ZXMS6004DT8

A Product Line of
Diodes Incorporated
ZXMS6004DT8
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET™ MOSFET
SUMMARY
Continuous drain source voltage 60 V
On-state resistance
500 mΩ
Nominal load current (VIN = 5V)
1.2 A
Clamping Energy
210 mJ
SM8 Package
DESCRIPTION
The ZXMS6004DT8 is a dual self protected low side MOSFET
with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level
functionality independently per channel. The ZXMS6004DT8 is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
FEATURES
•
•
•
•
•
•
•
•
•
Compact dual package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
ORDERING INFORMATION
DEVICE
PART
MARK
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY PER
REEL
ZXMS6004DT8TA
ZXMS
6004D
7
12 embossed
1,000 units
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
1 of 9
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June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FUNCTIONAL BLOCK DIAGRAM
D1/2
Over Voltage
Protection
dV/dt
limitation
IN1/2
Human
body ESD
protection
Over temperature
protection
Logic
Over current
protection
S1/2
APPLICATIONS AND INFORMATION
•
Two completely isolated independent channels
•
Especially suited for loads with a high in-rush current such as lamps and motors.
•
All types of resistive, inductive and capacitive loads in switching applications.
•
μC compatible power switch for 12V and 24V DC applications.
•
Automotive rated.
•
Replaces electromechanical relays and discrete circuits.
•
Linear Mode capability - the current-limiting protection circuitry is designed to de-activate
at low VDS to minimise on state power dissipation. The maximum DC operating current is
therefore determined by the thermal capability of the package/board combination, rather
than by the protection circuitry. This does not compromise the product’s ability to selfprotect at low VDS.
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
2 of 9
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Continuous Drain-Source Voltage
VDS
60
V
Drain-Source Voltage for short circuit protection
VDS(SC)
36
V
Continuous Input Voltage
VIN
-0.5 ... +6
V
Continuous Input Current
IIN
mA
-0.2V≤VIN≤6V
No limit
VIN<-0.2V or VIN>6V
│IIN │≤2
Operating Temperature Range
Tj,
-40 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Power Dissipation at TA =25°C (a)(d)
PD
1.16
W
9.28
mW/°C
1.67
W
13.3
mW/°C
2.13
W
17
mW/°C
Linear Derating Factor
PD
Power Dissipation at TA =25°C (a)(e)
Linear Derating Factor
PD
Power Dissipation at TA =25°C (b)(d)
Linear Derating Factor
Pulsed Drain Current @ VIN=3.3V (c)
IDM
2
A
Pulsed Drain Current @ VIN=5V (c)
IDM
2.5
A
Continuous Source Current (Body Diode) (a)
IS
1
A
Pulsed Source Current (Body Diode) (c)
ISM
5
A
Unclamped single pulse inductive energy, Tj=25°C,
ID=0.5A, VDD=24V
EAS
210
mJ
Electrostatic Discharge (Human Body Model)
VESD
4000
V
Charged Device Model
VCDM
1000
V
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
RθJA
108
°C/W
Junction to Ambient (a)(e)
RθJA
75
°C/W
Junction to Ambient (b)(d)
RθJA
58.7
°C/W
Junction to Case (f)
RθJC
26.5
°C/W
NOTES
(a) For a dual device surface mounted on a 25mm x 25mm FR4 PCB single sided 1oz weight copper split
down the middle on 1.6mm FR4 board, in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ≤ 10sec
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs – pulse width limited by junction
temperature. Refer to transient Thermal Impedance Graph.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead)
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
3 of 9
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June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
RECOMMENDED OPERATING CONDITIONS
The ZXMS6004DT8 is optimised for use with µC operating from 3.3V and 5V supplies.
Symbol
VIN
TA
VIH
VIL
VP
Description
Input voltage range
Ambient temperature range
High level input voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral supply voltage (voltage to which load is referred)
Min
0
-40
3
0
0
Max
5.5
125
5.5
0.7
36
Units
V
°C
V
V
V
Max Power Dissipation (W)
ID Drain Current (A)
CHARACTERISTICS
Limited by Over-Current Protection
Limited
by RDS(on)
1
DC
1s
100m
10m
100ms
Single Pulse
T amb=25°C
See Note (a)(d)
10ms
1ms
Limit of s/c protection
1
10
1.6
1.4
2 active die
1.2
1.0
0.8
0.6
0.4
1 active die
0.2
0.0
0
25
VDS Drain-Source Voltage (V)
100
Tamb=25°C
See Note (a)(d)
80
D=0.5
60
40
Single Pulse
D=0.2
D=0.05
20
D=0.1
0
100µ
1m
10m 100m
1
10
125
150
100
1k
Single Pulse
T amb=25°C
See Note (a)(d)
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Document Number DS32245 Rev. 1 - 2
100
100
Pulse Width (s)
ZXMS6004DT8
75
Derating Curve
Maximum Power (W)
Thermal Resistance (°C/W)
Safe Operating Area
120
50
Temperature (°C)
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Pulse Power Dissipation
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Drain-Source Clamp Voltage
VDS(AZ)
60
65
70
V
ID=10mA
Off state Drain Current
IDSS
500
nA
VDS=12V, VIN=0V
Off state Drain Current
IDSS
1
uA
VDS=36V, VIN=0V
Input Threshold Voltage
VIN(th)
1
1.5
V
VDS=VGS, ID=1mA
Input Current
IIN
60
100
μA
VIN=+3V
Input Current
IIN
120
200
μA
VIN=+5V
220
μA
VIN=+5V
Static Characteristics
0.7
Input Current while over
temperature active
Static Drain-Source On-State
Resistance
RDS(on)
400
600
mΩ
VIN=+3V, ID=0.5A
Static Drain-Source On-State
Resistance
RDS(on)
350
500
mΩ
VIN=+5V, ID=0.5A
Continuous Drain Current (a)(e)
ID
0.9
A
VIN=3V; TA=25°C
Continuous Drain Current (a)(e)
ID
1.0
A
VIN=5V; TA=25°C
Continuous Drain Current (a)(d)
ID
1.1
A
VIN=3V; TA=25°C
Continuous Drain Current (a)(d)
ID
1.2
A
VIN=5V; TA=25°C
Current Limit (g)
ID(LIM)
0.7
1.7
A
VIN=+3V,
Current Limit (g)
ID(LIM)
1
2.2
A
VIN=+5V
VDD=12V, ID=0.5A,
VGS=5V
Dynamic Characteristics
Turn On Delay Time
td(on)
5
μs
Rise time
tr
10
μs
Turn Off Delay Time
td(off)
45
μs
Fall Time
ff
15
μs
Notes:
(g) The drain current is restricted only when the device is in saturation (see graph ‘typical output
characteristic’). This allows the device to be used in the fully on state without interference from
the current limit. The device is fully protected at all drain currents, as the low power dissipation
generated outside saturation makes current limit unnecessary.
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
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PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
TJT
150
175
°C
10
°C
CONDITIONS
Over-temperature Protection
Thermal Overload Trip
Temperature (h)
Thermal hysteresis (h)
Note:
(h)
Over-temperature protection is designed to prevent device destruction under fault conditions.
Fault conditions are considered as “outside” normal operating range, so this part is not designed
to withstand over-temperature for extended periods..
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
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TYPICAL CHARACTERISTICS
VIN
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
2
1
IIN Input Current (μA)
ID Drain Current (A)
120
TA = 25°C
3
0
100
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9 10 11 12
0
1
VDS Drain-Source Voltage (V)
4
5
1.4
1.4
ID = 0.5A
1.2
1.0
0.8
0.6
TJ = 150°C
0.4
0.2
0.0
1.5
TJ = 25°C
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VTH Threshold Voltage (V)
RDS(on) On-Resistance (Ω)
3
Input Current vs Input Voltage
Typical Output Characteristic
VIN = VDS
1.3
ID = 1mA
1.2
1.1
1.0
0.9
0.8
-75 -50 -25
0
25
50
75 100 125 150
TJ Junction Temperature (°C)
VIN Input Voltage (V)
On-Resistance vs Input Voltage
Threshold Voltage vs Temperature
10
0.9
0.8
0.7
VIN = 3V
0.6
0.5
0.4
VIN = 5V
0.3
0.2
-75 -50 -25
0
25
50
75 100 125 150
IS Source Curent (A)
RDS(on) On-Resistance (Ω)
2
VIN Input Voltage (V)
TJ=150°C
1
TJ=25°C
0.1
0.01
0.4
On-Resistance vs Temperature
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
TJ Junction Temperature (°C)
Reverse Diode Characteristic
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Drain-Source Voltage (V)
Drain-Source Voltage (V)
A Product Line of
Diodes Incorporated
12
ID=500mA
10
VDS
8
6
VIN
4
2
0
-50
0
50
100
150
200
250
300
12
ID=500mA
VDS
10
8
6
4
VIN
2
0
-50
0
50
100
150
200
250
300
Time (μs)
Time (μs)
Switching Speed
Switching Speed
ID Drain Current (A)
4.0
VIN = 5V
3.5
VDS = 15V
3.0
RD = 0Ω
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
Time (ms)
Typical Short Circuit Protection
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
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IMPORTANT NOTICE
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DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS
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without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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provided in the
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Copyright © 2010, Diodes Incorporated
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ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
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