Diode RapidSwitchingEmitterControlledDiode IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries Datasheet IndustrialPowerControl IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries RapidSwitchingEmitterControlledDiode Features: A1 C1 C2 A2 A2 A1 •QualifiedaccordingtoJEDECfortargetapplications •650VEmitterControlledtechnology •Fastrecovery •Softswitching •Lowreverserecoverycharge •Lowforwardvoltageandstableovertemperature •175°Cjunctionoperatingtemperature •Easyparalleling •Pb-freeleadplating;RoHScompliant C Applications: •BoostdiodeinCCMPFC Packagepindefinition: •Pin1-anode(A1) •Pin2andbackside-cathode(C) •Pin3-anode(A2) Key Performance and Package Parameters Type IDP20C65D2 Vrrm If Vf, Tvj=25°C Tvjmax Marking Package 650V 2x 10A 1.6V 175°C C20ED2 PG-TO220-3 2 Rev.2.1,2014-09-18 IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings (electrical parameters per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistances (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 Rev.2.1,2014-09-18 IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries Maximum Ratings (electrical parameters per diode) For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Parameter Symbol Value Unit Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 20.0 10.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 30.0 A Diode surge non repetitive forward current TC=25°C,tp=8.3ms,sinehalfwave IFSM PowerdissipationTC=25°C Ptot 68.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C A 60.0 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm Thermal Resistances (per diode) Parameter Characteristic Symbol Conditions Max. Value Unit Diode thermal resistance,1) junction - case Rth(j-c) 2.20 K/W Thermal resistance junction - ambient Rth(j-a) 62 K/W Electrical Characteristics (per diode), at Tvj = 25°C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. Unit Static Characteristic Diode forward voltage VF IF=10.0A Tvj=25°C Tvj=175°C - 1.60 1.65 2.20 - V Reverse leakage current2) IR VR=650V Tvj=25°C Tvj=175°C - 4.0 250.0 40.0 - µA Electrical Characteristic, at Tvj = 25°C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. - 7.0 - Unit Dynamic Characteristic Internal emitter inductance measured 5mm (0.197 in.) from case 1) 2) LE nH Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. Reverse leakage current per diode specified for operating conditions with zero voltage applied to the other diode. 4 Rev.2.1,2014-09-18 IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries Switching Characteristics (per diode), Inductive Load Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25°C, VR=400V, IF=10.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 28 - ns - 0.16 - µC - 8.6 - A - -740 - A/µs Tvj=25°C, VR=400V, IF=10.0A, diF/dt=350A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 50 - ns - 0.13 - µC - 4.3 - A - -130 - A/µs Diode Characteristic, at Tvj = 25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Switching Characteristics (per diode), Inductive Load Parameter Symbol Conditions Value Unit min. typ. max. Tvj=175°C, VR=400V, IF=10.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 35 - ns - 0.23 - µC - 11.3 - A - -730 - A/µs Tvj=125°C, VR=400V, IF=10.0A, diF/dt=350A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 54 - ns - 0.18 - µC - 5.0 - A - -190 - A/µs Diode Characteristic, at Tvj = 175°C/125°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 5 Rev.2.1,2014-09-18 IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 70 Ptot,POWERDISSIPATION[W] 60 50 40 30 20 10 0 25 50 75 100 125 150 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 5 6 ri[K/W]: 0.022723 0.47244 0.90303 0.744775 0.052669 1.6E-3 τi[s]: 8.0E-6 1.2E-4 6.7E-4 4.5E-3 0.05602283 2.034609 0.01 1E-6 175 1E-5 TC,CASETEMPERATURE[°C] Figure 1. Power dissipation per diode as a function of case temperature (Tvj≤175°C) 0.01 0.1 0.30 Tj=25°C, IF = 10A Tj=175°C, IF = 10A Tj=25°C, IF = 10A Tj=175°C, IF = 10A Qrr,REVERSERECOVERYCHARGE[µC] 60 trr,REVERSERECOVERYTIME[ns] 0.001 Figure 2. Diode transient thermal impedance per diode as a function of pulse width (D=tp/T) 70 50 40 30 20 10 0 1E-4 tp,PULSEWIDTH[s] 0 500 1000 1500 2000 2500 0.25 0.20 0.15 0.10 0.05 0.00 3000 diF/dt,DIODECURRENTSLOPE[A/µs] 0 500 1000 1500 2000 2500 3000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 3. Typical reverse recovery time as a function of Figure 4. Typical reverse recovery charge per diode as diode current slope a function of diode current slope (VR=400V) (VR=400V) 6 Rev.2.1,2014-09-18 IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries 25 0 Tj=25°C, IF = 10A Tj=175°C, IF = 10A -250 20 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj=25°C, IF = 10A Tj=175°C, IF = 10A 15 10 -500 -750 -1000 5 0 -1250 0 500 1000 1500 2000 2500 -1500 3000 0 diF/dt,DIODECURRENTSLOPE[A/µs] 500 1000 1500 2000 2500 3000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 5. Typical reverse recovery current per diode as Figure 6. Typical diode peak rate of fall of rev. rec. a function of diode current slope current per diode as a function of diode (VR=400V) current slope (VR=400V) 30 2.50 Tj=25°C Tj=175°C IF=5A IF=10A IF=20A 2.25 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 25 20 15 10 2.00 1.75 1.50 1.25 1.00 5 0.75 0 0.0 0.5 1.0 1.5 2.0 0.50 2.5 VF,FORWARDVOLTAGE[V] 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typical diode forward current per diode as a function of forward voltage Figure 8. Typical diode forward voltage as a function of junction temperature 7 Rev.2.1,2014-09-18 IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries PG-TO220-3 8 Rev.2.1,2014-09-18 IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries vGE(t) 90% VGE a a 10% VGE b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) CC 2% IC t vCE(t) t2 E = off ∫V t CE t4 x IC x d t E 1 t1 on = ∫V t CE x IC x d t 2% VCE 3 t2 t3 t4 9 t Rev.2.1,2014-09-18 IDP20C65D2 Emitter Controlled Diode Rapid 2 Common Cathode Series Revision History IDP20C65D2 Revision: 2014-09-18, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-09-18 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 Rev. 2.1, 2014-09-18