DMN2027USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) max 12.5mΩ @ VGS= 4.5V 19mΩ @ VGS= 2.5V 20V NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT Features and Benefits • • • • • ID max TA = +25°C 10.5 A 8.5 A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Backlighting • Power Management Functions • DC-DC Converters Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data • • • • • • Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.076 grams (Approximate) D S D S D S D G D SO-8 Pin1 Top View Pin Configuration Top View G S Equivalent Circuit Ordering Information (Note 4) Part Number DMN2027USS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SO-8 8 5 = Manufacturer’s Marking N2027US = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 15 = 2015) WW = Week (01 - 53) N2027US N3016LS YY WW 1 DMN2027USS Document number: DS35038 Rev. 4 - 2 4 1 of 7 www.diodes.com February 2015 © Diodes Incorporated DMN2027USS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s Continuous Drain Current (Note 6) VGS = 2.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 20 ±12 10.5 8.4 ID 13.4 10.7 A ID 8.5 6.8 A A 10.9 8.7 6.0 45.0 7.8 3.0 A A A mJ Value 1.5 82 48 2.0 60 37 6.4 -55 to 150 Units W °C/W °C/W W °C/W °C/W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Units V V IS IDM IAS EAS A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) RθJA Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) RθJA Thermal Resistance, Junction to Case Operating and Storage Temperature Range RθJC TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS(ON) VSD — — — 0.7 1.3 12.5 19 1.3 V Static Drain-Source On-Resistance 0.7 — — — VDS = VGS, ID = 250µA VGS = 4.5V, ID = 9.4A VGS = 2.5V, ID = 8.3A VGS = 0V, IS = 1.3A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Trr Qrr — — — — — — — — — — — — — — 1,000 166 158 1.51 7.0 11.6 2.7 3.4 11.67 12.49 35.89 12.33 10.8 5.8 — — — 3.2 — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 2.5V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 10V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 10V, ID = 9.4A ns VGS = 4.5V, VDS = 10V, RG = 6Ω , ID = 1A ns nC IF = 12A, di/dt = 500A/µs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN2027USS Document number: DS35038 Rev. 4 - 2 2 of 7 www.diodes.com February 2015 © Diodes Incorporated DMN2027USS Thermal Characteristics NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 1.6 Max Power Dissipation (W) ID Drain Current (A) RDS(on) Limited 10 1 DC 1s 100m 100ms 10m 10ms Single Pulse Tamb=25°C 1m 100m 1ms 100µs 1 10 VDS Drain-Source Voltage (V) 1.4 25mm x 25mm 1oz FR4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 25mm x 25mm 1oz FR4 60 T amb=25°C 50 D=0.5 40 30 Single Pulse D=0.2 20 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 10 100 1k 100 10 1 100µ 10m 100m 1 10 100 1k Pulse Power Dissipation 20 VGS = 10V VGS = 4.5V 25 VGS = 4.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1m Pulse Width (s) Transient Thermal Impedance VGS = 3.5V 20 VGS = 3.0V VGS = 2.5V 15 VGS = 2.0V 10 5 0 100 120 140 160 Single Pulse Tamb=25°C Pulse Width (s) 30 80 Derating Curve Maximum Power (W) Thermal Resistance (°C/W) 70 60 Temperature (°C) Safe Operating Area 80 40 15 10 5 TA = 150°C T A = 125°C VGS = 1.8V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN2027USS Document number: DS35038 Rev. 4 - 2 T A = 85°C TA = 25°C 2 3 of 7 www.diodes.com 0 TA = -55°C 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 February 2015 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.030 0.025 0.020 0.015 VGS = 2.5V 0.010 VGS = 4.5V 0.005 0 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.030 0.025 T A = 150°C 0.015 TA = 125°C T A = 85°C 0.010 T A = 25°C T A = -55°C 0.005 0 20 0 5 10 15 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.030 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V 0.020 1.6 1.4 1.2 1.0 VGS = 2.5V ID = 5A 0.8 VGS = 4.5V ID = 10A 0.6 -50 0.025 0.020 0.015 VGS = 4.5V ID = 10A 0.005 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 3.0 20 2.5 IS, SOURCE CURRENT (A) 16 2.0 1.5 1.0 0.5 ID = 1mA ID = 250µA 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN2027USS Document number: DS35038 Rev. 4 - 2 VGS = 2.5V ID = 5A 0.010 Fig. 5 On-Resistance Variation with Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT DMN2027USS 4 of 7 www.diodes.com 12 TA = 25°C 8 4 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 February 2015 © Diodes Incorporated DMN2027USS 10,000 10,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 1,000 Ciss Coss Crss 100 10 TA = 150°C 1,000 TA = 125°C 100 T A = 85°C 10 TA = 25°C 1 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 20 10 VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT f = 1MHz VDS = 15V ID = 9.4A 8 6 4 2 0 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN2027USS Document number: DS35038 Rev. 4 - 2 30 5 of 7 www.diodes.com February 2015 © Diodes Incorporated DMN2027USS Package Outline Dimensions 0.254 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E1 E A1 L SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 θ 0° 8° All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SO-8 X Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 C1 C2 Y DMN2027USS Document number: DS35038 Rev. 4 - 2 6 of 7 www.diodes.com February 2015 © Diodes Incorporated DMN2027USS IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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