DMP1022UFDF 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS ID max TA = +25°C RDS(ON) max -12V 14.8mΩ @ VGS = -4.5V -9.5A 19mΩ @ VGS = -2.5V -8.5A 26mΩ @ VGS = -1.8V -7.2A 32mΩ @ VGS = -1.5V -6.6A 0.6mm profile – ideal for low profile applications PCB footprint of 4mm2 Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed specifically for use in battery management applications. Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) D U-DFN2020-6 G ESD PROTECTED Gate Protection Diode Top View Pin Out Bottom View Bottom View S Internal Schematic Ordering Information (Note 4) Part Number DMP1022UFDF-7 DMP1022UFDF-13 Notes: Case U-DFN2020-6 U-DFN2020-6 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information PU Date Code Key Year Code Month Code 2013 A Jan 1 2014 B Feb 2 DMP1022UFDF Datasheet number: DS36624 Rev. 5 - 2 2015 C Mar 3 YM NEW PRODUCT Features 2016 D Apr 4 May 5 PU = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 2019 G Aug 8 2020 H Sep 9 2021 I Oct O Nov N 2022 J Dec D October 2015 © Diodes Incorporated DMP1022UFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C t<5s ID IDM TA = +25°C TC = +25°C Continuous Source-Drain Diode Current IS Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%) Units V V A -11.0 -8.8 -90 -2.5 -7.1 -50 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) NEW PRODUCT Value -12 ±8 -9.5 -7.6 ISM A A A A Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady state t<5s TA = +25°C TA = +70°C Steady state t<5s Steady state Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Value 0.73 0.47 172 128 2.1 1.3 59 45 5.1 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Zero Gate Voltage Drain Current TJ = +55°C (Note 8) Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IDSS IGSS -12 — — — — — — — — -200 -2 ±10 V nA µA µA VGS = 0V, ID = -250μA VDS = -12V, VGS = 0V VDS = -12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.35 RDS(ON) — VSD — -0.8 14.8 19 26 32 -1.2 V Static Drain-Source On-Resistance — 12 15 20 23 -0.8 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4A VGS = -2.5V, ID = -4A VGS = -1.8V, ID = -4A VGS = -1.5V, ID = -2A VGS = 0V, IS = -8A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — 2,712 514 467 8.6 48.3 28.6 4.2 7.0 25.1 39.8 141 147 — — — 18 — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ V pF Test Condition VDS = -10V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz VGS = -8V, VDS = -6V, ID = -10A nC VGS = -4.5V, VDS = -6V, ID = -10A ns VDS = -6V, VGS = -4.5V, RG = 1Ω, ID = -8A 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP1022UFDF Datasheet number: DS36624 Rev. 5 - 2 2 of 6 www.diodes.com October 2015 © Diodes Incorporated DMP1022UFDF 20 30 VDS = -5.0V 25 16 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -8.0V VGS = -4.5V VGS = -2.5V 20 VGS = -2.0V 12 VGS = -1.8V VGS = -1.5V 15 TA = 85C TA = 25C TA = -55C VGS = -1.2V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 0.06 0.05 VGS = -1.5V 0.04 0.03 VGS = -1.8V 0.02 VGS = -2.5V VGS = -4.5V 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -2.5V ID = -5A 1.1 VGS = -4.5V ID = -10A 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP1022UFDF Datasheet number: DS36624 Rev. 5 - 2 3 of 6 www.diodes.com 3 VGS = -4.5V 0.025 0.02 TA = 150C T A = 125 C 0.015 TA = 85C TA = 25C 0.01 TA = -55 C 0.005 0 0 RDS(on), DRAIN-SOURCE ON-RESISTANCE () 1.5 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.03 30 1.7 1.3 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 TA = 125C 4 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 10 TA = 150C 8 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.04 0.03 0.02 0.01 VGS = -2.5V ID = -5A VGS = -4.5V ID = -10A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature October 2015 © Diodes Incorporated DMP1022UFDF V GS(TH), GATE THRESHOLD VOLTAGE (V) 20 1.2 -IS, SOURCE CURRENT (A) 16 1 12 0.8 -I D = 1mA 0.6 -ID = 250µA 0.4 TA= 25C 8 4 0.2 0 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 8 4000 f = 1MHz 3500 3000 -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) Ciss 2500 2000 1500 1000 Coss 500 6 VDS = -6V ID = -10A 4 2 Crss 0 0 0 3 6 9 12 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 0 15 5 10 15 20 25 30 35 40 45 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 50 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.4 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 172°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 DMP1022UFDF Datasheet number: DS36624 Rev. 5 - 2 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Figure 11 Transient Thermal Resistance 4 of 6 www.diodes.com 100 1000 October 2015 © Diodes Incorporated DMP1022UFDF Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A1 A A3 Seating Plane D NEW PRODUCT e3 e4 k2 D2a E z2 D2 E2a E2 k1 z1 e2 k e z(4x) L b U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X3 C Y X Dimensions Y3 Y2 Y1 Y4 X1 Pin1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 X2 DMP1022UFDF Datasheet number: DS36624 Rev. 5 - 2 5 of 6 www.diodes.com October 2015 © Diodes Incorporated DMP1022UFDF IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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