To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. 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Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. HAT2031T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-529F (Z) 7th. Edition Feb. 2001 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G 65 12 34 5 G S S 2 3 MOS1 S S 6 7 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate HAT2031T Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ± 12 V Drain current ID 3.5 A 28 A Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 3.5 A Pch Note2 1 W Channel dissipation Pch NoteÇR 1.5 W Channel temperature Tch 150 °C Storage temperature Tstg – 55 to + 150 °C Channel dissipation Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. 1 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 20 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ± 12 — — V I G = ± 100 µA, VDS = 0 Gate to source leak current I GSS — — ± 10 µA VGS = ± 10 V, VDS = 0 Zero gate voltege drain current I DSS — — 1 µA VDS = 12 V, VGS = 0 Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, I D = 1m A Static drain to source on state RDS(on) — 0.054 0.070 Ω I D = 2 A, VGS = 4 V Note4 resistance RDS(on) — 0.074 0.098 Ω I D = 2 A, VGS = 2.5 V Note4 Forward transfer admittance |yfs| 4.5 7 — S I D = 2 A, VDS = 10 V Note4 Input capacitance Ciss — 300 — pF VDS = 10 V Output capacitance Coss — 185 — pF VGS = 0 Reverse transfer capacitance Crss — 90 — pF f = 1MHz Turn-on delay time t d(on) — 13 — ns VGS = 4 V, ID = 2 A Rise time tr — 75 — ns VDD ≅ 10 V Turn-off delay time t d(off) — 60 — ns Fall time tf — 75 — ns Body–drain diode forward voltage VDF — 0.85 1.11 V IF = 3.5 A, VGS = 0 Note4 Body–drain diode reverse recovery time t rr — 35 — ns IF = 3.5 A, VGS = 0 diF/ dt = 20 A/µs Note: 2 4. Pulse test HAT2031T Main Characteristics Power vs. Temperature Derating 100 Drain Current 1.5 ive Dr 1.0 Op er ion ive at 0 Dr er 0.5 Op 1 at ion 50 100 150 200 Ambient Temperature Ta (°C) Maximum Safe Operation Area 10 µs 30 I D (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 2 Channel Dissipation Pch (W) 2.0 100 µs 10 3 1 DC Op PW er 1 = at ion s 10 m s (P W 0.3 m < Note 10 Operation in s) 5 0.1 this area is limited by R DS(on) 0.03 Ta = 25 °C 0.01 1 shot Pulse 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 10V 5V 4V 3V Pulse Test 12 2.5 V 8 2.0 V 4 I D (A) 16 20 Drain Current Drain Current I D (A) 20 16 –25°C 25°C Tc = 75°C 12 8 4 V DS = 10 V Pulse Test VGS = 1.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) 3 HAT2031T Static Drain to Source on State Resistance vs. Drain Current 0.16 0.12 ID=2A 0.08 1A 0.04 Static Drain to Source on State Resistance R DS(on) (Ω ) 0.5 A 0.2 Pulse Test 0.1 0.05 2.5 V VGS = 4 V 0.02 0.01 0.005 0.002 0 4 Pulse Test Drain to Source On State Resistance R DS(on) ( Ω) 0.2 2 4 6 Gate to Source Voltage 8 10 Static Drain to Source on State Resistance vs. Temperature 0.2 0.16 I D = 2, 1, 0.5 A 0.12 VGS = 2.5 V 0.08 2, 1, 0.5 A 0.04 4V Pulse Test 0 –40 0.2 V GS (V) 0 40 80 120 160 Case Temperature Tc (°C) 0.5 1 2 Drain Current 5 10 I D (A) 20 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 20 Tc = –25 °C 10 5 75 °C 25 °C 2 1 0.5 0.2 V DS = 10 V Pulse Test 0.5 1 2 5 10 Drain Current I D (A) 20 HAT2031T Body–Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 200 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 100 50 20 10 5 0.1 3000 1000 5 Ciss 300 Coss 100 Crss 30 di/dt = 20 A/µs V GS = 0, Ta = 25°C 0.2 0.5 1 2 Reverse Drain Current VGS = 0 f = 1 MHz 10 0 10 10 20 30 40 50 Drain to Source Voltage VDS DS (V) I DR (A) Switching Characteristics 40 8 V DD = 5 V 10 V 20 V 30 6 V GS 20 10 0 V DS 4 V DD = 20 V 10 V 5V 2 4 6 8 Gate Charge Qg (nc) 2 0 10 1000 Switching Time t (ns) I D = 3.5 A Gate to Source Voltage V DS (V) Drain to Source Voltage 10 V GS (V) Dynamic Input Characteristics 50 500 V GS = 4 V, V DD = 10 V PW = 5 µs, duty < 1 % 200 100 tf 50 tr 20 10 0.1 t d(off) t d(on) 0.2 0.5 1 Drain Current 2 5 10 I D (A) 5 HAT2031T Reverse Drain Current vs. Souece to Drain Voltage 20 Reverse Drain Current I DR (A) Pulse Test 16 12 8 5V V GS = 0 V 4 0 0.4 0.8 1.2 1.6 Source to Drain Voltage Switching Time Test Circuit 2.0 V SD (V) Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 4V 50Ω V DD = 10 V Vout 10% 10% 90% td(on) 6 tr 10% 90% td(off) tf HAT2031T Normalized Transient Thermal Impedance vs. Pulse Width ( 1 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.1 0.2 0.1 0.05 0.01 θ ch – f(t) = γ s (t) • θ ch – f θ ch – f = 166 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.02 0.01 lse u tp 0.001 PDM o sh D= 1 PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width ( 2 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.1 0.01 0.2 0.1 0.05 θ ch – f(t) = γ s (t) • θ ch – f θ ch – f = 210 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.02 0.01 0.001 0.0001 10 µ ot PDM e uls D= p h 1s 100 µ PW T PW T 1m 10 m 100 m 1 10 Pulse Width PW (S) 100 1000 10000 7 HAT2031T 8 HAT2031T Package Dimensions As of January, 2001 Unit: mm 4.40 3.00 3.30 Max 8 5 1 4 0.65 0.20 ± 0.06 1.0 0.13 M 6.40 ± 0.20 0.10 *Dimension including the plating thickness Base material dimension *0.17 ± 0.05 0.15 ± 0.04 1.10 Max 0.805 Max 0.07 +0.03 –0.04 *0.22 +0.08 –0.07 0° – 8° 0.50 ± 0.10 Hitachi Code JEDEC EIAJ Mass (reference value) TTP-8D — — — 9 HAT2031T Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 10