DMN2027USS

DMN2027USS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON) max
12.5mΩ @ VGS= 4.5V
19mΩ @ VGS= 2.5V
20V
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
Features and Benefits
•
•
•
•
•
ID max
TA = +25°C
10.5 A
8.5 A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
•
Backlighting
•
Power Management Functions
•
DC-DC Converters
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
•
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.076 grams (Approximate)
D
S
D
S
D
S
D
G
D
SO-8
Pin1
Top View
Pin Configuration
Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2027USS-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
8
5
= Manufacturer’s Marking
N2027US = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 15 = 2015)
WW = Week (01 - 53)
N2027US
N3016LS
YY WW
1
DMN2027USS
Document number: DS35038 Rev. 4 - 2
4
1 of 7
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February 2015
© Diodes Incorporated
DMN2027USS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = 2.5V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
ID
Value
20
±12
10.5
8.4
ID
13.4
10.7
A
ID
8.5
6.8
A
A
10.9
8.7
6.0
45.0
7.8
3.0
A
A
A
mJ
Value
1.5
82
48
2.0
60
37
6.4
-55 to 150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
ID
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Units
V
V
IS
IDM
IAS
EAS
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
Total Power Dissipation (Note 6)
PD
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
RθJC
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1.0
±100
V
µA
nA
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
RDS(ON)
VSD
—
—
—
0.7
1.3
12.5
19
1.3
V
Static Drain-Source On-Resistance
0.7
—
—
—
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 9.4A
VGS = 2.5V, ID = 8.3A
VGS = 0V, IS = 1.3A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1,000
166
158
1.51
7.0
11.6
2.7
3.4
11.67
12.49
35.89
12.33
10.8
5.8
—
—
—
3.2
—
—
—
—
—
—
—
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 2.5V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
mΩ
V
Test Condition
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 10V, ID = 9.4A
ns
VGS = 4.5V, VDS = 10V,
RG = 6Ω , ID = 1A
ns
nC
IF = 12A, di/dt = 500A/µs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN2027USS
Document number: DS35038 Rev. 4 - 2
2 of 7
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February 2015
© Diodes Incorporated
DMN2027USS
Thermal Characteristics
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
1.6
Max Power Dissipation (W)
ID Drain Current (A)
RDS(on) Limited
10
1
DC
1s
100m
100ms
10m
10ms
Single Pulse
Tamb=25°C
1m
100m
1ms
100µs
1
10
VDS Drain-Source Voltage (V)
1.4
25mm x 25mm
1oz FR4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
25mm x 25mm
1oz FR4
60
T amb=25°C
50
D=0.5
40
30
Single Pulse
D=0.2
20
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
100
10
1
100µ
10m 100m
1
10
100
1k
Pulse Power Dissipation
20
VGS = 10V
VGS = 4.5V
25
VGS = 4.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1m
Pulse Width (s)
Transient Thermal Impedance
VGS = 3.5V
20
VGS = 3.0V
VGS = 2.5V
15
VGS = 2.0V
10
5
0
100 120 140 160
Single Pulse
Tamb=25°C
Pulse Width (s)
30
80
Derating Curve
Maximum Power (W)
Thermal Resistance (°C/W)
70
60
Temperature (°C)
Safe Operating Area
80
40
15
10
5
TA = 150°C
T A = 125°C
VGS = 1.8V
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMN2027USS
Document number: DS35038 Rev. 4 - 2
T A = 85°C
TA = 25°C
2
3 of 7
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0
TA = -55°C
0
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
February 2015
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.030
0.025
0.020
0.015
VGS = 2.5V
0.010
VGS = 4.5V
0.005
0
0
5
10
15
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.030
0.025
T A = 150°C
0.015
TA = 125°C
T A = 85°C
0.010
T A = 25°C
T A = -55°C
0.005
0
20
0
5
10
15
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
20
0.030
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
0.020
1.6
1.4
1.2
1.0
VGS = 2.5V
ID = 5A
0.8
VGS = 4.5V
ID = 10A
0.6
-50
0.025
0.020
0.015
VGS = 4.5V
ID = 10A
0.005
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
3.0
20
2.5
IS, SOURCE CURRENT (A)
16
2.0
1.5
1.0
0.5
ID = 1mA
ID = 250µA
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMN2027USS
Document number: DS35038 Rev. 4 - 2
VGS = 2.5V
ID = 5A
0.010
Fig. 5 On-Resistance Variation with Temperature
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
DMN2027USS
4 of 7
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12
TA = 25°C
8
4
0
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
February 2015
© Diodes Incorporated
DMN2027USS
10,000
10,000
IDSS, LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)
1,000
Ciss
Coss
Crss
100
10
TA = 150°C
1,000
TA = 125°C
100
T A = 85°C
10
TA = 25°C
1
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
20
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
20
10
VGS, GATE-SOURCE VOLTAGE (V)
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
f = 1MHz
VDS = 15V
ID = 9.4A
8
6
4
2
0
0
5
10
15
20
25
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMN2027USS
Document number: DS35038 Rev. 4 - 2
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© Diodes Incorporated
DMN2027USS
Package Outline Dimensions
0.254
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E1 E
A1
L
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
θ
0°
8°
All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SO-8
X
Dimensions Value (in mm)
X
0.60
Y
1.55
C1
5.4
C2
1.27
C1
C2
Y
DMN2027USS
Document number: DS35038 Rev. 4 - 2
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February 2015
© Diodes Incorporated
DMN2027USS
IMPORTANT NOTICE
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2015, Diodes Incorporated
www.diodes.com
DMN2027USS
Document number: DS35038 Rev. 4 - 2
7 of 7
www.diodes.com
February 2015
© Diodes Incorporated