STMICROELECTRONICS STS17NH3LL

STS17NH3LL
N-channel 30 V - 0.004 Ω - 17 A - SO-8
STripFET™ Power MOSFET for DC-DC conversion
Features
Type
VDSS
RDS(on)
ID
STS17NH3LL
30V
<0.0057Ω
17A(1)
1. This value is rated according to Rthj-pcb
■
Optimal RDS(on) x Qg trade-off @ 4.5 V
■
Conduction losses reduced
■
Improved junction-case thermal resistance
■
Low threshold device
SO-8
Applications
■
Switching application
Figure 1.
Description
Internal schematic diagram
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This process coupled to unique metallization
techniques realizes the most advanced low
voltage Power MOSFET in SO-8 ever produced.
Table 1.
Device summary
Order code
Marking
Package
Packaging
STS17NH3LL
17H3LL-
SO-8
Tape & reel
December 2007
Rev 3
1/12
www.st.com
12
Contents
STS17NH3LL
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
................................................ 8
STS17NH3LL
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
30
V
± 16
V
Drain current (continuous) at TC = 25°C
17
A
Drain current (continuous) at TC = 100°C
10.6
A
VDS
Drain-source voltage (VGS = 0)
VGS
Gate- source voltage
ID
(1)
ID
IDM
(2)
Drain current (pulsed)
68
A
Ptot
(1)
Total dissipation at TC = 25°C
2.7
W
-55 to 150
°C
Value
Unit
47
°C/W
Value
Unit
Tstg
Tj
Storage temperature
Operating junction temperature
1. This value is rated according to Rthj-pcb
2. Pulse width limited by safe operating area
Table 3.
Thermal resistance
Symbol
Rthj-pcb(1)
Parameter
Thermal resistance junction-ambient max
1. When mounted on 1inch² FR-4 board, 2oz of Cu and t< 10sec
Table 4.
Symbol
Avalanche data
Parameter
IAV
Not-repetitive avalanche current
7.5
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=IAV)
150
mJ
3/12
Electrical characteristics
2
STS17NH3LL
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 250 µA, VGS = 0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating @125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 16 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 8.5 A
VGS = 4.5 V, ID = 8.5 A
V(BR)DSS
Table 6.
Symbol
Min
Typ.
Max
30
Unit
V
1
10
µA
µA
±100
nA
1
V
0.004
0.005
0.0057
0.0075
Ω
Ω
Typ.
Max
Unit
Dynamic
Parameter
Test conditions
Min
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS=25 V, f=1 MHz
VGS = 0
1810
565
41
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID=17 A
VGS=4.5 V
(see Figure 14)
18
4.8
5.3
24
nC
nC
nC
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
1.5
3
Ω
RG
4/12
On/off states
0.5
pF
pF
pF
STS17NH3LL
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min
Typ.
Max Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 15 V, ID = 8.5 A
RG = 4.7 Ω , VGS = 10 V
(see Figure 16)
8
65
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 15 V, ID = 8.5 A
RG = 4.7 Ω , VGS = 10 V
(see Figure 16)
38
20
ns
ns
Table 8.
Symbol
ISD
ISDM
VSD (1)
trr
Qrr
IRRM
Source drain diode
Parameter
Test conditions
Min
Typ.
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 17 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A,
di/dt = 100 A/µs
VDD = 15 V, Tj = 25°C
(see Figure 15)
22
32
1.9
Max Unit
17
68
A
A
1.3
V
ns
nC
A
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STS17NH3LL
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Normalized BVDSS vs temperature
Figure 7.
Static drain-source on resistance
6/12
STS17NH3LL
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Figure 10. Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
7/12
Test circuit
3
STS17NH3LL
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 17. Unclamped inductive waveform
8/12
Figure 18. Switching time waveform
STS17NH3LL
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STS17NH3LL
SO-8 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
TYP.
1.75
0.1
MAX.
0.068
0.25
a2
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
c1
45 (typ.)
1.27
e
e3
0.050
3.81
0.150
F
3.8
4.0
0.14
L
0.4
1.27
0.015
M
S
10/12
MIN.
0.6
0.157
0.050
0.023
8 (max.)
STS17NH3LL
5
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
01-Aug-2006
1
First release
09-Jan-2007
2
Complete version
12-Dec-2007
3
Inserted new Table 4: Avalanche data
11/12
STS17NH3LL
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