00 2.5 2.0 1.5 1.0 0.75 0.50 0.25 0.5 0.0 0.00 0 25 50 75 100 TC – Case Temperature (_C) 125 150 0 25 50 75 100 125 150 TC – Case Temperature (_C) *The power dissipation Pb is based on TJ(max) = 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73415 S-51110—Rev. B, 13-Jun-05 Si4845DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120_C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 73415 S-51110—Rev. B, 13-Jun-05 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 7 Si4845DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Reverse Current vs. Junction Temperature Forward Voltage Drop 3 1 0.1 1 I F – Forward Current (A) I R – Reverse Current (mA) 20 10 20 V 10 V 0.01 TJ = 150_C TJ = 25_C 0.1 0.001 0.0001 0.01 0 25 50 75 100 125 150 0 TJ – Junction Temperature (_C) 0.2 0.3 0.4 0.5 0.6 VF – Forward Voltage Drop (V) Capacitance 250 CT – Junction Capacitance (pF) 0.1 200 150 Ciss 100 50 0 0 4 8 12 16 20 VKA – Reverse Voltage (V) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73415. www.vishay.com 8 Document Number: 73415 S-51110—Rev. B, 13-Jun-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1