DMG4822SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) max ID max TA = +25°C 30V 20mΩ @ VGS = 10V 10A NEW PRODUCT Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Input Capacitance Low Input/Output leakage Low Gate Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications General Purpose Interfacing Switch Power Management Functions DC-DC Converters Analog Switch Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) D2 D1 S1 D1 G1 D1 S2 D2 G2 D2 G2 G1 S1 TOP VIEW Internal Schematic N-Channel MOSFET S2 N-Channel MOSFET Ordering Information (Note 4) Part Number DMG4822SSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 G4822SD G4822SD YY WW YY WW 1 4 Chengdu A/T Site DMG4822SSD Document number: DS35403 Rev. 2 - 2 1 4 = Manufacturer’s Marking G4822SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) Shanghai A/T Site 1 of 7 www.diodes.com February 2014 © Diodes Incorporated DMG4822SSD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State Symbol VDSS VGSS Value 30 ±25 Units V V ID 10 6.6 A IDM IAR EAR 60 1.68 12.8 A A mJ TA = +25°C TA = +85°C NEW PRODUCT Pulsed Drain Current (Note 6) Avalanche Current (Note 7 & 8) Repetitive Avalanche Energy L= 0.3mH (Note 7 & 8) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 1.42 88.4 -55 to +150 Units W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(th) RDS (ON) 13.4 19.5 20 0.4 3 20 31 1.0 V Static Drain-Source On-Resistance 1 - VDS = VGS, ID = 250μA VGS = 10V, ID = 8.5A VGS = 4.5V, ID = 6A VDS = 5V, ID = 8.5A VGS = 0V, IS = 1A - 478.9 96.7 61.4 1.1 5 10.5 1.8 1.6 2.9 7.9 14.6 3.1 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - - mΩ mS V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 16V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V,f = 1MHz VGS = 10V, VDS = 15V, ID =8.5A VDS= 15V, VGS = 10V, RL = 1.8Ω, RG = 3Ω, 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1% 7. Repetitive rating, pulse width limited by junction temperature. 8. IAR and EAR rating are based on low frequency and duty cycles to keep Tj=+25°C 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMG4822SSD Document number: DS35403 Rev. 2 - 2 2 of 7 www.diodes.com February 2014 © Diodes Incorporated DMG4822SSD 20 30 VDS= 5.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 15 20 10 10 Ave VGS(V) @ 125°C Ave VGS(V) @ 85°C 5 5 Ave VGS(V) @ 25°C 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic 0.05 RDS(ON)( ) Ave @ VGS=3.5V 0.04 0.03 RDS(ON)( ) Ave @ VGS=4.5V 0.02 RDS(ON)( ) Ave @ VGS=10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.7 RDS(ON)() @ VGS=10V, ID=10A 1.5 1.3 1.1 RDS(ON)( ) @ VGS=4.5V, ID=5A 0.9 0.7 0.5 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMG4822SSD Document number: DS35403 Rev. 2 - 2 Ave VGS(V) @ 55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 15 Ave VGS(V) @ 150°C 3 of 7 www.diodes.com 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE Fig.2 Typical Transfer Characteristics 4 0.04 VGS= 10V Ave RDS(ON) () @ 150°C 0.03 Ave RDS(ON) () @ 125°C Ave RDS(ON)() @ 85°C 0.02 Ave RDS(ON)() @ 25°C Ave RDS(ON)() @ -55°C 0.01 0 0 5 10 15 20 25 ID, DRAIN CURRENT Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 0.05 RDS(ON)( ) @ VGS=4.5V, ID=5A 0.04 0.03 0.02 RDS(ON)( ) @ VGS=10V, ID=10A 0.01 0 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature February 2014 © Diodes Incorporated NEW PRODUCT DMG4822SSD DMG4822SSD Document number: DS35403 Rev. 2 - 2 4 of 7 www.diodes.com February 2014 © Diodes Incorporated DMG4822SSD 20 2 18 IS, SOURCE CURRENT (V) VGS(th), Gate Threshold Voltage 16 1.6 14 12 1.4 Vth (V) @ ID=1mA Vth (V) @ ID=250µA 10 1.2 1 0.8 0.6 -50 8 VSD (V)@TA=25°C 6 4 2 -25 0 25 50 75 100 125 0 0.2 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig.8 Diode Forward Voltage vs. Current 1000 10000 CT, JUNCTION CAPACITANCE (pF) IDSS, DRAIN LEAKAGE CURRENT (nA) Ciss Ave(pF) IDSS(nA) Ave @ 150°C 1000 IDSS(nA) Ave @ 125°C 100 IDSS(nA) Ave @ 85°C 10 IDSS(nA) Ave @ 25°C Coss Ave(pF) 100 Crss Ave(pF) f=1MHz 1 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs. Voltage 10 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance 20 10 VDS=15V, I D=10A 8 VGS (V) NEW PRODUCT 1.8 6 4 2 0 0 2 4 6 8 QG - (nC) Fig. 11 Gate Charge DMG4822SSD Document number: DS35403 Rev. 2 - 2 10 12 5 of 7 www.diodes.com February 2014 © Diodes Incorporated DMG4822SSD r(t), TRANSIENT THERMAL RESISTANCE r(t) @ D=0.5 r(t) @ D=0.9 r(t) @ D=0.3 r(t) @ D=0.7 0.1 r(t) @ D=0.1 r(t) @ D=0.05 r(t) @ D=0.02 0.01 r(t) @ D=0.01 r(t) @ D=0.005 Rthja(t)=r(t) * Rthja Rthja=90 C/W Duty Cycle, D=t1 / t2 r(t) @ D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Fig. 12 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 NEW PRODUCT 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4822SSD Document number: DS35403 Rev. 2 - 2 6 of 7 www.diodes.com February 2014 © Diodes Incorporated DMG4822SSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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