DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V -6.3A -12V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm Low Gate Threshold Voltage Fast Switching Speed ESD Protected to 3KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description • • This MOSFET has been designed specifically for use in battery management applications. Case: U-DFN2020-6 Type E Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (approximate) • • • Drain U-DFN2020-6 Type E Pin1 6 D D 1 5 D D 2 4 S Gate Protection Diode G 3 Pin Out Bottom View Bottom View ESD PROTECTED S Gate Source Internal Schematic Ordering Information (Note 4) Part Number DMP1022UFDE-7 Notes: Marking P4 Reel size (inches) 7 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. P4 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP1022UFDE Datasheet number: DS35477 Rev. 9 - 2 Mar 3 YM Marking Information P4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 7 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D July 2012 © Diodes Incorporated DMP1022UFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<5s ID IDM TA = +25°C TC = +25°C Continuous Source-Drain Diode Current IS Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%) Units V V A -11.2 -9.0 -90 -2.5 -7.1 -50 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Value -12 ±8 -9.1 -7.2 ISM A A A A Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady state t<5s TA = +25°C TA = +70°C Steady state t<5s Steady state Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: PD RθJA PD RθJA RθJC TJ, TSTG Value 0.66 0.42 189 123 2.03 1.3 61 40 9.3 -55 to +150 Units W °C/W W °C/W °C 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 100 100 P(PK), PEAK TRANSIENT POIWER (W) -ID, DRAIN CURRENT (A) PW = 10µs RDS(on) Limited 10 DC PW = 10s PW = 1s 1 PW = 100ms PW = 10ms PW = 1ms PW = 100µs 0.1 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area DMP1022UFDE Datasheet number: DS35477 Rev. 9 - 2 100 2 of 7 www.diodes.com 90 80 Single Pulse RθJA = 61° C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation July 2012 © Diodes Incorporated DMP1022UFDE 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t)=r(t) * RθJA RθJA=61°C/W Duty Cycle, D=t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance 10 100 1,000 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th)Temperature Coefficient On-State Drain Current Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time BODY DIODE CHARACTERISTICS Diode Forward Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 — — — — — — -1 ±2 V µA µA VGS = 0V, ID = -250μA VDS = -12V, VGS = 0V VGS = ±5V, VDS = 0V VGS(th) ΔVGS(th)/ΔTJ ID(ON) -0.35 -10 — |Yfs| VSD — — -0.8 — — 16 21.5 26 32 95 -1.2 V mV/°C A RDS (ON) — 2.5 — 12 15 20 23 46 12 -0.8 VDS = VGS, ID = -250μA ID = -250μA VGS = -4.5V, VDS < -5A VGS = -4.5V, ID = -8.2A VGS = -2.5V, ID = -7.2A VGS = -1.8V, ID = -6.6A VGS = -1.5V, ID = -1A VGS = -1.2V, ID = -1A VDS = -4V, ID = -8.2A VGS = 0V, IS = -8A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — 2953 756 678 8.6 28.4 25.3 2.3 7.2 20 28 117 93 — — — 18 42.6 38 — — 30 42 176 139 VSD — — — — — — — — -0.8 — — — 28 10 18 13 -1.2 -2.5 -7.1 -50 56 — — 26 Continuous Source-Drain Diode Current (Note 6) IS Pulse Diode Forward Current (Note 8) Bodyy Diode Reverse Recovery Time (Note 8) Reverse Recovery Fall Time Reverse Recovery Rise Time Body Diode Reverse Recovery Charge (Note 8) ISM trr ta tb Qrr Notes: mΩ S V pF Test Condition VDS = -4V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz VGS = -5V, VDS = -4, ID = -10A nC VGS = -4.5V, VDS = -4V, ID = -10A ns V A ns VDS = -4V, VGS = -4.5V, RG = 1Ω, RL = 0.4Ω, ID = -9.8A VGS = 0V, IS = -9.8A TA = +25°C TC = +25°C — IS = -9.8A, dI/dt = 100A/μs nC 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing DMP1022UFDE Datasheet number: DS35477 Rev. 9 - 2 3 of 7 www.diodes.com July 2012 © Diodes Incorporated DMP1022UFDE 30 20 VGS = -8.0V VDS = -5.0V VGS = -4.5V 16 VGS = -2.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 VGS = -2.0V 20 VGS = -1.8V 15 VGS = -1.5V 10 12 8 TA = 150°C 4 5 TA = 125°C 0 0 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 4 Typical Output Characteristics 5 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 1.3 1.1 0.9 0.7 0.020 TA = 150°C DMP1022UFDE TA = 125°C 0.015 TA = 85° C TA = 25°C 0.010 TA = -55°C 0.005 0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 20 0.04 0.03 VGS = -2.5V ID = -5A 0.02 VGS = -4.5V ID = -10A 0.01 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature Datasheet number: DS35477 Rev. 9 - 2 3.0 0.025 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 1.5 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristics VGS= -4.5V 30 1.7 0.5 -50 0 0.030 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 1 TA = 25°C TA = -55°C VGS = -1.2V 0 TA = 85°C 4 of 7 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 9 On-Resistance Variation with Temperature July 2012 © Diodes Incorporated DMP1022UFDE 20 1.2 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 1.4 1.0 0.8 0.6 0.4 12 8 4 0.2 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 100,000 4,000 3,500 f = 1MHz -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) 16 3,000 TA = 150°C 10,000 Ciss 2,500 2,000 1,500 1,000 Coss T A = 125°C 1,000 TA = 85°C 500 Crss 0 0 3 6 9 12 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Junction Capacitance TA = 25°C 15 100 0 2 4 6 8 10 12 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 13 Typical Drain-Source Leakage Current vs. Voltage VGS, GATE-SOURCE VOLTAGE (V) 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics DMP1022UFDE Datasheet number: DS35477 Rev. 9 - 2 5 of 7 www.diodes.com July 2012 © Diodes Incorporated DMP1022UFDE Package Outline Dimensions A3 A1 A U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 − − b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e 0.65 − − L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 0.305 − − K2 0.225 − − Z 0.20 − − All Dimensions in mm D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) Suggested Pad Layout Dimensions Y3 Y2 X2 Y1 X1 X (6x) DMP1022UFDE Datasheet number: DS35477 Rev. 9 - 2 C C X X1 X2 Y Y1 Y2 Y3 Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) 6 of 7 www.diodes.com July 2012 © Diodes Incorporated DMP1022UFDE IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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