DMP1022UFDF

DMP1022UFDF
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS








ID max
TA = +25°C
RDS(ON) max
-12V
14.8mΩ @ VGS = -4.5V
-9.5A
19mΩ @ VGS = -2.5V
-8.5A
26mΩ @ VGS = -1.8V
-7.2A
32mΩ @ VGS = -1.5V
-6.6A
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This MOSFET is designed specifically for use in battery management
applications.





Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.0065 grams (Approximate)
D
U-DFN2020-6
G
ESD PROTECTED
Gate Protection
Diode
Top View
Pin Out
Bottom View
Bottom View
S
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP1022UFDF-7
DMP1022UFDF-13
Notes:
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PU
Date Code Key
Year
Code
Month
Code
2013
A
Jan
1
2014
B
Feb
2
DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
2015
C
Mar
3
YM
NEW PRODUCT
Features
2016
D
Apr
4
May
5
PU = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2017
E
Jun
6
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2018
F
Jul
7
2019
G
Aug
8
2020
H
Sep
9
2021
I
Oct
O
Nov
N
2022
J
Dec
D
October 2015
© Diodes Incorporated
DMP1022UFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
t<5s
ID
IDM
TA = +25°C
TC = +25°C
Continuous Source-Drain Diode Current
IS
Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%)
Units
V
V
A
-11.0
-8.8
-90
-2.5
-7.1
-50
ID
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
NEW PRODUCT
Value
-12
±8
-9.5
-7.6
ISM
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<5s
TA = +25°C
TA = +70°C
Steady state
t<5s
Steady state
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Value
0.73
0.47
172
128
2.1
1.3
59
45
5.1
-55 to +150
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +55°C (Note 8)
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IDSS
IGSS
-12
—
—
—
—
—
—
—
—
-200
-2
±10
V
nA
µA
µA
VGS = 0V, ID = -250μA
VDS = -12V, VGS = 0V
VDS = -12V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
-0.35
RDS(ON)
—
VSD
—
-0.8
14.8
19
26
32
-1.2
V
Static Drain-Source On-Resistance
—
12
15
20
23
-0.8
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4A
VGS = -2.5V, ID = -4A
VGS = -1.8V, ID = -4A
VGS = -1.5V, ID = -2A
VGS = 0V, IS = -8A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
2,712
514
467
8.6
48.3
28.6
4.2
7.0
25.1
39.8
141
147
—
—
—
18
—
—
—
—
—
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
V
pF
Test Condition
VDS = -10V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -8V, VDS = -6V, ID = -10A
nC
VGS = -4.5V, VDS = -6V,
ID = -10A
ns
VDS = -6V, VGS = -4.5V,
RG = 1Ω, ID = -8A
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
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© Diodes Incorporated
DMP1022UFDF
20
30
VDS = -5.0V
25
16
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -8.0V
VGS = -4.5V
VGS = -2.5V
20
VGS = -2.0V
12
VGS = -1.8V
VGS = -1.5V
15
TA = 85C
TA = 25C
TA = -55C
VGS = -1.2V
0
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0.06
0.05
VGS = -1.5V
0.04
0.03
VGS = -1.8V
0.02
VGS = -2.5V
VGS = -4.5V
0.01
0
0
5
10
15
20
25
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = -2.5V
ID = -5A
1.1
VGS = -4.5V
ID = -10A
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
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3
VGS = -4.5V
0.025
0.02
TA = 150C
T A = 125 C
0.015
TA = 85C
TA = 25C
0.01
TA = -55 C
0.005
0
0
RDS(on), DRAIN-SOURCE ON-RESISTANCE ()
1.5
0.5
1
1.5
2
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.03
30
1.7
1.3
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
TA = 125C
4
5
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
10
TA = 150C
8
4
8
12
16
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.04
0.03
0.02
0.01
VGS = -2.5V
ID = -5A
VGS = -4.5V
ID = -10A
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
October 2015
© Diodes Incorporated
DMP1022UFDF
V GS(TH), GATE THRESHOLD VOLTAGE (V)
20
1.2
-IS, SOURCE CURRENT (A)
16
1
12
0.8
-I D = 1mA
0.6
-ID = 250µA
0.4
TA= 25C
8
4
0.2
0
0.4
0
-50
-25
0
25
50
75
100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0.6
0.8
1
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
8
4000
f = 1MHz
3500
3000
-VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
Ciss
2500
2000
1500
1000
Coss
500
6
VDS = -6V
ID = -10A
4
2
Crss
0
0
0
3
6
9
12
-V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
0
15
5
10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
50
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1.4
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 172°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
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100
1000
October 2015
© Diodes Incorporated
DMP1022UFDF
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A1
A
A3
Seating Plane
D
NEW PRODUCT
e3
e4
k2
D2a
E
z2
D2
E2a
E2
k1
z1
e2
k
e
z(4x)
L
b
U-DFN2020-6
(Type F)
Dim
Min Max
Typ
A
0.57 0.63
0.60
A1
0.00 0.05
0.03
A3
0.15
b
0.25 0.35
0.30
D
1.95 2.05
2.00
D2
0.85 1.05
0.95
D2a 0.33 0.43
0.38
E
1.95 2.05
2.00
E2
1.05 1.25
1.15
E2a
0.65 0.75
0.70
e
0.65 BSC
e2
0.863 BSC
e3
0.70 BSC
e4
0.325 BSC
k
0.37 BSC
k1
0.15 BSC
k2
0.36 BSC
L
0.225 0.325 0.275
z
0.20 BSC
z1
0.110 BSC
z2
0.20 BSC
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X3
C
Y
X
Dimensions
Y3
Y2
Y1
Y4
X1
Pin1
C
X
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Value
(in mm)
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X2
DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
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© Diodes Incorporated
DMP1022UFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2015, Diodes Incorporated
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DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
6 of 6
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October 2015
© Diodes Incorporated