DMN2015UFDE

DMN2015UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
V(BR)DSS
Features
RDS(ON) max
Package
11.6m @ VGS = 4.5V
20V
15mΩ @ VGS = 2.5V

0.6mm profile – ideal for low profile applications

PCB footprint of 4mm2

Low Gate Threshold Voltage
10.5A


Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
9.4A

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
ID max
TA = +25°C
U-DFN2020-6
Type E
Description
Mechanical Data
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications




Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)



General Purpose Interfacing Switch
Power Management Functions
Drain
U-DFN2020-6 Type E
Pin1
Gate
Source
Bottom View
Pin Out
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2015UFDE-7
DMN2015UFDE-13
Notes:
Marking
N4
N4
Reel size (inches)
7
13
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YM
ADVANCE INFORMATION
Product Summary
N4
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
Mar
3
N4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2013
A
Apr
4
May
5
2014
B
Jun
6
1 of 6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
December 2014
© Diodes Incorporated
DMN2015UFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = 2.5V
Steady
State
t<10s
ID
Value
20
±12
10.5
8.5
ID
12.5
10.0
A
ID
9.4
7.5
A
A
11.2
8.8
80
2.5
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Units
V
V
IDM
IS
A
A
A
Thermal Characteristics
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Value
0.66
0.42
189
132
2.03
1.31
61
43
9.3
-55 to +150
PD
RJA
PD
RJA
RJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
—
—
—
—
—
—
1
±100
V
A
nA
VGS = 0V, ID = 250μA
VDS = 16V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
0.5
RDS (ON)
—
|Yfs|
VSD
—
—
1.1
11.6
15
30
50
—
1.2
V
Static Drain-Source On-Resistance
—
9.3
11.4
17
24
11.3
—
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 8.5A
VGS = 2.5V, ID = 8.5A
VGS = 1.8V, ID = 5A
VGS = 1.5V, ID = 3A
VDS = 10V, ID = 8.5A
VGS = 0V, IS = 8.5A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1779
175
154
0.94
19.7
45.6
2.9
3.8
7.4
16.8
43.6
10.9
8.6
3.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
m
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 10V, ID = 8.5A
VDS = 10V, ID = 8.5A
VGS = 4.5V, RG = 1.8Ω
IF = 8.5A, di/dt = 210A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
2 of 6
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December 2014
© Diodes Incorporated
DMN2015UFDE
30
20
VDS = 5.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
16
20
15
10
12
8
TA = 150°C
TA = 125°C
4
5
TA = 85°C
TA = 25°C
0
1
2
V DS, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
0.04
0.03
VGS = 1.5V
0.02
VGS = 1.8V
VGS = 2.5V
0.01
VGS = 4.5V
0
0
4
8
12
16
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.05
TA = -55°C
0
3
0.5
1.0
1.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.045
0.040
0.035
0.030
0.025
0.020
0.015
ID = 8.5A
0.010
ID = 4.5A
0.005
20
0.020
0
0
2
4
6
8
10
12
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.6
VGS = 2.5V
ID = 5A
VGS = 4.5V
0.015
TA = 150°C
TA = 125°C
TA = 85°C
0.010
TA = 25°C
TA = -55°C
0.005
0
2.0
0.050
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ADVANCE INFORMATION
25
0
4
8
12
16
ID, DRAIN CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
20
3 of 6
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1.4
VGS = 4.5V
ID = 10A
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
December 2014
© Diodes Incorporated
1.6
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.020
0.015
VGS = 4.5 V
ID = 5A
0.010
VGS = 10V
ID = 10A
0.005
1.4
1.2
1.0
0.8
ID = 1mA
0.6
ID = 250µA
0.4
0.2
0
-50
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 7 On-Resistance Variation with Temperature
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
20
16
12
TA = 25°C
8
4
Ciss
1,000
Coss
Crss
f = 1MHz
0
0
10
0.2
0.4
0.6
0.8
1.0
V SD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
20
100
10
R DS(on)
Limited
PW = 100µs
8
ID, DRAIN CURRENT (A)
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
DMN2015UFDE
VDS = 10V
ID = 8.5A
6
4
2
0
10
DC
1
PW = 10s
PW = 1s
0.1 TJ(max) = 150°C
PW = 100ms
PW = 10ms
PW = 1ms
TA = 25°C
VGS = 12V
Single Pulse
DUT on 1 * MRP Board
0
5
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Charge
DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
0.01
0.01
4 of 6
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0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
December 2014
© Diodes Incorporated
DMN2015UFDE
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
R JA(t) = r(t) * R JA
R JA = 61°C/W
Duty Cycle, D = t1/ t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
A1
A
A3
D
b1
K1
D2
E E2
L1
L(2X)
K2
Z(4X)
e
b(6X)
U-DFN2020-6
Type E
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0
0.05
0.03
A3
—
—
0.15
b
0.25
0.35
0.30
b1
0.185 0.285 0.235
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
E
1.95
2.05
2.00
E2
1.40
1.60
1.50
e
—
—
0.65
L
0.25
0.35
0.30
L1
0.82
0.92
0.87
K1
—
—
0.305
K2
—
—
0.225
Z
—
—
0.20
All Dimensions in mm
Suggested Pad Layout
Dimensions
Y3 Y2
X2
C
X
X1
X2
Y
Y1
Y2
Y3
Y1
X1
X (6x)
DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
C
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
Y (2x)
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December 2014
© Diodes Incorporated
DMN2015UFDE
ADVANCE INFORMATION
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
6 of 6
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December 2014
© Diodes Incorporated