DMN1019UFDE Green 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(ON) max 12V 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C U-DFN2020-6 Type E 11A 10 9A 8A 5A • • • • • • • • 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • Mechanical Data • • Case: U-DFN2020-6 Type E Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.007 grams (approximate) • • Applications • Load Switching Battery Management Application Power Management Functions Drain U-DFN2020-6 Type E Pin1 Gate ESD PROTECTED Gate Protection Diode Pin Out Bottom View Bottom View Source Equivalent Circuit Ordering Information (Note 4) Marking N7 Part Number DMN1019UFDE-7 Notes: Reel size (inches) 7 Quantity per reel 3,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information YM ADVANCE INFORMATION Product Summary N7 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN1019UFDE Datasheet number: DS35561 Rev. 4 - 2 Mar 3 N7 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 7 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D July 2012 © Diodes Incorporated DMN1019UFDE Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State t<5s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 12 ±8 11 9 ID Units V V A 14 11 3.0 100 ID Maximum Continuous Body Diode Current Pulsed Drain Current (10µs pulse, duty cycle = 1%) IS IDM A A A Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady state t<5s TA = +25°C TA = +70°C Steady state t<5s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range 80 70 PD RθJA °C/W W °C/W °C RDS(on) Limited 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation DMN1019UFDE RθJA W PW = 10µs Single Pulse RθJA = 178°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) DUT on MRP 60 Datasheet number: DS35561 Rev. 4 - 2 PD Units 100 ID , DRAIN CURRENT (A) 90 Value 0.69 0.44 182 118 2.17 1.38 58 38 10 -55 to +150 RθJc TJ, TSTG 100 P(PK), PEAK TRANSIENT POIWER (W) ADVANCE INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 PW = 1ms TJ(max) = 150°C TA = 25°C Single Pulse DUT on 1 * MRP Board VGS = 8V 0.01 0.01 2 of 7 www.diodes.com PW = 100µs 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 SOA, Safe Operation Area 100 July 2012 © Diodes Incorporated DMN1019UFDE ADVANCE INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 178°C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 10 100 1,000 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 12 — — — — — — 1 ±2 V µA µA VGS = 0V, ID = 250μA VDS = 12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.35 RDS (ON) — |Yfs| VSD — — 0.8 10 12 14 18 41 — 1.2 V Static Drain-Source On-Resistance — 7 8 10 14 28 28 0.8 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 9.7A VGS = 2.5V, ID = 9A VGS = 1.8V, ID = 8.1A VGS = 1.5V, ID = 4.5A VGS = 1.2V, ID = 2.4A VDS = 4V, ID = 9.7A VGS = 0V, IS = 10A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — 2425 396 375 1.1 50.6 27.3 3.4 5.2 7.6 22.2 57.6 16.8 — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 8V Total Gate Charge VGS = 4.5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V Test Condition pF VDS = 10V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 4V, ID = 10A ns VDD = 4V, VGS = 10V, ID = 10A RG = 1Ω, RL = 0.4Ω 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN1019UFDE Datasheet number: DS35561 Rev. 4 - 2 3 of 7 www.diodes.com July 2012 © Diodes Incorporated 30 25 25 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 20 15 10 5 VDS = 5.0V 20 15 TA = 150°C 10 T A = 125°C TA = 85°C 5 TA = 25°C 0 0.5 1.0 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic 0.012 VGS = 4.5V 0.008 VGS = 2.5V VGS = 1.8V 0.004 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.016 TA = -55°C 0 2.0 0.4 0.8 1.2 1.6 VGS, GATE-SOURCE VOLTAGE Fig. 5 Typical Transfer Characteristics 2.0 0.020 0.016 ID = 9.7A 0.012 ID = 4.5A 0.008 0.004 30 0.020 0 0 1 2 3 4 5 6 7 8 VGS, GATE VOLTAGE (V) Fig. 7 Typical On-Resistance vs. Gate Voltage 2.0 VGS= 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION DMN1019UFDE 0.016 0.012 TA = 150°C TA = 125°C TA = 85°C 0.008 TA = 25°C TA = -55°C 0.004 0 0 5 10 15 20 25 ID, DRAIN CURRENT Fig. 8 Typical On-Resistance vs. Drain Current and Temperature DMN1019UFDE Datasheet number: DS35561 Rev. 4 - 2 30 4 of 7 www.diodes.com 1.8 1.6 VGS = 4.5V ID = 5A 1.4 1.2 VGS = 10V ID = 10A 1.0 0.8 0.6 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 9 On-Resistance Variation with Temperature July 2012 © Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.2 0.020 0.016 VGS = 4.5V ID = 5A 0.012 0.008 VGS = 10 V ID = 10A 0.004 1.0 0.8 0.6 ID = 1mA 0.4 ID = 250µA 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 11 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 10 On-Resistance Variation with Temperature 10,000 30 CT, JUNCTION CAPACITANCE (pF) f = 1MHz IS, SOURCE CURRENT (V) 25 20 15 10 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig.12 Diode Forward Voltage vs. Current Ciss 1,000 T A = 25°C 5 1.2 Coss C rss 100 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Junction Capacitance 12 8 VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN1019UFDE VDS = -4V ID = -10A 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate Charge DMN1019UFDE Datasheet number: DS35561 Rev. 4 - 2 5 of 7 www.diodes.com July 2012 © Diodes Incorporated DMN1019UFDE ADVANCE INFORMATION Package Outline Dimensions A1 A A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 — — 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e — — 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 — — 0.305 K2 — — 0.225 Z — — 0.20 All Dimensions in mm Suggested Pad Layout Dimensions Y3 Y2 X2 Y1 X1 X (6x) DMN1019UFDE Datasheet number: DS35561 Rev. 4 - 2 C C X X1 X2 Y Y1 Y2 Y3 Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) 6 of 7 www.diodes.com July 2012 © Diodes Incorporated DMN1019UFDE ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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