DMP2039UFDE

DMP2039UFDE
Green
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features
RDS(ON) max
27mΩ @ VGS = -4.5V
-25V
40mΩ @ VGS = -1.8V
•
•
•
•
•
•
•
ID
TA = +25°C
Package
-6.7A
U-DFN2020-6
Type E
-5.4A
Low RDS(ON) – Ensures on State Losses are Minimized
0.6mm Profile – Ideal for Low Profile Applications
2
PCB Footprint of 4mm
ESD Protected Gate
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e3
Weight: 0.001 grams (approximate)
•
•
•
Applications
•
•
•
Mechanical Data
Load Switching
Battery Management Application
Power Management Functions
•
Drain
U-DFN2020-6
Type E
Pin1
Gate
Gate
Protection
Diode
Bottom View
Internal Schematic
Bottom View
ESD PROTECTED
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP2039UFDE-7
Notes:
Case
U-DFN2020-6 Type E
Packaging
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMP2039UFDE
Document number: DS35420 Rev. 5 - 2
Mar
3
P9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
YM
P9
2013
A
Apr
4
May
5
2014
B
Jun
6
1 of 6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
July 2012
© Diodes Incorporated
DMP2039UFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Steady
State
t<5s
Continuous Drain Current (Note 5) VGS = -1.8V
Steady
State
t<5s
ID
Value
-25
±8
-6.7
-5.3
ID
-8.3
-6.6
A
ID
-5.4
-4.3
A
A
-6.6
-5.2
-60
-2.0
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
Units
V
V
IDM
IS
A
A
A
Thermal Characteristics
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<5s
TA = +25°C
TA = +70°C
Steady state
t<5s
Steady state
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.8
1.2
160
104
2.0
2.9
63
42
10.8
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-25
⎯
⎯
⎯
⎯
⎯
⎯
-1
±10
V
µA
µA
VGS = 0V, ID = -250µA
VDS = -25V, VGS = 0V
VGS = ±8.0V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
⎯
20
24
28
33
16
-0.7
-1.0
27
34
40
70
⎯
-1.0
V
Static Drain-Source On-Resistance
-0.4
⎯
⎯
⎯
⎯
⎯
⎯
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -6.4A
VGS = -2.5V, ID = -4.8A
VGS = -1.8V, ID = -2.5A
VGS = -1.5V, ID = -1.5A
VDS = -5V, ID = -4A
VGS = 0V, IS = -1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2530
203
177
9.1
28.2
48.7
3.2
5.0
15.1
23.5
137.6
80.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = -15V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -15V, ID = -4.0A
VDD = -15V, VGS = -4.5V, RG = 1Ω,
ID = -4.0A
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing.
DMP2039UFDE
Document number: DS35420 Rev. 5 - 2
2 of 6
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July 2012
© Diodes Incorporated
DMP2039UFDE
20
20
VGS = 8.0V
VGS = 4.5V
VGS = 2.0V
12
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
16
VGS = 1.5V
VGS = 1.8V
8
4
0
10
5
TA = 150°C
0
TA = 125°C
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0
1
2
3
4
5
6
7
8
-ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
9
0
10
RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMP2039UFDE
Document number: DS35420 Rev. 5 - 2
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TA = 85°C
TA = 25°C
T A = -55°C
0
5
1.7
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Normalized)
15
VGS = 1.2V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω)
VDS = -5.0V
VGS = 2.5V
0.5
1.0
1.5
2.0
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3.0
0.04
VGS = -4.5V
TA = 150 °C
0.03
TA = 125°C
T A = 85°C
0.02
T A = 25°C
TA = -55°C
0.01
0
0
4
8
12
16
-ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.06
0.05
0.04
VGS = -2.5V
ID = -5A
0.03
VGS = -4.5V
ID = -10A
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
July 2012
© Diodes Incorporated
DMP2039UFDE
20
18
1.2
16
-IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE(V)
1.4
1.0
0.8
0.6
0.4
14
12
10
8
6
4
0.2
2
0
-50
0
0.4
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
100,000
-IDSS, LEAKAGE CURRENT (nA)
CT, JUNCTION CAPACITANCE (pF)
f = 1MHz
Ciss
Coss
Crss
10,000
TA = 150°C
1,000
TA = 125°C
100
TA = 85°C
10
T A = 25°C
0
5
10
15
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
1
20
5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
8
0
100
PW = 10µs
10
6
-ID, DRAIN CURRENT (A)
-VGS, GATE-SOURCE VOLTAGE (V)
RDS(on)
Limited
4
2
DC
1
PW = 10s
PW = 1s
0.1
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
0.01
0
0
5
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMP2039UFDE
Document number: DS35420 Rev. 5 - 2
0.001
0.1
4 of 6
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1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
July 2012
© Diodes Incorporated
DMP2039UFDE
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 64°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
A1
A
A3
D
b1
K1
D2
E E2
L1
L(2X)
K2
Z(4X)
e
b(6X)
U-DFN2020-6
Type E
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0
0.05
0.03
A3
—
—
0.15
b
0.25
0.35
0.30
b1
0.185 0.285 0.235
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
E
1.95
2.05
2.00
E2
1.40
1.60
1.50
e
—
—
0.65
L
0.25
0.35
0.30
L1
0.82
0.92
0.87
K1
—
—
0.305
K2
—
—
0.225
Z
—
—
0.20
All Dimensions in mm
Suggested Pad Layout
Dimensions
Y3 Y2
X2
C
X
X1
X2
Y
Y1
Y2
Y3
Y1
X1
X (6x)
DMP2039UFDE
Document number: DS35420 Rev. 5 - 2
C
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
Y (2x)
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July 2012
© Diodes Incorporated
DMP2039UFDE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMP2039UFDE
Document number: DS35420 Rev. 5 - 2
6 of 6
www.diodes.com
July 2012
© Diodes Incorporated