DMP1022UFDE

DMP1022UFDE
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-12V
Features








ID Max
RDS(ON) Max
TA = +25°C
16mΩ @ VGS = -4.5V
-9.1A
21.5mΩ @ VGS = -2.5V
-7.9A
26mΩ @ VGS = -1.8V
-7.0A
32mΩ @ VGS = -1.5V
-6.3A
0.6mm Profile – Ideal For Low Profile Applications
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected to 3KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This MOSFET is designed specifically for use in battery management
applications.


Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4



Weight: 0.0065 grams (Approximate)
U-DFN2020-6
Pin1
D
6 D
D 1
5 D
D 2
4 S
S
G 3
ESD PROTECTED
G
Gate Protection
Diode
Pin Out
Bottom View
Bottom View
S
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP1022UFDE-7
Notes:
Marking
P4
Reel size (inches)
7
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
~
~
Jan
1
Feb
2
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
2015
C
Mar
3
2016
D
Apr
4
YM
P4
P4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2017
E
May
5
2018
F
Jun
6
1 of 8
www.diodes.com
2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
2022
J
Nov
N
2023
K
Dec
D
October 2015
© Diodes Incorporated
DMP1022UFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
t<5s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
ID
-11.2
-9.0
-90
-2.5
-7.1
-50
ID
IDM
TA = +25°C
TC = +25°C
Continuous Source-Drain Diode Current
Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%)
Value
-12
±8
-9.1
-7.2
IS
ISM
Units
V
V
A
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
TA = +25°C
TA = +70°C
Steady state
t<5s
TA = +25°C
TA = +70°C
Steady state
t<5s
Steady state
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.66
0.42
189
123
2.03
1.3
61
40
9.3
-55 to +150
Units
W
°C/W
W
°C/W
°C
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
2 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP1022UFDE
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current (TJ = +25°C)
Zero Gate Voltage Drain Current (TJ = +55°C) (Note 8)
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)Temperature Coefficient
On-State Drain Current
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IDSS
IGSS
-12
—
—
—
—
—
—
—
—
-200
-2
±2
V
nA
µA
µA
VGS = 0V, ID = -250μA
VDS = -12V, VGS = 0V
VDS = -12V, VGS = 0V
VGS = ±5V, VDS = 0V
VGS(th)
ΔVGS(th)/ΔTJ
ID(ON)
-0.35
—
-10
—
|Yfs|
VSD
—
—
-0.8
—
—
16
21.5
26
32
160
—
-1.2
V
mV/°C
A
RDS(ON)
—
2.5
—
12
15
20
23
80
12
-0.8
VDS = VGS, ID = -250μA
ID = -250μA
VGS = -4.5V, VDS < -5A
VGS = -4.5V, ID = -8.2A
VGS = -2.5V, ID = -7.2A
VGS = -1.8V, ID = -6.6A
VGS = -1.5V, ID = -1A
VGS = -1.2V, ID = -1A
VDS = -4V, ID = -8.2A
VGS = 0V, IS = -8A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
2,953
756
678
8.6
28.4
25.3
2.3
7.2
20
28
117
93
—
—
—
18
42.6
38
—
—
30
42
176
139
VSD
—
—
—
—
—
—
—
—
-0.8
—
—
—
28
10
18
13
-1.2
-2.5
-7.1
-50
56
—
—
26
Continuous Source-Drain Diode Current (Note 6)
IS
Pulse Diode Forward Current (Note 8)
Bodyy Diode Reverse Recovery Time (Note 8)
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Body Diode Reverse Recovery Charge (Note 8)
ISM
trr
ta
tb
Qrr
Notes:
mΩ
S
V
pF
Test Condition
VDS = -4V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -5V, VDS = -4, ID = -10A
nC
VGS = -4.5V, VDS = -4V,
ID = -10A
nS
V
A
nS
VDS = -4V, VGS = -4.5V,
RG = 1Ω, RL = 0.4Ω, ID = -9.8A
VGS = 0V, IS = -9.8A
TA = +25°C
TC = +25°C
—
IS = -9.8A, dI/dt = 100A/μs
nC
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
3 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP1022UFDE
100
100
P(PK), PEAK TRANSIENT POIWER (W)
-ID, DRAIN CURRENT (A)
PW = 10µs
RDS(on)
Limited
10
DC
PW = 10s
PW = 1s
1
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
0.1
0.01
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
90
Single Pulse
RJA = 61 C/W
RJA(t) = r(t) * RJA
TJ - TA = P * RJA(t)
80
70
60
50
40
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
100
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RJA(t)=r(t) * RJA
RJA=61°C/W
Duty Cycle, D=t1/ t2
D = 0.005
Single Pulse
0.001
0.00001
0.0001
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
4 of 8
www.diodes.com
10
100
1,000
October 2015
© Diodes Incorporated
DMP1022UFDE
30
20
VGS = -8.0V
VDS = -5.0V
VGS = -4.5V
16
VGS = -2.5V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
25
VGS = -2.0V
20
VGS = -1.8V
15
VGS = -1.5V
10
12
8
TA = 150C
4
5
TA = 125C
TA = -55C
VGS = -1.2V
0
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 4 Typical Output Characteristics
5
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
10
15
20
25
-ID, DRAIN SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.3
1.1
0.9
0.7
Datasheet number: DS35477 Rev. 11 - 2
3.0
VGS= -4.5V
0.025
0.020
TA = 150C
TA = 125C
0.015
TA = 85 C
TA = 25C
0.010
TA = -55C
0.005
0
4
8
12
16
-ID, DRAIN SOURCE CURRENT (A)
Fig. 7 Typical On-Resistance vs.
Drain Current and Temperature
20
0.04
0.03
VGS = -2.5V
ID = -5A
0.02
VGS = -4.5V
ID = -10A
0.01
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Fig. 8 On-Resistance Variation with Temperature
DMP1022UFDE
0.5
1.0
1.5
2.0
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristics
0.030
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.5
0.5
-50
0
30
1.7
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Normalized)
0
R DS(ON), DRAIN-SOURCE ON-RESISTANCE( )
RDS(ON),DRAIN-SOURCE ON-RESISTANCE()
0
TA = 85C
TA = 25C
5 of 8
www.diodes.com
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 9 On-Resistance Variation with Temperature
October 2015
© Diodes Incorporated
DMP1022UFDE
20
1.2
-IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE(V)
1.4
1.0
0.8
0.6
0.4
12
8
4
0.2
0
-50
0
0.4
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
100,000
4,000
3,500
f = 1MHz
-IDSS, LEAKAGE CURRENT (nA)
CT, JUNCTION CAPACITANCE (pF)
16
3,000
TA = 150°C
10,000
Ciss
2,500
2,000
1,500
1,000
Coss
T A = 125°C
1,000
TA = 85°C
500
Crss
0
0
3
6
9
12
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Junction Capacitance
TA = 25°C
15
100
0
2
4
6
8
10
12
-V DS, DRAIN-SOURCE VOLTAGE(V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
VGS, GATE-SOURCE VOLTAGE (V)
8
6
4
2
0
0
5
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
6 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP1022UFDE
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
U-DFN2020-6
(Type E)
A3
A1
A
D
b1
K1
D2
E E2
L1
L(2X)
K2
Z(4X)
e
U-DFN2020-6
(Type E)
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0
0.05
0.03
A3
0.15


b
0.25
0.35
0.30
b1
0.185 0.285 0.235
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
E
1.95
2.05
2.00
E2
1.40
1.60
1.50
e
0.65


L
0.25
0.35
0.30
L1
0.82
0.92
0.87
K1
0.305


K2
0.225


Z
0.20


All Dimensions in mm
b(6X)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
U-DFN2020-6
(Type E)
Dimensions
Y3 Y2
X2
Y1
X1
X (6x)
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
C
C
X
X1
X2
Y
Y1
Y2
Y3
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
Y (2x)
7 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP1022UFDE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
8 of 8
www.diodes.com
October 2015
© Diodes Incorporated