DMN2011UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features RDS(ON) max ID max TA = +25°C • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 9.5mΩ @ VGS = 4.5V 11.7A 11mΩ @ VGS = 2.5V • Low Gate Threshold Voltage 10.8A • Low On-Resistance • ESD Protected Gate • • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, • Qualified to AEC-Q101 Standards for High Reliability making it ideal for high efficiency power management applications. Mechanical Data V(BR)DSS 20V Description • • Applications • • Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) • • General Purpose Interfacing Switch Power Management Functions • D U-DFN2020-6 G Pin1 ESD PROTECTED Gate Protection Diode Bottom View Pin Out Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMN2011UFDE-7 DMN2011UFDE-13 Notes: Marking N3 N3 Reel size (inches) 7 13 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YM ADVANCE INFORMATION ADVANCED INFORMATION Product Summary N3 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN2011UFDE Datasheet number: DS36376 Rev. 4 - 2 Mar 3 N3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 7 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D September 2014 © Diodes Incorporated DMN2011UFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic ADVANCE INFORMATION ADVANCED INFORMATION Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Steady State TA = +25°C TA = +70°C ID 11.7 9.3 A t<10s TA = +25°C TA = +70°C ID 14.2 11.4 A Steady State TA = +25°C TA = +70°C ID 10.8 8.7 A t<10s TA = +25°C TA = +70°C ID 13.2 10.6 A Continuous Drain Current (Note 6) VGS = 4.5V Continuous Drain Current (Note 6) VGS = 2.5V Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 80 A Maximum Body Diode Continuous Current IS 2.5 A Avalanche Current (Note 7) L = 0.1mH IAS 18 A Avalanche Energy (Note 7) L = 0.1mH EAS 17 mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range DMN2011UFDE Datasheet number: DS36376 Rev. 4 - 2 2 of 7 www.diodes.com PD RθJA PD Value 0.61 0.39 209 142 1.97 1.27 RθJA 64 43 RθJC 9.8 TJ, TSTG -55 to +150 Units W °C/W W °C/W °C September 2014 © Diodes Incorporated DMN2011UFDE Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1 µA VDS = 16V, VGS = 0V Zero Gate Voltage Drain Current TJ = +150°C (Note 9) IDSS — — 100 µA VDS = 16V, VGS = 0V Gate-Source Leakage IGSS — — ±10 µA VGS = ±10V, VDS = 0V VGS(th) 0.4 V VDS = VGS, ID = 250μA ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage — — 1.0 6.5 9.5 VGS = 4.5V, ID = 7A 7.5 11 VGS = 2.5V, ID = 7A 10 20 15 35 mΩ VGS = 1.8V, ID = 5A VGS = 1.5V, ID = 3A VSD — 0.7 1.2 V VGS = 0V, IS = 8.5A ID(ON) 20 — — A VDS ≦5V, VGS = 4.5V Input Capacitance Ciss — 2248 3372 pF Output Capacitance Coss — 295 443 pF Reverse Transfer Capacitance Crss — 265 398 pF Gate Resistance Rg — 1.5 3 Ω Total Gate Charge (VGS = 4.5V) Qg — 24 36 nC Total Gate Charge (VGS = 10V) Qg — 56 84 nC Gate-Source Charge Qgs — 3.5 6 nC On State Drain Current (Note 9) DYNAMIC CHARACTERISTICS (Note 9) Gate-Drain Charge Qgd — 5.1 8 nC Turn-On Delay Time tD(on) — 3.6 6 ns Turn-On Rise Time tr — 2.6 4 ns tD(off) — 21.6 33 ns Turn-Off Delay Time Turn-Off Fall Time tf — 13.5 21 ns Reverse Recovery Time Trr — 12.8 20 ns Reverse Recovery Charge Qrr — 6.9 11 nC Notes: VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 8.5A VDS = 10V, ID = 8.5A VGS = 4.5V, RG = 1.8Ω IF = 8.5A, di/dt = 210A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 30.0 30 VGS = 10V VDS = 5.0V VGS = 4.5V 25.0 VGS = 4.0V 25 ID, DRAIN CURRENT (A) VGS = 3.5V ID, DRAIN CURRENT (A) ADVANCE INFORMATION ADVANCED INFORMATION Characteristic OFF CHARACTERISTICS (Note 8) VGS = 3.0V 20.0 20 VGS = 1.5V VGS = 2.5V VGS = 2.0V TA = 150°C 15 15.0 10.0 TA = 125°C TA = 85°C 10 TA = 25°C 5 5.0 VGS = 1.2V TA = -55°C VGS = 1.0V 0.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic DMN2011UFDE Datasheet number: DS36376 Rev. 4 - 2 0 2 3 of 7 www.diodes.com 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 September 2014 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 1.5V VGS = 1.8V VGS = 2.5V VGS = 4.5V 0.03 0.025 ID = 8.5A 0.02 ID = 3.0A 0.015 0.01 0.005 0 0 8 10 4 6 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 12 2 0.016 VGS = 4.5V 0.014 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.012 TA = 150°C 0.01 TA = 125°C 0.008 TA = 85°C 0.006 TA = 25°C TA = -55°C 0.004 0.002 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature VGS = 2.5 V ID = 5A 1.2 VGS = 1.8V ID = 3A 0.8 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature 1 VGS(th), GATE THRESHOLD VOLTAGE (V) 0.018 0.016 VGS = 1.8V ID = 3A 0.014 0.012 0.01 VGS = 2.5V ID = 5A 0.008 0.006 0.004 0.002 0 1.6 0.4 -50 30 0.02 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION ADVANCED INFORMATION DMN2011UFDE -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature DMN2011UFDE Datasheet number: DS36376 Rev. 4 - 2 0.8 ID = 1mA 0.6 ID = 250µA 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 4 of 7 www.diodes.com September 2014 © Diodes Incorporated DMN2011UFDE 30 10000 CT, JUNCTION CAPACITANCE (pF) f = 1MHz IS, SOURCE CURRENT (A) 20 TA = 150°C TA = 125°C 15 TA = 85°C TA = 25°C 10 TA = -55°C 5 0 0 Ciss 1000 Coss Crss 100 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 1000 10 RDS(on) Limited 9 8 100 -ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) 7 6 VDS = 10V ID = 8.5A 5 4 3 10 DC 1 PW = 10s PW = 1s PW = 100ms P = 10ms W TJ(max) = 150°C PW = 1ms 0.1 TA = 25°C PW = 100µs VGS = 4.5V Single Pulse DUT on 1 * MRP Board 2 1 0 0 20 30 40 50 10 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCED INFORMATION 25 60 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 207°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.0001 DMN2011UFDE Datasheet number: DS36376 Rev. 4 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 September 2014 © Diodes Incorporated DMN2011UFDE Package Outline Dimensions ADVANCE INFORMATION ADVANCED INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A1 A A3 U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 — — 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e — — 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 — — 0.305 K2 — — 0.225 Z — — 0.20 All Dimensions in mm D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) Suggested Pad Layout Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Dimensions Y3 Y2 X2 C X X1 X2 Y Y1 Y2 Y3 Y1 X1 X (6x) DMN2011UFDE Datasheet number: DS36376 Rev. 4 - 2 C Y (2x) 6 of 7 www.diodes.com Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 September 2014 © Diodes Incorporated DMN2011UFDE ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com DMN2011UFDE Datasheet number: DS36376 Rev. 4 - 2 7 of 7 www.diodes.com September 2014 © Diodes Incorporated