Si7900AEDN Vishay Siliconix New Product Dual N-Channel 20-V (D-S) MOSFET, Common Drain FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.026 @ VGS = 4.5 V 8.5 0.030 @ VGS = 2.5 V 8 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPakr Package - Low-Thermal Resistance, RthJC - Low 1.07-mm Profile D 3000-V ESD Protection 0.036 @ VGS = 1.8 V 7 APPLICATIONS VDS (V) 20 D Protection Switch for 1-2 Li-ion Batteries PowerPAK 1212-8 D S1 3.30 mm 1 2 3.30 mm G1 3 S2 D 7 2.6 kW G2 4 8 D 2.6 kW G1 G2 D 6 D 5 D Bottom View N-Channel S1 S2 N-Channel Ordering Information: Si7900AEDN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V 8.5 6 6.4 4.3 IDM 30 2.9 A 1.4 3.1 1.5 1.6 0.79 TJ, Tstg Unit - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 32 40 65 82 2.2 2.8 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72287 S-31418—Rev. A, 07-Jun-03 www.vishay.com 1 Si7900AEDN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = 250 mA 0.40 Typ Max Unit Static Gate Threshold Voltage VGS(th) Gate Body Leakage Gate-Body IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward Voltagea V "1 mA VDS = 0 V, VGS = "12 V "10 mA VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 85_C 20 VDS = 5 V, VGS = 4.5 V rDS(on) Forward Transconductancea 0.9 VDS = 0 V, VGS = "4.5 V mA 20 A VGS = 4.5 V, ID = 8.5 A 0.020 0.026 VGS = 2.5 V, ID = 8 A 0.022 0.030 VGS = 1.8 V, ID = 7 A 0.026 0.036 gfs VDS = 10 V, ID = 8.5 A 25 VSD IS = 2.9 A, VGS = 0 V 0.65 1.1 10.5 16 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.8 Turn-On Delay Time td(on) 0.85 1.25 1.3 2.0 8.6 13 4.2 6.5 Rise Time VDS = 10 V, VGS = 4.5 V, ID = 6.5 A tr Turn-Off Delay Time VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time 1.9 tf nC ms Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 10,000 1,000 8 I GSS - Gate Current (mA) I GSS - Gate Current (mA) 10 6 4 2 TJ = 150_C 10 1 TJ = 25_C 0.1 0 0.01 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) www.vishay.com 2 100 18 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Document Number: 72287 S-31418—Rev. A, 07-Jun-03 Si7900AEDN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 Transfer Characteristics 30 25 TC = - 55_C 25 25_C 15 I D - Drain Current (A) I D - Drain Current (A) VGS = 5 thru 2 V 20 1.5 V 10 5 20 125_C 15 10 5 0 0 1 2 3 4 0 0.0 5 VDS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( W ) 0.04 VGS = 1.8 V VGS = 2.5 V 0.02 VGS = 4.5 V 2.0 2.5 VDS = 10 V ID = 6.5 A 4 3 2 1 0 0.01 0 5 10 15 20 25 0 30 2 4 ID - Drain Current (A) 1.4 On-Resistance vs. Junction Temperature 8 10 12 Source-Drain Diode Forward Voltage 20 VGS = 4.5 V ID = 8.5 A 10 1.2 1.0 0.8 0.6 - 50 6 Qg - Total Gate Charge (nC) I S - Source Current (A) 1.6 r DS(on) - On-Resistance (W) (Normalized) 1.5 Gate Charge 5 0.05 0.03 1.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.06 0.5 - 25 0 25 50 75 100 TJ - Junction Temperature (_C) Document Number: 72287 S-31418—Rev. A, 07-Jun-03 125 150 TJ = 150_C TJ = 25_C 1 0.1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) www.vishay.com 3 Si7900AEDN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Gate-to-Source Voltage 0.05 Threshold Voltage 0.4 ID = 250 mA 0.2 0.03 V GS(th) Variance (V) r DS(on) - On-Resistance ( W ) 0.04 ID = 8.5 A 0.02 - 0.0 - 0.2 - 0.4 0.01 - 0.6 - 50 0.00 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 150 TJ - Temperature (_C) Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 200 I D - Drain Current (A) 160 Power (W) 120 80 40 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s TC = 25_C Single Pulse dc 0.01 0 0.001 0.01 0.1 1 10 0.1 Time (sec) 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 115_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 t1 t2 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72287 S-31418—Rev. A, 07-Jun-03 Si7900AEDN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.00001 Document Number: 72287 S-31418—Rev. A, 07-Jun-03 0.0001 0.001 0.01 Square Wave Pulse Duration (sec) 0.1 1 www.vishay.com 5