DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features RDS(ON) Package -6.2A 36mΩ @ VGS = -4.5V -20V 56mΩ @ VGS = -2.5V • • • • • • • ID TA = +25°C U-DFN2020-6 Type E -5.0A -4.2A 75mΩ @ VGS = -1.8V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • • • Mechanical Data • • Case: U-DFN2020-6 Type E Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Weight: 0.0065 grams (approximate) • • • General Purpose Interfacing Switch Power Management Functions Analog Switch U-DFN2020-6 Type E 6 D D 1 5 D D 2 Pin1 4 S Bottom View S G 3 Bottom View Internal Schematic Equivalent Circuit Ordering Information (Note 4) Part Number DMP2066UFDE-7 Notes: Case U-DFN2020-6 Type E Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP2066UFDE Document number: DS35496 Rev. 5 - 2 Mar 3 YM PC PC = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) Dot Denotes Pin 1 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D July 2012 © Diodes Incorporated DMP2066UFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<5s Continuous Drain Current (Note 5) VGS = -1.8V Steady State t<5s ID Value -20 ±12 -6.2 -4.9 ID -7.5 -5.9 A ID -4.2 -3.4 A A -5.2 -4.1 -25 2.5 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 5) Units V V IDM IS A A A Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 6) Steady state t<5s Thermal Resistance, Junction to Ambient (Note 6) RθJA Total Power Dissipation (Note 5) PD Steady state t<5s Thermal Resistance, Junction to Ambient (Note 5) RθJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RθJc TJ, TSTG Value 0.66 189 123 2.03 61 40 9.3 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 µA VGS(th) Static Drain-Source On-Resistance RDS (ON) |Yfs| VSD -0.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 25 33 50 9 -0.7 -1.1 36 56 75 ⎯ -1.2 Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1537 146 127 10.4 14.4 2.6 2.7 13.7 14.0 79.1 35.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V nA V mΩ S V pF pF pF Ω Test Condition VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = ±12.0V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4.6A VGS = -2.5V, ID = -3.8A VGS = -1.8V, ID = -2.0A VDS = -10V, ID = -4.5A VGS = 0V, IS = -2.1A VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -10V, VGS = -4.5V ID = -4.5A ns VDD = -10V, VGS = -4.5V, RG = 6Ω, RL = 10Ω, ID = -1A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP2066UFDE Document number: DS35496 Rev. 5 - 2 2 of 6 www.diodes.com July 2012 © Diodes Incorporated DMP2066UFDE 15 15 ID , DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) 20 10 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0 0 5 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 3 0.05 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) 0.08 VGS = 1.8V VGS = 2.5V 0.04 VGS= 4.5V 0.02 0 0 5 10 15 ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 5 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP2066UFDE Document number: DS35496 Rev. 5 - 2 3 of 6 www.diodes.com TA=150°C VGS = 10V TA=85°C TA=125°C 0.04 0.03 0.02 TA=25°C TA=-55°C 0.01 0 0 5 10 15 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.06 0.05 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature July 2012 © Diodes Incorporated DMP2066UFDE 20 1 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 1.2 0.8 ID= 1mA 0.6 ID= -250µA 0.4 16 12 TA= 25°C 8 4 0.2 0 -50 0 0.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10000 100000 f = 1MHz CT, JUNCTION CAPACITANCE (pF) IDSS, LEAKAGE CURRENT (nA) TA = 150°C 10000 1000 100 TA = 85° C 10 C ISS 1000 CRSS COSS TA = 25° C 100 1 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs. Voltage RDS(on) Limited 4 3 2 1 0 0 -4 -8 -12 -16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance -20 100 -ID, DRAIN CURRENT (A) VGS, GATE SOURCE VOLTAGE (V) 5 0 PW = 100µs 10 1 DC PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 T J(max) = 150°C TA = 25°C VGS = -12V Single Pulse 0.01 DUT on 1 * MRP Board 2 4 6 8 10 12 14 16 QG, TOTAL GATE CHARGE (nC) Fig. 11 Gate Charge Characteristics DMP2066UFDE Document number: DS35496 Rev. 5 - 2 18 4 of 6 www.diodes.com 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 July 2012 © Diodes Incorporated DMP2066UFDE r(t), TRANSIENT THERMAL RESISTANCE 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions A1 A A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) DMP2066UFDE Document number: DS35496 Rev. 5 - 2 e b(6X) 5 of 6 www.diodes.com U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 − − b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e 0.65 − − L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 0.305 − − K2 0.225 − − Z 0.20 − − All Dimensions in mm July 2012 © Diodes Incorporated DMP2066UFDE Suggested Pad Layout Dimensions Y3 Y2 X2 Y1 X1 X (6x) C C X X1 X2 Y Y1 Y2 Y3 Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com DMP2066UFDE Document number: DS35496 Rev. 5 - 2 6 of 6 www.diodes.com July 2012 © Diodes Incorporated