DMP2039UFDE4 25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) max TA = 25°C 26mΩ @ VGS = -4.5V -7.3 40mΩ @ VGS = -1.8V -6.0 -25V • Low RDS(ON) – ensures on state losses are minimized • • • • • • • 0.4mm profile – ideal for low profile applications 2 PCB footprint of 4mm Low Input Capacitance ESD Protected Gate Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • Load Switching Battery Management Application Power Management Functions • • • • Case: X2-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) Drain X2-DFN2020-6 Gate Gate Protection Diode Bottom View ESD PROTECTED Top View Source Equivalent Circuit Bottom View Internal Schematic Ordering Information (Note 3) Part Number DMP2039UFDE4-7 Notes: Case X2-DFN2020-6 Packaging 3,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. PD Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP2039UFDE4 Document number: DS35675 Rev. 3 - 2 Mar 3 YM Marking Information PD = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) Dot Denotes Pin 1 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D March 2012 © Diodes Incorporated DMP2039UFDE4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<5s Continuous Drain Current (Note 5) VGS = -1.8V Steady State t<5s ID -9.2 -7.3 A ID -6.0 -4.7 A Units V V A -7.6 -6.0 -60 -2.0 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Continuous Source-Drain Diode Current Thermal Characteristics ID Value -25 ±8 -7.3 -5.8 IDM IS A A A @TA = 25°C unless otherwise specified Characteristic Symbol TA = 25°C TA = 70°C Steady state t<5s TA = 25°C TA = 70°C Steady state t<5s Steady state Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range PD RθJA PD RθJA RθJC TJ, TSTG Value 0.69 0.44 182 113 2.4 1.5 52 33 9.1 -55 to +150 Units W °C/W W °C/W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -25 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±10 µA VGS(th) Static Drain-Source On-Resistance RDS (ON) |Yfs| VSD -0.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 19 24 29 35 14 -0.7 -1.0 26 33 40 70 ⎯ -1.0 Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2530 203 177 9.1 28.2 48.7 3.2 5.0 15.1 23.5 137.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V µA V mΩ mS V pF pF pF Ω Test Condition VGS = 0V, ID = -250μA VDS = -25V, VGS = 0V VGS = ±8.0V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -6.4A VGS = -2.5V, ID = -4.8A VGS = -1.8V, ID = -2.5A VGS = -1.5V, ID = -1.5A VDS = -5V, ID = -4A VGS = 0V, IS = -1A VDS = -15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -15V, ID = -4.0A nS VDD = -15V, VGS = -4.5V, RG = 1Ω, ID = -4.0A 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6. Short duration pulse test used to minimize self-heating effect 7. Guaranteed by design. Not subject to production testing. DMP2039UFDE4 Document number: DS35675 Rev. 3 - 2 2 of 6 www.diodes.com March 2012 © Diodes Incorporated DMP2039UFDE4 20 20 VGS = 8.0V VGS = 4.5V VGS = 2.0V 12 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 16 VGS = 1.5V VGS = 1.8V 8 4 0 10 5 TA = 150°C 0 TA = 125°C 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0.06 0.05 0.04 0.03 0.02 0.01 0 1 2 3 4 5 6 7 8 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 9 0 10 RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP2039UFDE4 Document number: DS35675 Rev. 3 - 2 3 of 6 www.diodes.com TA = 85°C TA = 25°C T A = -55°C 0 5 1.7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 15 VGS = 1.2V RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) VDS = -5.0V VGS = 2.5V 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3.0 0.04 VGS = -4.5V TA = 150 °C 0.03 TA = 125°C T A = 85°C 0.02 T A = 25°C TA = -55°C 0.01 0 0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.06 0.05 0.04 VGS = -2.5V ID = -5A 0.03 VGS = -4.5V ID = -10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature March 2012 © Diodes Incorporated DMP2039UFDE4 20 18 1.2 16 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 1.4 1.0 0.8 0.6 0.4 14 12 10 8 6 4 0.2 2 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 100,000 -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss Coss Crss 10,000 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 T A = 25°C 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 1 20 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 8 0 100 6 -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) PW = 10µs RDS(on) Limited 4 2 0 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms 0.1 TJ(max) = 150°C TA = 25°C VGS = -8V Single Pulse DUT on 1 * MRP Board 0 5 10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMP2039UFDE4 Document number: DS35675 Rev. 3 - 2 4 of 6 www.diodes.com 0.01 0.01 PW = 1ms PW = 100µs 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 March 2012 © Diodes Incorporated DMP2039UFDE4 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R θJA(t) = r(t) * R θJA R θJA = 178°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions A1 A3 A D e L D2 E E2 L1 Z(3X) DMP2039UFDE4 Document number: DS35675 Rev. 3 - 2 e X2-DFN2020-6 Dim Min Max Typ A 0.40 − − A1 0 0.05 0.03 A3 0.13 − − b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e 0.65 − − L 0.25 0.35 0.30 L1 1.35 1.45 1.40 Z 0.20 − − All Dimensions in mm b(6X) 5 of 6 www.diodes.com March 2012 © Diodes Incorporated DMP2039UFDE4 Suggested Pad Layout X2 X1 Y Dimensions Y3 Y2 Y1 X (6x) C X X1 X2 Y Y1 Y2 Y3 Value (in mm) 0.650 0.400 1.050 1.700 0.500 1.600 1.600 2.300 C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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