DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(on)max 20V 15.5mΩ @ VGS = 4.5V 16.5mΩ @ VGS = 4.0V 19mΩ @ VGS = 3.1V 20mΩ @ VGS = 2.5V 30mΩ @ VGS = 1.8V ID TA = +25°C 7.5A 7.3A 6.9A 6.7A 5.4A • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching • • performance, making it ideal for high efficiency power management applications. Applications • Power Management Functions • Battery Pack • Load Switch Case: U-DFN2030-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – NiPdAu over Copper leadframe. Solderable • per MIL-STD-202, Method 208 e4 Weight: 0.012 grams (approximate) Bottom Drain Contact G1 S1 S1 U-DFN2030-6 G2 D1/D2 G1 D2 D1 S2 S2 D1/D2 G2 G1 S1 ESD PROTECTED TO 2kV S1 Gate Protection Diode S1 Gate Protection Diode S2 Bottom View G2 S2 S2 Top View Pin Configuration Ordering Information (Note 4) Part Number DMN2016LHAB-7 Notes: Case U-DFN2030-6 Packaging 3,000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION NEW PRODUCT Product Summary 26W = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 12 for 2012) WW = Week code (01 to 53) 26W DMN2016LHAB Document number: DS36133 Rev. 5 - 2 1 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN2016LHAB Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t < 10s Value 20 ±12 7.5 5.8 ID A 7.7 6.0 45 ID Pulsed Drain Current (10μs pulse, duty cycle = 1% ) Unit V V IDM A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady State t < 10s TA = +25°C TA = +70°C Steady State t < 10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range Value 1.2 0.75 106 100 1.65 1 78 72 11.4 -55 to 150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.5 RDS(ON) — |Yfs| VSD — — 1.1 15.5 16.5 19 20 30 — 1.0 V Static Drain-Source On-Resistance 0.71 13 13.5 14 15 21 25 0.75 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 4.0A VGS = 4.0V, ID = 4.0A VGS = 3.1V, ID = 4.0A VGS = 2.5V, ID = 4.0A VGS = 1.8V, ID = 3.5A VDS = 5V, ID = 6A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — 1550 166 145 1.37 8.4 16 2.3 2.5 6.9 15.5 40.9 12 — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 2.5V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 6A VDD = 10V, RL = 1.7Ω, VGS = 5.0V, RG = 3Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad 7. Repetitive rating, pulse width limited by junction temperature 8. Guaranteed by design. Not subject to product testing DMN2016LHAB Document number: DS36133 Rev. 5 - 2 2 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN2016LHAB 30 18 20 VGS = 1.8V 15 VGS = 1.5V 10 0 0.5 1.0 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 10 8 6 TA = 150°C TA = 125°C 0.016 0.014 VGS = 2.5V 0.010 VGS = 4.5V 0.008 0.006 0.004 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V ID = 5A VGS = 3.6V ID = 3A 1.4 VGS = 2 .5V ID = 1A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN2016LHAB Document number: DS36133 Rev. 5 - 2 T A = -55°C 0 0.5 1.0 1.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2.0 VGS = 4.5V T A = 150°C 0.015 TA = 125°C T A = 85°C 0.010 TA = 25°C TA = -55°C 0.005 0 30 1.8 1.6 T A = 85°C TA = 25°C 0.020 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.018 0.012 0 2.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 12 2 VGS = 1.2V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 14 4 5 0 VDS = 5.0V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 ADVANCE INFORMATION NEW PRODUCT 20 VGS = 2.5V VGS = 3.0V VGS = 3.5V VGS = 4.0V VGS = 4.5V VGS = 10V 0 5 10 15 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.020 0.018 VGS = 2.5 V ID = 1A 0.016 VGS = 3.6V ID = 3A 0.014 0.012 VGS = 4.5V ID = 5A 0.010 0.008 0.006 0.004 -50 3 of 6 www.diodes.com -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature July 2014 © Diodes Incorporated DMN2016LHAB VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 10 Ciss 1,000 C oss 100 Crss f = 1MHz 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 7 Typical Junction Capacitance VDS = 10V ID = 6 A 8 6 4 2 0 20 100 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Figure 8 Gate Charge 40 100 RDS(on) Limited R DS(on) Limited 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 TJ(max) = 150°C PW = 100µs TA = 25°C VGS = 12V Single Pulse 0.01 DUT on 1 * MRP Board 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 SOA, Safe Operation Area 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT 1,000 100 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 T J(max) = 150°C PW = 100µs TA = 60°C VGS = 12V Single Pulse 0.01 DUT on 1 * MRP Board 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 SOA, Safe Operation Area 100 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 100°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMN2016LHAB Document number: DS36133 Rev. 5 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 11 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1,000 July 2014 © Diodes Incorporated DMN2016LHAB Package Outline Dimensions ADVANCE INFORMATION NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A1 A3 A U-DFN2030-6 Type B Dim Min Max Typ A 0.55 0.65 0.60 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 1.40 1.60 1.50 E 2.95 3.05 3.00 E2 1.74 1.94 1.84 e 0.65 L 0.28 0.38 0.33 Z 0.20 All Dimensions in mm Seating Plane D e (Pin #1 ID) E2 E L D2 b Z (4x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Y G Dimensions C G X X1 X2 Y Y1 Y2 X1 Y2 Y1 C DMN2016LHAB Document number: DS36133 Rev. 5 - 2 Value (in mm) 0.650 0.150 0.400 1.600 1.700 0.530 1.940 3.300 X 5 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN2016LHAB ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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